Diodes FMMT494 Sot23 npn silicon planar medium power transistor Datasheet

SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT494
ISSUE 3 - NOVEMBER 1995
PARTMARKING DETAIL –
TYPICAL CHARACTERISTICS
FMMT494
✪
494
E
C
0.4
0.4
IC/IB=10
+25 ° C
0.3
B
0.3
0.2
0.1
0.1
0
0
280
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
VCE=10V
240
ABSOLUTE MAXIMUM RATINGS.
0.2
IC/IB=10
IC/IB=50
1mA
-55 °C
+25 ° C
+100 ° C
10A
IC/IB=10
1.0
+100 ° C
+25 °C
0.6
-55 ° C
+25 ° C
+100 ° C
120
0.4
-55 ° C
80
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
0.8
200
160
PARAMETER
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
140
V
IC=100µA
VCEO(sus)
120
V
IC=10mA*
V(BR)EBO
5
0.2
V
IE=100µA
Collector Cut-Off Currents
ICBO
100
nA
VCB=120V
ICES
100
nA
VCE=120V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
0.3
V
V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
100
100
60
20
Transition Frequency
fT
100
Collector-Base
Breakdown Voltage
Cobo
40
0
0
1mA
10mA
100mA
1A
1mA
10A
10mA
100mA
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
1A
10A
10
VCE=10V
1.0
1
0.8
-55 ° C
0.6
+25 ° C
0.4
+100 ° C
0.1
DC
1s
100ms
10ms
1ms
100µs
0.01
0.2
0
0.001
1mA
10mA
100mA
1A
10A
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
IC-Collector Current
VBE(on) v IC
Safe Operating Area
MAX.
1000
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
300
10
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 122
3 - 121
SOT23 NPN SILICON PLANAR
MEDIUM POWER TRANSISTOR
FMMT494
ISSUE 3 - NOVEMBER 1995
PARTMARKING DETAIL –
TYPICAL CHARACTERISTICS
FMMT494
✪
494
E
C
0.4
0.4
IC/IB=10
+25 ° C
0.3
B
0.3
0.2
0.1
0.1
0
0
280
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
IC-Collector Current
IC-Collector Current
VCE(sat) v IC
VCE(sat) v IC
VCE=10V
240
ABSOLUTE MAXIMUM RATINGS.
0.2
IC/IB=10
IC/IB=50
1mA
-55 °C
+25 ° C
+100 ° C
10A
IC/IB=10
1.0
+100 ° C
+25 °C
0.6
-55 ° C
+25 ° C
+100 ° C
120
0.4
-55 ° C
80
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
140
V
Collector-Emitter Voltage
VCEO
120
V
Emitter-Base Voltage
VEBO
5
V
Continuous Collector Current
IC
1
A
Peak Pulse Current
ICM
2
A
Base Current
IB
200
mA
Power Dissipation at Tamb=25°C
Ptot
500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
0.8
200
160
PARAMETER
PARAMETER
SYMBOL
MIN.
UNIT
CONDITIONS.
Breakdown Voltages
V(BR)CBO
140
V
IC=100µA
VCEO(sus)
120
V
IC=10mA*
V(BR)EBO
5
0.2
V
IE=100µA
Collector Cut-Off Currents
ICBO
100
nA
VCB=120V
ICES
100
nA
VCE=120V
Emitter Cut-Off Current
IEBO
100
nA
VEB=4V
Collector-Emitter
Saturation Voltage
VCE(sat)
0.2
0.3
V
V
IC=250mA, IB=25mA*
IC=500mA, IB=50mA*
Base-Emitter
Saturation Voltage
VBE(sat)
1.1
V
IC=500mA, IB=50mA*
Base-Emitter
Turn On Voltage
VBE(on)
1.0
V
IC=500mA, VCE=10V*
Static Forward Current
Transfer Ratio
hFE
100
100
60
20
Transition Frequency
fT
100
Collector-Base
Breakdown Voltage
Cobo
40
0
0
1mA
10mA
100mA
1A
1mA
10A
10mA
100mA
IC-Collector Current
IC-Collector Current
hFE V IC
VBE(sat) v IC
1A
10A
10
VCE=10V
1.0
1
0.8
-55 ° C
0.6
+25 ° C
0.4
+100 ° C
0.1
DC
1s
100ms
10ms
1ms
100µs
0.01
0.2
0
0.001
1mA
10mA
100mA
1A
10A
0.1
1
10
100
VCE - Collector Emitter Voltage (V)
IC-Collector Current
VBE(on) v IC
Safe Operating Area
MAX.
1000
IC=1mA, VCE=10V*
IC=250mA, VCE=10V*
IC=500mA, VCE=10V*
IC=1A, VCE=10V*
300
10
MHz
IC=50mA, VCE=10V
f=100MHz
pF
VCB=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
3 - 122
3 - 121
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