ZSELEC MM1Z12 500mw silicon planar zener diode Datasheet

Z ibo Seno Electronic Engineering Co., Ltd.
MM1Z2V0~MM1Z75
500mW Silicon Planar Zener Diodes
Features
• Total power dissipation: max. 500 mW
• Small plastic package suitable for
surface mounted design
• Tolerance approximately ± 5%
PINNING
PIN
DESCRIPTION
1
Cathode
2
Anode
2
1
Top View
Simplified outline SOD-123 and symbol
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Power Dissipation
Junction Temperature
Storage Temperature Range
Characteristics at Ta = 25 OC
Parameter
Thermal Resistance Junction to Ambient Air
Forward Voltage
at IF = 10 mA
MM1Z2V0~MM1Z75
1 of 3
Symbol
Value
Unit
Ptot
500
mW
Tj
150
O
Tstg
- 55 to + 150
O
Symbol
Max.
RthA
340
VF
0.9
C
C
Unit
C/W
O
V
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Z ibo Seno Electronic Engineering Co., Ltd.
MM1Z2V0~MM1Z75
Characteristics at Ta = 25 OC
Zener Voltage Range 1)
Type
2)
2)
Reverse Leakage Current
Marking
Code
Vznom
VZT
at IZT
ZZT
at IZT
IR
at VR
4A
4B
4C
4D
4E
4F
4H
4J
4K
4M
4N
4P
4R
4X
4Y
4Z
5A
5B
5C
5D
5E
5F
5H
5J
5K
5M
5N
5P
5R
5X
5Y
5Z
6A
6B
6C
6D
6E
6F
6H
V
2
2.2
2.4
2.7
3
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
V
1.8...2.15
2.08...2.33
2.28...2.56
2.5...2.9
2.8...3.2
3.1...3.5
3.4...3.8
3.7...4.1
4...4.6
4.4...5
4.8...5.4
5.2...6
5.8...6.6
6.4...7.2
7...7.9
7.7...8.7
8.5...9.6
9.4...10.6
10.4...11.6
11.4...12.7
12.4...14.1
13.8...15.6
15.3...17.1
16.8...19.1
18.8...21.2
20.8...23.3
22.8...25.6
25.1...28.9
28...32
31...35
34...38
37...41
40...46
44...50
48...54
52...60
58...66
64...72
70...79
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Max. (Ω)
100
100
100
110
120
130
130
130
130
130
130
80
50
30
30
30
30
30
30
35
35
40
40
45
50
55
60
70
80
80
90
100
130
150
180
180
200
250
300
mA
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2
2
2
2
2
2
2
2
2
2
2
2
Max. (μA)
120
120
120
120
50
20
10
5
5
2
2
1
1
0.5
0.5
0.5
0.5
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
2
2
2
1
1
0.2
0.2
0.2
V
0.5
0.7
1
1
1
1
1
1
1
1
1.5
2.5
3
3.5
4
5
6
7
8
9
10
11
12
13
15
17
19
21
23
25
27
30
33
36
39
43
47
52
57
MM1Z2V0
MM1Z2V2
MM1Z2V4
MM1Z2V7
MM1Z3V0
MM1Z3V3
MM1Z3V6
MM1Z3V9
MM1Z4V3
MM1Z4V7
MM1Z5V1
MM1Z5V6
MM1Z6V2
MM1Z6V8
MM1Z7V5
MM1Z8V2
MM1Z9V1
MM1Z10
MM1Z11
MM1Z12
MM1Z13
MM1Z15
MM1Z16
MM1Z18
MM1Z20
MM1Z22
MM1Z24
MM1Z27
MM1Z30
MM1Z33
MM1Z36
MM1Z39
MM1Z43
MM1Z47
MM1Z51
MM1Z56
MM1Z62
MM1Z68
MM1Z75
1)
Dynamic Impedance
VZ is tested with pulses (20 ms).
ZZT is measured at IZ by given a very small A.C. current signal.
MM1Z2V0~MM1Z75
2 of 4
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MM1Z2V0~MM1Z75
Breakdown characteristics
Tj = constant (pulsed)
mA
50
Iz
Tj=25o C
3V9
2V7
6V8
4V7
3V3
40
8V2
5V6
30
20
Test current Iz
5mA
10
0
0
1
2
4
3
5
6
7
10 V
9
8
Vz
Breakdown characteristics
Tj = constant (pulsed)
mA
30
Tj=25 oC
10
12
Iz
15
20
18
22
27
Test current Iz
5mA
10
33
0
0
10
20
30
40 V
Vz
Power Dissipation: Ptot (mW)
600
500
400
300
200
100
0
0
25
50
75
125
100
150
Ambient Temperature: Ta ( C)
Power Dissipation vs Ambient Temperature
O
MM1Z2V0~MM1Z75
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Z ibo Seno Electronic Engineering Co., Ltd.
MM1Z2V0~MM1Z75
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD-123FL
c
A
∠ ALL ROUND
HE
MM1Z2V0~MM1Z75
A
bp
E
D
UNIT
A
bp
c
D
E
HE
v
∠
mm
1.15
1.05
0.6
0.5
0.135
0.100
2.7
2.6
1.65
1.55
3.85
3.55
0.2
5
4 of 4
O
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