Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Can be used in Class AB and Class C for all typical cellular base station modulations. • Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 63 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain — 18.5 dB Drain Efficiency — 29% Device Output Signal PAR — 5.9 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset — - 33 dBc in 3.84 MHz Channel Bandwidth • Capable of Handling 5:1 VSWR, @ 32 Vdc, 2140 MHz, 190 Watts CW Output Power • Typical Pout @ 1 dB Compression Point ] 190 Watts CW Features • 100% PAR Tested for Guaranteed Output Power Capability • Characterized with Series Equivalent Large - Signal Impedance Parameters • Internally Matched for Ease of Use • Integrated ESD Protection • Greater Negative Gate - Source Voltage Range for Improved Class C Operation • Designed for Digital Predistortion Error Correction Systems • RoHS Compliant • In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. 2110 - 2170 MHz, 63 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 1 NI - 780 MRF7S21210HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S21210HSR3 Table 1. Maximum Ratings Rating Symbol Value Unit Drain - Source Voltage VDSS - 0.5, +65 Vdc Gate - Source Voltage VGS - 6.0, +10 Vdc Operating Voltage VDD 32, +0 Vdc Storage Temperature Range Tstg - 65 to +150 °C Case Operating Temperature TC 150 °C TJ 225 °C CW 253 1.5 W W/°C Symbol Value (2,3) Unit Operating Junction Temperature (1,2) CW Operation @ TC = 25°C Derate above 25°C Table 2. Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Case Temperature 80°C, 190 W CW Case Temperature 72°C, 63 W CW RθJC 0.33 0.37 °C/W 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008-2009. All rights reserved. RF Device Data Freescale Semiconductor MRF7S21210HR3 MRF7S21210HSR3 1 Table 3. ESD Protection Characteristics Test Methodology Class Human Body Model (per JESD22 - A114) 1C (Minimum) Machine Model (per EIA/JESD22 - A115) A (Minimum) Charge Device Model (per JESD22 - C101) IV (Minimum) Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) IDSS — — 10 μAdc Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) IDSS — — 1 μAdc Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) IGSS — — 1 μAdc Gate Threshold Voltage (VDS = 10 Vdc, ID = 513 μAdc) VGS(th) 1.2 2 2.7 Vdc Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) VGS(Q) — 2.7 — Vdc Fixture Gate Quiescent Voltage (1) (VDD = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) VGG(Q) 4 5.4 7 Vdc Drain - Source On - Voltage (VGS = 10 Vdc, ID = 5.13 Adc) VDS(on) 0.1 0.2 0.3 Vdc Reverse Transfer Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss — 2.02 — pF Output Capacitance (VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Coss — 257 — pF Input Capacitance (VDS = 28 Vdc, VGS = 0 Vdc ± 30 mV(rms)ac @ 1 MHz) Ciss — 516 — pF Off Characteristics On Characteristics Dynamic Characteristics (2) Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg., f = 2112.5 MHz and f = 2167.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Gps 17 18.5 20.5 dB Drain Efficiency ηD 26 29 — % PAR 5.5 5.9 — dB ACPR — - 33 - 31 dBc IRL — - 15 -8 dB Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output. (continued) MRF7S21210HR3 MRF7S21210HSR3 2 RF Device Data Freescale Semiconductor Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted) (continued) Characteristic Symbol Min Typ Max Unit Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 2110 - 2170 MHz Bandwidth IMD Symmetry @ 130 W PEP, Pout where IMD Third Order Intermodulation ^ 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) IMDsym — 15 — MHz VBWres — 60 — MHz Gain Flatness in 60 MHz Bandwidth @ Pout = 63 W Avg. GF — 1.2 — dB Average Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 190 W CW Φ — 1.1 — ° Delay — 2.5 — ns Part - to - Part Insertion Phase Variation @ Pout = 190 W CW, f = 2140 MHz, Six Sigma Window ΔΦ — 26 — ° Gain Variation over Temperature ( - 30°C to +85°C) ΔG — 0.019 — dB/°C ΔP1dB — 0.011 — dBm/°C VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Average Group Delay @ Pout = 190 W CW, f = 2140 MHz Output Power Variation over Temperature ( - 30°C to +85°C) MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 3 Z19 R1 VBIAS VSUPPLY + R2 C1 C2 Z17 C3 C10 R3 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z10 Z11 Z12 Z13 DUT C6 C12 C19 Z9 Z8 C5 C11 C13 RF C15 Z16 OUTPUT Z14 Z15 C14 Z18 Z20 + C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 C8 C7 0.402″ x 0.066″ Microstrip 0.840″ x 0.076″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.029″ x 0.076″ Microstrip 0.194″ x 0.076″ Microstrip 0.051″ x 0.533″ Microstrip 0.114″ x 0.533″ Microstrip 0.139″ x 1.268″ Microstrip 0.304″ x 1.201″ Microstrip C16 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19, Z20 PCB C17 C18 C20 0.044″ x 0.613″ Microstrip 0.398″ x 0.102″ Microstrip 0.071″ x 0.220″ Microstrip 0.071″ x 0.220″ Microstrip 0.439″ x 0.066″ Microstrip 0.764″ x 0.066″ Microstrip 0.353″ x 0.090″ Microstrip 0.797″ x 0.090″ Microstrip 0.660″ x 0.120″ Microstrip Taconic RF35, 0.030”, εr = 3.5 Figure 1. Test Circuit Schematic — MRF7S21210HR3 Table 5. Test Circuit Component Designations and Values — MRF7S21210HR3 Part Description Part Number Manufacturer C1, C9, C11, C12, C17, C18 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK C2, C8 100 nF Chip Capacitors 12065C104KAT AVX C3, C7, C10, C13, C14, C16 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C5 5.6 pF Chip Capacitor ATC100B5R6BT500XT ATC C6 0.8 pF Chip Capacitor ATC100B0R8BT500XT ATC C15 0.6 pF Chip Capacitor ATC100B0R6BT500XT ATC C19, C20 470 μF Electrolytic Capacitors 2222 12018471 BC Components R1, R2 10 KΩ, 1/4 W Chip Resistors WCR120610KL Welwyn R3 10 Ω, 1/4 W Chip Resistor 232272461009 Phycomp C4 not used in MRF7S21210HR3 part. MRF7S21210HR3 MRF7S21210HSR3 4 RF Device Data Freescale Semiconductor C10 R1 R3 R2 C1 C11 C12 C19 C3 C13 CUT OUT AREA C2 C5 C6 C15 C14 C20 C8 C9 C7 C17 C18 C16 MRF7S21210H Rev. 0 C4 not used in MRF7S21210HR3 part. Figure 2. Test Circuit Component Layout — MRF7S21210HR3 MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 5 Z20 R1 VBIAS VSUPPLY + R2 C1 C2 Z18 C3 C10 R3 RF INPUT Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z11 Z12 Z13 Z14 DUT C4 C6 C12 C19 Z10 Z9 C5 C11 C13 RF C15 Z17 OUTPUT Z15 Z16 C14 Z19 Z21 + C9 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 C8 C7 0.402″ x 0.066″ Microstrip 0.840″ x 0.076″ Microstrip 0.029″ x 0.076″ Microstrip 0.059″ x 0.118″ Microstrip 0.059″ x 0.118″ Microstrip 0.029″ x 0.076″ Microstrip 0.194″ x 0.076″ Microstrip 0.510″ x 0.533″ Microstrip 0.114″ x 0.533″ Microstrip 0.139″ x 1.268″ Microstrip 0.304″ x 1.201″ Microstrip C16 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20, Z21 PCB C17 C18 C20 0.044″ x 0.613″ Microstrip 0.398″ x 0.102″ Microstrip 0.071″ x 0.220″ Microstrip 0.071″ x 0.220″ Microstrip 0.439″ x 0.066″ Microstrip 0.764″ x 0.066″ Microstrip 0.353″ x 0.090″ Microstrip 0.797″ x 0.090″ Microstrip 0.660″ x 0.120″ Microstrip Taconic RF35, 0.030”, εr = 3.5 Figure 3. Test Circuit Schematic — MRF7S21210HSR3 Table 6. Test Circuit Component Designations and Values — MRF7S21210HSR3 Part Description Part Number Manufacturer C1, C9, C11, C12, C17, C18 10 μF, 50 V Chip Capacitors C5750X5R1H106MT TDK C2, C8 100 nF Chip Capacitors 12065C104KAT AVX C3, C7, C10, C13, C14, C16 6.8 pF Chip Capacitors ATC100B6R8BT500XT ATC C4 0.3 pF Chip Capacitor ATC100B0R3BT500XT ATC C5 5.6 pF Chip Capacitor ATC100B5R6BT500XT ATC C6 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC C15 0.4 pF Chip Capacitor ATC100B0R4BT500XT ATC C19, C20 470 μF Electrolytic Capacitors 2222 12018471 BC Components R1, R2 10 KΩ, 1/4 W Chip Resistors WCR120610KL Welwyn R3 10 Ω, 1/4 W Chip Resistor 232272461009 Phycomp MRF7S21210HR3 MRF7S21210HSR3 6 RF Device Data Freescale Semiconductor C10 R1 R3 R2 C1 C11 C12 C19 C3 C5 C4 C13 CUT OUT AREA C2 C6 C15 C14 C20 C8 C9 C7 C17 C18 C16 MRF7S21210HS Rev. 0 Figure 4. Test Circuit Component Layout — MRF7S21210HSR3 MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 7 TYPICAL CHARACTERISTICS 30 Gps 17 28 VDD = 28 Vdc, Pout = 63 W (Avg.) IDQ = 1400 mA, Single−Carrier W−CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 16 15 29 ACPR 27 14 13 −29 0 −31 −4 −33 IRL 12 −35 11 PARC 10 2060 2080 −37 2100 2120 2140 2160 2180 2200 −8 −12 −16 −39 2220 −20 −1 −1.2 −1.4 −1.6 PARC (dB) Gps, POWER GAIN (dB) 18 IRL, INPUT RETURN LOSS (dB) 19 ηD, DRAIN EFFICIENCY (%) 31 ηD ACPR (dBc) 20 −1.8 −2 f, FREQUENCY (MHz) Note: Measurement conducted with device soldered on Freescale test fixture. Figure 5. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 63 Watts Avg. IMD, INTERMODULATION DISTORTION (dBc) 19 IDQ = 2100 mA 1750 mA 1400 mA 16 1050 mA 15 VDD = 28 Vdc, f = 2140 MHz CW Measurements 700 mA 14 1 100 10 −20 −30 IM3−L IM3−U IM5−U −40 IM5−L −50 IM7−L −60 IM7−U −70 1 300 10 100 Pout, OUTPUT POWER (WATTS) CW TWO−TONE SPACING (MHz) Figure 6. CW Power Gain versus Output Power Figure 7. Intermodulation Distortion Products versus Tone Spacing 19 1 Gps, POWER GAIN (dB) 18.5 18 17.5 17 16.5 16 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) −1 dB = 48.327 W ACPR 0 45 −25 40 −30 ηD −1 −2 35 30 −2 dB = 67.216 W −3 dB = 89.144 W Gps −3 −4 −5 30 25 PARC VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 50 70 90 110 −35 −40 ACPR (dBc) 17 VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1400 mA Two−Tone Measurements (f1 + f2)/2 = Center Frequency of 2140 MHz ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) 18 −10 −45 20 −50 15 −55 130 Pout, OUTPUT POWER (WATTS) Figure 8. Output Peak - to - Average Ratio Compression (PARC) versus Output Power MRF7S21210HR3 MRF7S21210HSR3 8 RF Device Data Freescale Semiconductor TYPICAL CHARACTERISTICS 22 25_C Gps 18 60 0 50 −10 85_C 40 85_C 16 14 TC = −30_C 30 25_C −30_C 20 ACPR 12 10 ηD Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 10 1 10 100 0 300 −20 −30 −40 ACPR (dBc) −30_C ηD, DRAIN EFFICIENCY (%) Gps, POWER GAIN (dB) VDD = 28 Vdc, IDQ = 1400 mA, f = 2140 MHz Single−Carrier W−CDMA, 3.84 MHz 20 Channel Bandwidth −50 −60 Pout, OUTPUT POWER (WATTS) AVG. Figure 9. Single - Carrier W - CDMA Power Gain, Drain Efficiency and ACPR versus Output Power 0 20 −4 12 −8 8 −12 S11 4 0 1750 −16 VDD = 28 Vdc IDQ = 1400 mA 1850 1950 2050 2150 2250 S11 (dB) S21 (dB) S21 16 2350 2450 −20 2550 f, FREQUENCY (MHz) Figure 10. Broadband Frequency Response MTTF (HOURS) 108 107 106 105 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (°C) This above graph displays calculated MTTF in hours when the device is operated at VDD = 28 Vdc, Pout = 63 W Avg., and ηD = 29%. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 11. MTTF versus Junction Temperature MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 9 W - CDMA TEST SIGNAL 100 −10 3.84 MHz Channel BW −20 10 1 −40 Input Signal −50 0.1 (dB) PROBABILITY (%) −30 0.01 −70 W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0.001 0.0001 0 2 4 6 −60 −80 −ACPR in 3.84 MHz Integrated BW −90 8 10 −ACPR in 3.84 MHz Integrated BW −100 PEAK−TO−AVERAGE (dB) Figure 12. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal −110 −9 −7.2 −5.4 −3.6 −1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) Figure 13. Single - Carrier W - CDMA Spectrum MRF7S21210HR3 MRF7S21210HSR3 10 RF Device Data Freescale Semiconductor Zo = 5 Ω f = 2220 MHz f = 2220 MHz f = 2060 MHz Zsource Zload f = 2060 MHz VDD = 28 Vdc, IDQ = 1400 mA, Pout = 63 W Avg. f MHz Zsource W Zload W 2060 4.34 - j1.26 1.52 - j1.46 2080 4.34 - j1.20 1.47 - j1.35 2100 4.34 - j1.14 1.42 - j1.23 2120 4.33 - j1.09 1.37 - j1.11 2140 4.34 - j1.05 1.32 - j0.99 2160 4.33 - j0.96 1.27 - j0.87 2180 4.33 - j0.92 1.23 - j0.75 2200 4.33 - j0.92 1.19 - j0.64 2220 4.32 - j0.87 1.15 - j0.52 Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network Device Under Test Input Matching Network Z source Z load Figure 14. Series Equivalent Source and Load Impedance MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 11 ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS 60 Pout, OUTPUT POWER (dBm) 59 Ideal P3dB = 55.47 dBm (352 W) 58 57 P1dB = 54.61 dBm (289 W) 56 55 Actual 54 53 52 VDD = 28 Vdc, IDQ = 1400 mA, Pulsed CW 10 μsec(on), 10% Duty Cycle, f = 2140 MHz 51 50 31 32 33 34 35 36 37 38 39 40 41 Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V Test Impedances per Compression Level P1dB Zsource Ω Zload Ω 5.21 - j0.31 1.23 - j1.06 Figure 15. Pulsed CW Output Power versus Input Power @ 28 V MRF7S21210HR3 MRF7S21210HSR3 12 RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS B G Q bbb 2X 1 M T A M B M NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 3 B K 2 (FLANGE) D bbb M T A B M M M R (INSULATOR) bbb N M T A B M M M ccc M T A M aaa M T A M S (LID) ccc H M T A B M DIM A B C D E F G H K M N Q R S aaa bbb ccc (LID) B M (INSULATOR) B M C F E A T A SEATING PLANE (FLANGE) CASE 465 - 06 ISSUE G NI - 780 MRF7S21210HR3 INCHES MIN MAX 1.335 1.345 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 .118 .138 0.365 0.375 0.365 0.375 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.32 5.33 19.66 19.96 19.60 20.00 3.00 3.51 9.27 9.53 9.27 9.52 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE 4X U (FLANGE) NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M−1994. 2. CONTROLLING DIMENSION: INCH. 3. DELETED 4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4X Z (LID) B 1 2X 2 B (FLANGE) K D bbb M T A B M N M ccc M R (LID) M T A M B M ccc M T A M M B M aaa M T A M S (INSULATOR) bbb M T A (LID) B M (INSULATOR) B M H C 3 E A A (FLANGE) F T SEATING PLANE CASE 465A - 06 ISSUE H NI - 780S MRF7S21210HSR3 DIM A B C D E F H K M N R S U Z aaa bbb ccc INCHES MIN MAX 0.805 0.815 0.380 0.390 0.125 0.170 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.774 0.786 0.772 0.788 0.365 0.375 0.365 0.375 −−− 0.040 −−− 0.030 0.005 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 20.45 20.70 9.65 9.91 3.18 4.32 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 19.61 20.02 19.61 20.02 9.27 9.53 9.27 9.52 −−− 1.02 −−− 0.76 0.127 REF 0.254 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF7S21210HR3 MRF7S21210HSR3 RF Device Data Freescale Semiconductor 13 PRODUCT DOCUMENTATION Refer to the following documents to aid your design process. Application Notes • AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices REVISION HISTORY The following table summarizes revisions to this document. Revision Date Description 0 July 2008 • Initial Release of Data Sheet 1 Jan. 2009 • Added MRF7S21210HR3 part to data sheet, p. 1 • Added Fig. 1, Test Circuit Schematic and Microstrip list for MRF7S21210HR3, p. 4 • Added Fig. 2, Test Circuit Component Part Layout for MRF7S21210HR3, p. 5 • Table 6, Test Circuit Component Designations and Values - MRF7S21210HSR3, changed Part Number and Manufacturer for R1, R2 from CRCW12061002FKEA, Vishay to WCR120610KL, Welwyn and for R3 from CRCW12061000FKEA, Vishay to 232272461009, Phycomp, p. 6 • Added Fig. 11, MTTF versus Junction Temperature, p. 9 • Added 465 - 06 (NI - 780) package isometric, p. 1, and Mechanical Outline, p. 12 MRF7S21210HR3 MRF7S21210HSR3 14 RF Device Data Freescale Semiconductor How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. 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Freescalet and the Freescale logo are trademarks of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. © Freescale Semiconductor, Inc. 2008-2009. All rights reserved. MRF7S21210HR3 MRF7S21210HSR3 Document Number: RF Device Data MRF7S21210H Rev. 1, 1/2009 Freescale Semiconductor 15