DYELEC DMT3N60-TU 600v n-channel power mosfet Datasheet

3N60
600V N-Channel Power MOSFET
●
●
●
●
●
RDS(ON) < 3.6Ω@ VGS = 10V, ID =1.5A
Fast switching capability
Lead free in compliance with EU RoHS directive.
Improved dv/dt capability, high ruggedness
PRODUCT SUMMARY
VDS (V)
RDS(on)(Ω)
600
Current
3A
3.6 @ VGS =10V
Case: TO-251,TO-252,TO-220,ITO-220
TO-262,TO-263 Package
Pin Definition:
1. Gate
2. Drain
3. Source
Ordering Information
Package
Packing
DMP3N60-TU
TO-251
75pcs / Tube
DMD3N60-TR
TO-252
DMD3N60-TU
TO-252
2.5Kpcs / 13” Reel
75pcs / Tube
DMT3N60-TU
TO-220
50pcs / Tube
DMF3N60-TU
ITO-220
50pcs / Tube
DMK3N60-TU
TO-262
50pcs / Tube
DMG3N60-TU
TO-263
DMG3N60-TU
TO-263
50pcs / Tube
800pcs / 13" Reel
Part No.
Block Diagram
D
G
S
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Avalanche Current (Note 2)
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
SYMBOL
VDSS
VGSS
IAR
ID
IDM
RATINGS
600
±30
3.0
3.0
12
UNIT
V
V
A
A
A
EAS
200
mJ
75
W
34
W
50
W
+150
-55 ~ +150
-55 ~ +150
°C
°C
°C
TO-220/TO-262/TO-263
Power Dissipation
ITO-220
PD
TO-251/TO-252
Junction Temperature
Operating Temperature
Storage Temperature
TJ
TOPR
TSTG
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ.
3. L = 44.4mH, IAS=3A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
May,2015-REV.00
www.dyelec.com
1/8
3N60
600V N-Channel Power MOSFET
THERMAL DATA
PARAMETER
TO-220/ITO-220
TO-262/TO-263
Junction to Ambient
TO-251/ TO-252
SYMBOL
RATING
θJA
°C/W
110
1.70
TO-220/TO-262/TO-263
Junction to Case
UNIT
62.5
ITO-220
°C/W
3.70
θJC
TO-251/ TO-252
2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
SYMBOL
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
e
TEST CONDITIONS
BVDSS
VGS = 0V, ID = 250μA
IDSS
VDS = 600V, VGS = 0V
10
μA
VGS = 30V, VDS = 0V
100
nA
VGS = -30V, VDS = 0V
-100
nA
4.0
3.6
V
Ω
350
50
5.5
450
65
7.5
pF
pF
pF
35
60
100
65
18.5
5.2
4.9
50
70
150
75
23
-
ns
ns
ns
ns
nC
nC
nC
1.4
V
3.0
A
12
A
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH)
VDS = VGS, ID = 250μA
Static Drain-Source On-State Resistance
RDS(ON)
VGS=10 V, ID=1.5A
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
VDS = 25V, VGS = 0V,
Output Capacitance
COSS
f = 1MHz
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS
Turn-On Delay Time
tD(ON)
Turn-On Rise Time
tR
VDD =30V, ID =0.5A,
R
Turn-Off Delay Time
tD(OFF)
G=25Ω (Note 1, 2)
Turn-Off Fall Time
tF
Total Gate Charge
QG
VDS=50V, ID=1.3 A, IG=100μA
Gate-Source Charge
QGS
VGS=10V (Note 1, 2)
Gate-Drain Charge
QGD
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
VGS=0 V, IS=3.0A
Drain-Source Diode Forward Voltage
VSD
Maximum Continuous Drain-Source Diode
IS
Forward Current
Maximum Pulsed Drain-Source Diode
ISM
Forward Current
Reverse Recovery Time
trr
VGS = 0 V, IS = 3A,
dIF/dt = 100 A/μs (Note 1)
Reverse Recovery Charge
QRR
Notes: 1. Pulse Test: Pulse width≤300μs, Duty cycle≤2%
2.. Essentially independent of operating temperature
May,2015-REV.00
MIN TYP MAX UNIT
www.dyelec.com
600
V
2.0
210
1.2
ns
μC
2/8
3N60
600V N-Channel Power MOSFET
TYPICAL CHARACTERISTICS
On-Resistance Variation vs.
Drain Current and Gate Voltage
On State Current vs.
Allowable Case Temperature
10
Reverse Drain Current, IDR (A)
Drain-Source On-Resistance,
RDS(ON) (Ω)
6
5
VGS=20V
4
VGS=10V
3
2
1
0
0
2
4
6
Note::
J=25℃
8
10
12
1
0.1
0.2 0.4 0.6 0.8 1.0 1.2
1.4 1.6
1.8
Source-Drain Voltage, VSD (V)
Drain Current, ID (A)
May,2015-REV.00
Notes:
1. VGS=0V
2. 250µs Test
www.dyelec.com
3/8
3N60
600V N-Channel Power MOSFET
Drain-Source Breakdown Voltage, BVDSS
(Normalized)
Drain-Source On-Resistance, RDS(ON)
(Normalized)
TYPICAL CHARACTERISTICS
Maximum Drain Current vs. Case
Temperature
Transient Thermal Response Curve
3.0
1
2.5
D=0.5
2.0
0.2
0.1
0.1
1.5
0.05
0.02
1.0
0.01
Single Pulse
0.01
Notes:
1. θJC (t) = 1.18 /W Max.
2. Duty Factor, D=t1/t2
3. TJM-TC=PDM×θJC (t)
0.5
10-5
10-4 10-3
10-2
10-1
100
101
Square Wave Pulse Duration, t1 (sec)
0
25
50
75
100
125
Case Temperature, TC (°C)
150
Safe Operating Area – 600V
Operation in This Area is Limited by RDS(on)
101
100µs
1ms
10ms
100
DC
10-1
Notes:
1. TJ=25
2. TJ=150
3. Single Pulse
10-2
100
101
102
600
103
Drain-Source Voltage, VDS (V)
May,2015-REV.00
www.dyelec.com
4/8
3N60
600V N-Channel Power MOSFET
TO-220 Mechanical Drawing
ITO-220 Mechanical Drawing
May,2015-REV.00
www.dyelec.com
5/8
3N60
600V N-Channel Power MOSFET
TO-262 Mechanical Drawing
TO-263 Mechanical Drawing
May,2015-REV.00
www.dyelec.com
6/8
3N60
600V N-Channel Power MOSFET
TO-251 Mechanical Drawing
TO-252 Mechanical Drawing
May,2015-REV.00
www.dyelec.com
7/8
3N60
600V N-Channel Power MOSFET
Notice
Specifications of the products displayed herein are subject to change without notice. DIYI or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to any
intellectual property rights is granted by this document. Except as provided in DIYI’s terms and conditions of sale for
such products, DIYI assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale
and/or use of DIYI products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify DIYI for any damages resulting from such improper use or sale.
May,2015-REV.00
www.dyelec.com
8/8
Similar pages