Thinki FS10A 10.0 ampere surface mount round lead fast recovery rectifier diode Datasheet

FR10A thru FR10M
Pb Free Plating Product
Pb
FR10A thru FR10M
10.0 Ampere Surface Mount Round Lead Fast Recovery Rectifier Diodes
Features
OUTLINE
For surface mounted application
Low profile package
Built-in strain relief
Ideal for automated placement
Easy pick and place
Fast recovery time for high efficiency
Plastic material used carries Underwriters
Laboratory Classification 94V-0
Unit:inch(millimeter)
H
Cathode Band
J
A
E
C
D
B
F
G
DIMENSIONS
Mechanical Data
INCHES
MIN
0.200
0.177
0.002
--0.047
0 .168
0.309
0.239
0.234
DIM
A
B
C
D
E
F
G
H
J
Cases: HSMC(Round Lead)/SME Pkg
Terminals: Pure tin plated, lead free.
Polarity: Indicated by cathode band
Packing: Tape&Reel
Weight: 0.093 gram approximately
MAX
0.214
0.203
0.005
0.02
0.056
0 .179
0.322
0.243
0.240
MM
MIN
5.08
4.70
0.05
--1.20
4.27
7.85
6.08
5.95
MAX
5.43
5.30
0.13
0.51
1.42
4.55
8.18
6.18
6.10
NOTE
HSMC/SMC-W/SMCE
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Maximum Recurrent Peak Reverse
Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current See Fig. 1
Peak Forward Surge Current, 8.3 ms
Single Half Sine-wave Superimposed on
Rated Load (JEDEC method )
Maximum Instantaneous Forward Voltage
@ 8.0A
Maximum DC Reverse Current
o
@T A =25 C at Rated DC Blocking Voltage
o
@ T A =100 C
Maximum Reverse Recovery Time
( Note 1 )
Typical Junction Capacitance ( Note 2 )
Maximum Thermal Resistance (Note 3)
Operating Temperature Range
Storage Temperature Range
Notes:
Symbol
V RRM
FS10A FS10B FS10D FS10G FS10J FS10K FS10M
50
100
200
400
© 2006 Thinki Semiconductor Co., Ltd.
800
1000
V
V RMS
35
70
140
280
420
560
700
V
V DC
50
100
200
400
600
800
1000
V
I(AV)
10.0
A
I FSM
300
A
VF
1.3
V
IR
10
50
uA
uA
Trr
Cj
R θJA
R θJL
TJ
150
45
250
30
75
20
-55 to +150
-55 to +150
T STG
1. Reverse Recovery Test Conditions: IF =0.5A, IR =1.0A, IRR =0.25A
2. Measured at 1 MHz and Applied V R =4.0 Volts
3. Units Mounted on P.C.B. 0.4” x 0.4” (10mm x 10mm) Pad Areas
Rev.07C
600
Units
500
nS
pF
℃/W
℃
℃
Page 1/2
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FR10A thru FR10M
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
FIG.2- TYPICAL REVERSE CHARACTERISTICS
1000
10.0
INSTANTANEOUS REVERSE CURRENT. ( A)
AVERAGE FORWARD CURRENT. (A)
RESISTIVE OR
INDUCTIVE LOAD
0.4X0.4"(10X10mm)
COPPER PAD AREAS
8.0
4.0
0
55
150
o
LEAD TEMPERATURE. ( C)
FIG.3- MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
Tj=1250C
10
Tj=850C
1
Tj=25 0C
0.1
PEAK FORWARD SURGE CURRENT. (A)
300
8.3ms Single Half Sine Wave
o
(JEDEC Method) at TL=120 C
0.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)
150
60
FIG.5- TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
0
Tj=25 C
PULSE WIDTH-300 S
1% DUTY CYCLE
0
INSTANTANEOUS FORWARD CURRENT. (A)
100
10
1
NUMBER OF CYCLES AT 60Hz
FIG.4- TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE.(pF)
60
Tj=25 0C
f=1.0MHz
Vsig=50mVp-p
50
40
30
20
10
1
0.1
10
0
0
1
100
10
0.01
0.4
0.6
0.8
REVERSE VOLTAGE. (V)
1.0
1.2
1.4
1.6
1.8
FORWARD VOLTAGE. (V)
FIG.6- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50W
NONINDUCTIVE
10W
NONINDUCTIVE
trr
+0.5A
(-)
DUT
(+)
50Vdc
(approx)
(-)
PULSE
GENERATOR
(NOTE 2)
1W
NON
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
NOTES: 1. Rise Time=7ns max. Input Impedance=
1 megohm 22pf
2. Rise Time=10ns max. Sourse Impedance=
50 ohms
Rev.07C
© 2006 Thinki Semiconductor Co., Ltd.
0
-0.25A
(+)
-1.0A
1cm
SET TIME BASE FOR
5/ 10ns/ cm
Page 2/2
http://www.thinkisemi.com/
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