IRF IRF7389TR Generation v technology Datasheet

PD - 91645A
IRF7389
HEXFET® Power MOSFET
l
l
l
l
l
Generation V Technology
Ultra Low On-Resistance
Complimentary Half Bridge
Surface Mount
Fully Avalanche Rated
S1
N-CHANNEL MOSFET
1
8
D1
G1
2
7
D1
S2
3
6
D2
4
5
D2
G2
P-CHANNEL MOSFET
Description
N-Ch
P-Ch
30V
-30V
VDSS
RDS(on) 0.029Ω 0.058Ω
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications. With these improvements,
multiple devices can be used in an application with
dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering
techniques.
SO-8
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted)
Symbol
Drain-Source Voltage
Gate-Source Voltage
TA = 25°C
TA = 70°C
Continuous Drain Current
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
TA = 25°C
Maximum Power Dissipation
TA = 70°C
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt ‚
Junction and Storage Temperature Range
V DS
V GS
IDM
IS
EAS
IAR
EAR
dv/dt
TJ, TSTG
Maximum
P-Channel
N-Channel
30
Units
-30
± 20
7.3
5.9
30
2.5
-5.3
-4.2
-30
-2.5
2.5
1.6
82
4.0
A
W
140
-2.8
0.20
mJ
A
mJ
V/ ns
3.8
-2.2
-55 to + 150 °C
Symbol
Limit
Units
RθJA
50
°C/W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient
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02/25/04
IRF7389
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V (BR)DSS
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(ON)
Static Drain-to-Source On-Resistance
V GS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
I DSS
Drain-to-Source Leakage Current
I GSS
Gate-to-Source Forward Leakage
Qg
Total Gate Charge
Qgs
Gate-to-Source Charge
Qgd
Gate-to-Drain ("Miller") Charge
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Min.
30
-30
—
—
—
—
—
—
1.0
-1.0
—
—
—
—
—
—
––
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-P
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Typ. Max.
—
—
—
—
0.022 —
0.022 —
0.023 0.029
0.032 0.046
0.042 0.058
0.076 0.098
—
—
—
—
14
—
7.7 —
— 1.0
— -1.0
—
25
— -25
— ±100
22
33
23
34
2.6 3.9
3.8 5.7
6.4 9.6
5.9 8.9
8.1 12
13
19
8.9 13
13
20
26
39
34
51
17
26
32
48
650 —
710 —
320 —
380 —
130 —
180 —
Units
V
V/°C
Ω
V
S
µA
nA
nC
ns
pF
Conditions
VGS = 0V, ID = 250µA
VGS = 0V, ID = -250µA
Reference to 25°C, ID = 1mA
Reference to 25°C, ID = -1mA
VGS = 10V, ID = 5.8A „
VGS = 4.5V, ID = 4.7A „
VGS = -10V, ID = -4.9A „
VGS = -4.5V, ID = -3.6A „
VDS = VGS, I D = 250µA
VDS = VGS, I D = -250µA
VDS = 15V, I D = 5.8A „
VDS = -15V, I D = -4.9A
„
VDS = 24V, V GS = 0V
VDS = -24V, VGS = 0V
VDS = 24V, VGS = 0V, T J = 55°C
VDS = -24V, V GS = 0V, TJ = 55°C
VGS = ±20V
N-Channel
I D = 5.8A, VDS = 15V, VGS = 10V
P-Channel
I D = -4.9A, V DS = -15V, VGS = -10V
N-Channel
VDD = 15V, ID = 1.0A, RG = 6.0Ω,
RD = 15Ω
P-Channel
VDD = -15V, ID = -1.0A, RG = 6.0Ω,
RD = 15Ω
„
„
N-Channel
V GS = 0V, V DS = 25V, ƒ = 1.0MHz
P-Channel
V GS = 0V, V DS = -25V, ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current (Body Diode) 
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min. Typ. Max. Units
Conditions
—
— 2.5
—
— -2.5
A
—
—
30
—
— -30
— 0.78 1.0
TJ = 25°C, IS = 1.7A, VGS = 0V ƒ
V
— -0.78 -1.0
TJ = 25°C, IS = -1.7A, VGS = 0V ƒ
—
45
68
N-Channel
ns
—
44
66
TJ = 25°C, I F =1.7A, di/dt = 100A/µs
—
58
87
P-Channel
„
nC
TJ = 25°C, I F = -1.7A, di/dt = 100A/µs
—
42
63
Notes:
 Repetitive rating; pulse width limited by
„ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 22 )
Surface mounted on FR-4 board, t ≤ 10sec.
‚ N-Channel ISD ≤ 4.0A, di/dt ≤ 74A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
P-Channel I SD ≤ -2.8A, di/dt ≤ 150A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
ƒ N-Channel Starting TJ = 25°C, L = 10mH RG = 25Ω, IAS = 4.0A. (See Figure 12)
P-Channel Starting TJ = 25°C, L = 35mH RG = 25Ω, IAS = -2.8A.
2
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IRF7389
N-Channel
100
100
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
TOP
I D, Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
10
3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
10
0.1
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
Fig 2. Typical Output Characteristics
100
ISD , Reverse Drain Current (A)
100
I D , Drain-to-Source Current (A)
1
VDS, Drain-to-Source Voltage (V)
TJ = 25°C
TJ = 150°C
10
VDS = 10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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A
5.0
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
1.4
A
1.6
VSD , Source-to-Drain Voltage (V)
Fig 4. Typical Source-Drain Diode
Forward Voltage
3
IRF7389
RDS (on) , Drain-to-Source On Resistance (Ω)
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
N-Channel
ID = 5.8A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.040
V GS = 4.5V
0.036
0.032
0.028
0.024
V GS = 10V
0.020
80 100 120 140 160
A
0
10
TJ , Junction Temperature ( °C)
E AS , Single Pulse Avalanche Energy (mJ)
RDS (on) , Drain-to-Source On Resistance (Ω)
0.10
0.08
0.06
I D = 5.8A
0.04
0.02
0.00
6
9
12
V GS , Gate-to-Source Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate
Voltage
4
40
Fig 6. Typical On-Resistance Vs. Drain
Current
0.12
3
30
I D , Drain Current (A)
Fig 5. Normalized On-Resistance
Vs. Temperature
0
20
15
A
200
TOP
BOTTOM
160
IID
D
1.8A
3.2A
4.0A
120
80
40
A
0
25
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 8. Maximum Avalanche Energy
Vs. Drain Current
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IRF7389
N-Channel
20
V GS = 0V,
f = 1MHz
C iss = Cgs + C gd , Cds SHORTED
C rss = C gd
C oss = C ds + C gd
900
VGS , Gate-to-Source Voltage (V)
C, Capacitance (pF)
1200
Ciss
Coss
600
Crss
300
0
A
1
10
100
ID = 5.8A
VDS = 15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
VDS , Drain-to-Source Voltage (V)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7389
100
P-Channel
100
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
VGS
- 15V
- 10V
- 7.0V
- 5.5V
- 4.5V
- 4.0V
- 3.5V
BOTTOM - 3.0V
TOP
-I D , Drain-to-Source Current (A)
-I D , Drain-to-Source Current (A)
TOP
10
-3.0V
20µs PULSE WIDTH
TJ = 25°C
A
1
0.1
1
10
-3.0V
20µs PULSE WIDTH
TJ = 150°C
A
1
0.1
10
Fig 12. Typical Output Characteristics
100
-ISD , Reverse Drain Current (A)
-I D , Drain-to-Source Current (A)
10
Fig 13. Typical Output Characteristics
100
TJ = 25°C
TJ = 150°C
10
V DS = -10V
20µs PULSE WIDTH
1
3.0
3.5
4.0
4.5
5.0
5.5
6.0
-VGS , Gate-to-Source Voltage (V)
Fig 14. Typical Transfer Characteristics
6
1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
A
TJ = 150°C
10
TJ = 25°C
VGS = 0V
1
0.4
0.6
0.8
1.0
1.2
A
1.4
-VSD , Source-to-Drain Voltage (V)
Fig 15. Typical Source-Drain Diode
Forward Voltage
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IRF7389
RDS(on) , Drain-to-Source On Resistance
(Normalized)
2.0
RDS(on) , Drain-to-Source On Resistance ( Ω )
P-Channel
ID = 4.9A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
0.6
0.5
0.4
0.3
0.1
VGS = -10V
0.0
80 100 120 140 160
0
TJ , Junction Temperature ( ° C)
10
20
Fig 17. Typical On-Resistance Vs. Drain
Current
0.16
0.12
I D = -4.9A
0.04
0.00
0
3
6
9
12
15
-VGS , Gate -to-Source Voltage (V)
Fig 18. Typical On-Resistance Vs. Gate
Voltage
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A
EAS , Single Pulse Avalanche Energy (mJ)
300
0.08
30
-ID , Drain Current (A)
Fig 16. Normalized On-Resistance
Vs. Temperature
RDS(on) , Drain-to-Source On Resistance ( Ω )
V GS = -4.5V
0.2
ID
-1.3A
-2.2A
BOTTOM -2.8A
TOP
250
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 19. Maximum Avalanche Energy
Vs. Drain Current
7
A
IRF7389
VGS = 0V
Ciss = Cgs + Cgd + Cds
Crss = Cgd
1200
20
f = 1 MHz
SHORTED
-VGS , Gate-to-Source Voltage (V)
1400
P-Channel
C, Capacitance (pF)
Coss = Cds + Cgd
1000
Ciss
800
Coss
600
400
Crss
200
0
A
1
10
100
ID = -4.9A
VDS =-15V
16
12
8
4
0
0
10
20
30
40
QG , Total Gate Charge (nC)
- V DS , Drain-to-Source Voltage (V)
Fig 21. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 20. Typical Capacitance Vs.
Drain-to-Source Voltage
Thermal Response (Z thJA )
100
D = 0.50
10
0.20
0.10
0.05
1
PDM
0.02
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1 , Rectangular Pulse Duration (sec)
Fig 22. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
8
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IRF7389
Package Outline
SO8 Outline
DIM
D
-B-
5
8
7
6
5
1
2
3
0.25 (.010)
4
e
6X
M
A M
K x 45°
e1
θ
A
-C-
0.10 (.004)
0.25 (.010)
L
8X
A1
B 8X
6
C
8X
M C A S B S
MILLIMETERS
MAX
MIN
MAX
A
.0532
.0688
1.35
1.75
A1
.0040
.0098
0.10
0.25
B
.014
.018
0.36
0.46
C
.0075
.0098
0.19
0.25
D
.189
.196
4.80
4.98
E
.150
.157
3.81
3.99
5
H
E
-A-
INCHES
MIN
e
.050 BASIC
1.27 BASIC
e1
.025 BASIC
0.635 BASIC
H
.2284
.2440
K
.011
.019
0.28
5.80
0.48
6.20
L
0.16
.050
0.41
1.27
θ
0°
8°
0°
8°
RECOMMENDED FOOTPRINT
NOTES:
0.72 (.028 )
8X
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1982.
2. CONTROLLING DIMENSION : INCH.
3. DIMENSIONS ARE SHOWN IN MILLIMETERS (INCHES).
4. OUTLINE CONFORMS TO JEDEC OUTLINE MS-012AA.
6.46 ( .255 )
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS
1.78 (.070)
8X
MOLD PROTRUSIONS NOT TO EXCEED 0.25 (.006).
6 DIMENSIONS IS THE LENGTH OF LEAD FOR SOLDERING TO A SUBSTRATE..
1.27 ( .050 )
3X
Part Marking Information
SO8
EXAMPLE : THIS IS AN IRF7101
312
100
INTERNATIONAL
RECTIFIER
LOGO
XXXX
F7101
TOP
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DATE CODE (YWW)
Y = LAST DIGIT OF THE YEAR
WW = WEEK
PART NUMBER
WAFER
LOT CODE
(LAST 4 DIGITS)
BOTTOM
9
IRF7389
Tape & Reel Information
SO8
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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