CYSTEKEC MTE080N15Q8 N-channel enhancement mode power mosfet Datasheet

Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 1/9
CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
MTE080N15Q8
Features
• Single Drive Requirement
• Low On-resistance
• Fast Switching Characteristic
• Pb-free & Halogen-free package
BVDSS
ID @ TA=25°C, VGS=10V
RDS(ON)@VGS=10V, ID=4A
RDS(ON)@VGS=6V, ID=3.3A
Symbol
150V
4A
77 mΩ(typ)
82 mΩ(typ)
Outline
MTE080N15Q8
D
D
SOP-8
D
D
G
G:Gate D:Drain S:Source
Pin 1
S
S
S
Ordering Information
Device
MTE080N15Q8-0-T3-G
Package
Shipping
SOP-8
(RoHS compliant & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant
and green compound products
Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTE080N15Q8
CYStek Product Specification
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 2/9
CYStech Electronics Corp.
Absolute Maximum Ratings (Tc=25°C, unless otherwise noted)
Parameter
Symbol
Limits
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Pulsed Drain Current
Avalanche Current @ L=0.1mH
Avalanche Energy @ L=1mH, ID=8A, VDD=30V
Repetitive Avalanche Energy @ L=0.05mH
TA=25 °C
Total Power Dissipation
TA=70 °C
Operating Junction and Storage Temperature
Note : *1. Pulse width limited by maximum junction temperature
VDS
VGS
150
±20
4
3.2
20 *1
8
32 *3
1.6 *2
3.1
2
-55~+150
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Unit
V
A
mJ
W
°C
*2. Duty cycle ≤ 1%
*3. 100% tested by conditions of L=0.5mH, IAS=3A, VGS=10V, VDD=50V
Thermal Data
Parameter
Thermal Resistance, Junction-to-case
Thermal Resistance, Junction-to-ambient (Note)
Symbol
RθJC
RθJA
Value
20
40
Unit
°C/W
Note : 40°C / W when mounted on a 1 in2 pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Static
BVDSS
VGS(th)
GFS
IGSS
IDSS
*RDS(ON)
Dynamic
Qg *1, 2
Qgs *1, 2
Qgd *1, 2
Ciss
Coss
Crss
MTE080N15Q8
Min.
Typ.
Max.
150
2
-
7.7
77
82
4
±100
1
25
100
120
-
33.7
7.1
11.9
683
53
24
50
-
Unit
V
S
nA
μA
mΩ
Test Conditions
VGS=0V, ID=250μA
VDS = VGS, ID=250μA
VDS =10V, ID=3A
VGS=±20V, VDS=0V
VDS =120V, VGS =0V
VDS =120V, VGS =0V, Tj=125°C
VGS =10V, ID=4A
VGS =6V, ID=3.3A
nC
VDS=120V, VGS=10V, ID=4A
pF
VDS=100V, VGS=0V, f=1MHz
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 3/9
Characteristics (Cont. TC=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Dynamic
td(ON) *1, 2
10.6
tr
17.6
*1, 2
ns
td(OFF) *1, 2
33.4
tf *1, 2
34.2
Ω
Rg
3.6
Source-Drain Diode Ratings and Characteristics
IS *1
4
A
ISM *3
16
VSD *1
0.75
1.2
V
trr
34
ns
Qrr
55
nC
Test Conditions
VDS=75V, ID=1A, VGS=10V, RGS=3Ω
f=1MHz
IS=2.3A, VGS=0V
IF=2.3A, dIF/dt=100A/μs
Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
*2.Independent of operating temperature
*3.Pulse width limited by maximum junction temperature.
Recommended Soldering Footprint
MTE080N15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 4/9
Typical Characteristics
Brekdown Voltage vs Ambient Temperature
Typical Output Characteristics
1.4
10V,9V,8V,7V,6V,5V
16
ID, Drain Current(A)
BVDSS, Normalized Drain-Source
Breakdown Voltage
20
12
4.5V
8
4
VGS=4V
1.2
1
0.8
ID=250μA,
VGS=0V
0.6
0.4
0
0
2
4
6
8
VDS, Drain-Source Voltage(V)
-75 -50 -25
10
Reverse Drain Current vs Source-Drain Voltage
Static Drain-Source On-State resistance vs Drain Current
1.2
In descending order:
VGS=5V,6V, 10V
VSD, Source-Drain Voltage(V)
R DS(ON) , Static Drain-Source On-State
Resistance(mΩ)
1000
100
1.0
Tj=25°C
0.8
0.6
Tj=150°C
0.4
0.2
10
0.1
1
10
ID, Drain Current(A)
0
100
2
4
6
8
IDR , Reverse Drain Current(A)
10
Drain-Source On-State Resistance vs Junction Tempearture
Static Drain-Source On-State Resistance vs Gate-Source
Voltage
250
2.8
R DS(ON) , Normalized Static DrainSource On-State Resistance
R DS(ON) , Static Drain-Source OnState Resistance(mΩ)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
ID=2A. 3.3A, 4A
from left to right
200
150
100
50
2.4
VGS=10V, ID=4A
RDS(ON) @Tj=25°C : 77mΩ typ.
2.0
1.6
1.2
0.8
0.4
0.0
0
0
MTE080N15Q8
2
4
6
8
VGS, Gate-Source Voltage(V)
10
-75 -50 -25 0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 5/9
Typical Characteristics(Cont.)
Threshold Voltage vs Junction Tempearture
Capacitance vs Drain-to-Source Voltage
1.4
VGS(th), Normalized Threshold Voltage
Capacitance---(pF)
10000
Ciss
1000
C oss
100
Crss
f=1MHz
10
0
5
10
15
20
25
30
VDS, Drain-Source Voltage(V)
35
1.2
ID=1mA
1.0
0.8
0.6
ID=250μA
0.4
-75 -50 -25
40
Forward Transfer Admittance vs Drain Current
Gate Charge Characteristics
10
VDS=10V
10
1
VDS=15V
0.1
Pulsed
Ta=25°C
V DS=75V
8
VGS, Gate-Source Voltage(V)
GFS , Forward Transfer Admittance(S)
100
VDS=30V
6
VDS=120V
4
2
ID=4A
0
0.01
0.001
0.01
0.1
1
ID, Drain Current(A)
0
10
5
10
15
20
25
30
Qg, Total Gate Charge(nC)
35
40
Maximum Drain Current vs Junction Temperature
Maximum Safe Operating Area
5
RDS(ON)
Limited
10
100μs
1
1ms
10ms
TA=25°C, Tj=150°C
VGS=10V,RθJA=40°C/W
Single Pulse
0.1
100ms
1s
DC
MTE080N15Q8
0.1
1
10
100
VDS, Drain-Source Voltage(V)
4
3
2
1
TA=25°C,RθJA=40°C/W,VGS=10V
0
0.01
0.01
ID, Maximum Drain Current(A)
100
ID, Drain Current(A)
0 25 50 75 100 125 150 175
Tj, Junction Temperature(°C)
1000
25
50
75
100
125
150
Tj, Junction Temperature(°C)
175
CYStek Product Specification
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 6/9
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Typical Transfer Characteristics
20
300
Single Pulse Power Rating, Junction to Ambient
(Note on page 2)
TJ(MAX) =150°C
TA=25°C
RθJA=40°C/W
250
16
Power (W)
ID, Drain Current (A)
VDS=10V
12
8
200
150
100
4
50
0
0
1
2
3
4
5
6
7
8
VGS, Gate-Source Voltage(V)
9
10
0
0.0001
0.001
0.01
0.1
1
Pulse Width(s)
10
100
Transient Thermal Response Curves
r(t), Normalized Effective Transient Thermal
Resistance
10
1
D=0.5
0.2
0.1
1.RθJA(t)=r(t)*RθJA
2.Duty Factor, D=t1/t2
3.TJM -TA=PDM *RθJA(t)
4.RθJA=40°C/W
0.1
0.05
0.02
0.01
0.01
0.001
1.E-04
MTE080N15Q8
Single Pulse
1.E-03
1.E-02
1.E-01
1.E+00
t1, Square Wave Pulse Duration(s)
1.E+01
1.E+02
1.E+03
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 7/9
Reel Dimension
Carrier Tape Dimension
MTE080N15Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 8/9
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note :1. All temperatures refer to topside of the package, measured on the package body surface.
2.For devices mounted on FR-4 PCB of 1.6mm or equivalent grade PCB. If other grade PCB is used, care
should be taken to match the coefficients of thermal expansion between components and PCB. If they are
not matched well, the solder joints may crack or the bodies of the parts may crack or shatter as the assembly
cools.
MTE080N15Q8
CYStek Product Specification
Spec. No. : C987Q8
Issued Date : 2017.08.01
Revised Date :
Page No. : 9/9
CYStech Electronics Corp.
SOP-8 Dimension
Marking:
Device Name
Date Code
E080
N15
Date Code(counting from left to right) :
1st code: year code, the last digit of Christian year
2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D
May→E, Jun→F, Jul→G, Aug→H, Sep→J,
Oct→K, Nov→L, Dec→M
3rd and 4th codes : prodcution serial number, 01~99
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
Millimeters
Min.
Max.
1.350
1.750
0.100
0.250
1.350
1.550
0.330
0.510
0.170
0.250
4.700
5.100
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.053
0.069
0.004
0.010
0.053
0.061
0.013
0.020
0.006
0.010
0.185
0.200
DIM
E
E1
e
L
θ
Millimeters
Min.
Max.
3.800
4.200
5.800
6.200
1.270 (BSC)
0.300
1.270
8°
0
Inches
Min.
Max.
0.150
0.165
0.228
0.244
0.050 (BSC)
0.012
0.050
8°
0
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated.
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTE080N15Q8
CYStek Product Specification
Similar pages