IRF8721PbF-1 HEXFET® Power MOSFET VDS 30 RDS(on) max (@VGS = 10V) Qg (typical) ID V 8.5 mΩ 8.3 nC 14 (@TA = 25°C) A A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Top View Applications l Control MOSFET of Sync-Buck Converters used for Notebook Processor Power l Control MOSFET for Isolated DC-DC Converters in Networking Systems Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques RoHS Compliant, Halogen-Free MSL1, Industrial qualification Base Part Number Package Type IRF8721PbF-1 SO-8 ⇒ Benefits Multi-Vendor Compatibility Easier Manufacturing Environmentally Friendlier Increased Reliability Standard Pack Form Quantity Tube/Bulk 95 Tape and Reel 4000 Orderable Part Number IRF8721PbF-1 IRF8721TRPbF-1 Absolute Maximum Ratings Max. Units VDS Drain-to-Source Voltage Parameter 30 V VGS Gate-to-Source Voltage ± 20 I D @ TA = 25°C Continuous Drain Current, VGS @ 10V I D @ TA = 70°C Continuous Drain Current, VGS @ 10V 11 I DM Pulsed Drain Current 110 14 c PD @TA = 25°C Power Dissipation 2.5 PD @TA = 70°C Power Dissipation 1.6 TJ Linear Derating Factor Operating Junction and TSTG Storage Temperature Range A W W/°C °C 0.02 -55 to + 150 Thermal Resistance Parameter g Junction-to-Ambient fg Junction-to-Drain Lead RθJL RθJA Notes through 1 Typ. Max. Units ––– 20 °C/W ––– 50 are on page 9 www.irf.com © 2013 International Rectifier October 02, 2013 IRF8721PbF-1 Static @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units V Conditions BVDSS Drain-to-Source Breakdown Voltage 30 ––– ––– ΔΒVDSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.021 ––– V/°C Reference to 25°C, ID = 1mA VGS = 0V, ID = 250μA RDS(on) Static Drain-to-Source On-Resistance ––– 6.9 8.5 mΩ ––– 10.6 12.5 VGS = 10V, ID = 14A e e VGS = 4.5V, ID = 11A VGS(th) Gate Threshold Voltage 1.35 ––– 2.35 V ΔVGS(th) Gate Threshold Voltage Coefficient ––– -6.2 ––– mV/°C IDSS Drain-to-Source Leakage Current ––– ––– 1.0 μA VDS = 24V, VGS = 0V ––– ––– 150 IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V Gate-to-Source Reverse Leakage ––– ––– -100 gfs Forward Transconductance 27 ––– ––– Qg Total Gate Charge ––– 8.3 12 Qgs1 Pre-Vth Gate-to-Source Charge ––– 2.0 ––– Qgs2 Post-Vth Gate-to-Source Charge ––– 1.0 ––– Qgd Gate-to-Drain Charge ––– 3.2 ––– ID = 11A Qgodr See Fig. 16a and 16b VDS = VGS, ID = 25μA VDS = 24V, VGS = 0V, TJ = 125°C VGS = -20V S VDS = 15V, ID = 11A VDS = 15V nC Gate Charge Overdrive ––– 2.0 ––– Qsw Switch Charge (Qgs2 + Qgd) ––– 4.2 ––– Qoss RG Output Charge ––– 5.0 ––– nC Gate Resistance ––– 1.8 Ω td(on) Turn-On Delay Time ––– 8.2 3.0 ––– tr Rise Time ––– 11 ––– td(off) Turn-Off Delay Time ––– 8.1 ––– tf Fall Time ––– 7.0 ––– Ciss Input Capacitance ––– 1040 ––– Coss Output Capacitance ––– 229 ––– Crss Reverse Transfer Capacitance ––– 114 ––– VGS = 4.5V VDS = 16V, VGS = 0V VDD = 15V, VGS = 4.5V ID = 11A ns RG = 1.8Ω See Fig. 15a VGS = 0V pF VDS = 15V ƒ = 1.0MHz Avalanche Characteristics EAS Parameter Single Pulse Avalanche Energy IAR Avalanche Current c d Typ. Max. Units ––– 68 mJ ––– 11 A Diode Characteristics Parameter Min. Typ. Max. Units Conditions IS Continuous Source Current ––– ––– 3.1 ISM (Body Diode) Pulsed Source Current ––– ––– 112 showing the integral reverse VSD (Body Diode) Diode Forward Voltage ––– ––– 1.0 V S p-n junction diode. TJ = 25°C, IS = 11A, VGS = 0V trr Reverse Recovery Time ––– 14 21 ns TJ = 25°C, IF = 11A, VDD = 15V Qrr Reverse Recovery Charge ––– 15 23 nC di/dt = 300A/μs ton Forward Turn-On Time 2 c MOSFET symbol A D G e e Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) www.irf.com © 2013 International Rectifier October 02, 2013 IRF8721PbF-1 1000 1000 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V 1 0.1 100 BOTTOM 10 2.3V 1 0.01 0.1 1 10 0.1 100 10 100 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 1000 2.0 VDS = 15V ≤ 60μs PULSE WIDTH 100 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) 10 TJ = 150°C 1 TJ = 25°C 0.1 0.01 1.0 2.0 3.0 4.0 VGS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 3 ≤ 60μs PULSE WIDTH Tj = 150°C ≤ 60μs PULSE WIDTH Tj = 25°C 2.3V VGS 10V 5.0V 4.5V 3.5V 3.0V 2.7V 2.5V 2.3V www.irf.com © 2013 International Rectifier ID = 14A VGS = 10V 1.5 1.0 0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature (°C) Fig 4. Normalized On-Resistance Vs. Temperature October 02, 2013 IRF8721PbF-1 16 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd VGS, Gate-to-Source Voltage (V) C, Capacitance (pF) 10000 Coss = Cds + Cgd 1000 Ciss Coss Crss ID= 11A VDS= 24V VDS= 15V 12 8 4 0 100 1 10 0 100 5 1000 1000 ID, Drain-to-Source Current (A) ISD , Reverse Drain Current (A) 20 25 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 TJ = 150°C 10 TJ = 25°C OPERATION IN THIS AREA LIMITED BY R DS(on) 100 100μsec 1msec 10 10msec 1 VGS = 0V TA = 25°C Tj = 150°C Single Pulse 0.1 0.1 0.2 0.4 0.6 0.8 1.0 VSD , Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 15 Qg, Total Gate Charge (nC) VDS , Drain-to-Source Voltage (V) 1 10 www.irf.com © 2013 International Rectifier 0.1 1 10 VDS, Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area October 02, 2013 100 IRF8721PbF-1 2.4 2.2 VGS(th) Gate threshold Voltage (V) ID , Drain Current (A) 16 12 8 4 2.0 1.8 ID = 25μA 1.6 1.4 1.2 1.0 0 0.8 25 50 75 100 125 150 -75 -50 -25 TA, Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature 0 25 50 75 100 125 150 TJ , Temperature ( °C ) Fig 10. Threshold Voltage Vs. Temperature 100 Thermal Response ( ZthJA ) D = 0.50 10 0.20 0.10 0.05 R1 R1 0.02 0.01 1 τJ τJ τ1 R2 R2 R3 R3 R4 R4 τ3 τ4 τa τ1 τ2 τ2 τ3 τ4 Ci= τi/Ri Ci i/Ri 0.1 Ri (°C/W) τι (sec) 1.935595 0.000148 7.021545 0.019345 26.61013 0.81305 14.43961 26.2 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthja + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.01 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 10 t1, Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5 www.irf.com © 2013 International Rectifier October 02, 2013 100 16 300 ID = 14A 14 12 TJ = 125°C 10 8 TJ = 25°C 6 2.0 4.0 6.0 8.0 EAS, Single Pulse Avalanche Energy (mJ) ( Ω) RDS (on), Drain-to -Source On Resistance m IRF8721PbF-1 ID 0.83A 1.05A BOTTOM 11A 250 TOP 200 150 100 50 0 10.0 25 VGS, Gate-to-Source Voltage (V) 50 75 20V V(BR)DSS tp DRIVER L D.U.T + V - DD IAS A 0.01Ω tp I AS Fig 14a. Unclamped Inductive Test Circuit VDS VGS RG Fig 14b. Unclamped Inductive Waveforms RD VDS 90% D.U.T. + -VDD V10V GS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 10% VGS td(on) Fig 15a. Switching Time Test Circuit 6 150 Fig 13. Maximum Avalanche Energy vs. Drain Current 15V RG 125 Starting T J, Junction Temperature (°C) Fig 12. On-Resistance vs. Gate Voltage VDS 100 www.irf.com © 2013 International Rectifier tr t d(off) tf Fig 15b. Switching Time Waveforms October 02, 2013 IRF8721PbF-1 Id Current Regulator Same Type as D.U.T. Vds Vgs 50KΩ .2μF 12V .3μF + V - DS D.U.T. Vgs(th) VGS 3mA IG ID Current Sampling Resistors Qgodr Fig 16b. Gate Charge Waveform Fig 16a. Gate Charge Test Circuit D.U.T Driver Gate Drive P.W. + + D.U.T. ISD Waveform Reverse Recovery Current + dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period * • • • • D= Period VGS=10V Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer - - RG Qgs2 Qgs1 Qgd + Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage - Body Diode VDD Forward Drop Inductor Curent ISD Ripple ≤ 5% * VGS = 5V for Logic Level Devices Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs 7 www.irf.com © 2013 International Rectifier October 02, 2013 IRF8721PbF-1 SO-8 Package Outline Dimensions are shown in milimeters (inches) D DIM B 5 A 8 6 7 6 5 H E 1 6X 2 3 0.25 [.010] 4 A e e1 8X b 0.25 [.010] A A1 INCH E S MIL L IME T E R S MIN MAX MIN A .0532 .0688 1.35 1.75 MAX A1 .0040 .0098 0.10 0.25 b .013 .020 0.33 0.51 c .0075 .0098 0.19 0.25 D .189 .1968 4.80 5.00 E .1497 .1574 3.80 4.00 e .050 B AS IC 1.27 B AS IC e1 .025 B AS IC 0.635 B AS IC H .2284 .2440 5.80 6.20 K .0099 .0196 0.25 0.50 L .016 .050 0.40 1.27 y 0° 8° 0° 8° K x 45° C y 0.10 [.004] 8X L 8X c 7 C A B FOOTPRINT 8X 0.72 [.028] NOTES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMET ER 3. DIMENS IONS ARE SHOWN IN MILLIMETERS [INCHES ]. 4. OUT LINE CONFORMS TO JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT T O EXCEED 0.15 [.006]. 6.46 [.255] 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUSIONS . MOLD PROTRUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS THE LENGT H OF LEAD FOR SOLDERING T O A S UBS TRAT E. 3X 1.27 [.050] 8X 1.78 [.070] SO-8 Part Marking Information EXAMPLE: T HIS IS AN IRF7101 (MOS FET ) INT ERNAT IONAL RECT IFIER LOGO XXXX F 7101 DAT E CODE (YWW) P = DISGNAT ES LEAD - FREE PRODUCT (OPT IONAL) Y = LAS T DIGIT OF T HE YEAR WW = WEEK A = ASS EMBLY S IT E CODE LOT CODE PART NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 8 www.irf.com © 2013 International Rectifier October 02, 2013 IRF8721PbF-1 SO-8 Tape and Reel (Dimensions are shown in milimeters (inches)) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ † Qualification information Industrial Qualification level Moisture Sensitivity Level (per JEDE C JE S D47F SO-8 RoHS compliant †† guidelines) MS L1 †† (per JEDE C J-S T D-020D ) Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability †† Applicable version of JEDEC standard at the time of product release Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25°C, L = 1.09mH, RG = 25Ω, IAS = 11A. Pulse width ≤ 400μs; duty cycle ≤ 2%. When mounted on 1 inch square copper board. Rθ is measured at TJ of approximately 90°C. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 9 www.irf.com © 2013 International Rectifier October 02, 2013