ISSI ® IS62C1024 128K x 8 HIGH-SPEED CMOS STATIC RAM FEATURES • High-speed access time: 35, 45, 55, 70 ns • Low active power: 450 mW (typical) • Low standby power: 500 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • Fully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply JANUARY 2000 DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024 is available in 32-pin 525-mil plastic SOP and TSOP (type 1) packages. FUNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 512 X 2048 MEMORY ARRAY I/O DATA CIRCUIT COLUMN I/O VCC GND I/O0-I/O7 CE1 CE2 OE WE CONTROL CIRCUIT ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Silicon Solution, Inc. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 1 ISSI IS62C1024 ® PIN CONFIGURATION 32-Pin SOP 32-Pin TSOP (Type 1) NC 1 32 VCC A16 2 31 A15 A14 3 30 CE2 A12 4 29 WE A7 5 28 A13 A6 6 A5 7 62C1024 27 26 A4 8 25 A11 A3 9 24 OE A2 10 23 A10 A1 11 22 CE1 ISSI A8 A9 A0 12 21 I/O7 I/O0 13 20 I/O6 I/O1 14 19 I/O5 I/O2 15 18 I/O4 GND 16 17 I/O3 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 PIN DESCRIPTIONS A0-A16 Address Inputs CE1 Chip Enable 1 Input CE2 Chip Enable 2 Input OE Output Enable Input WE Write Enable Input I/O0-I/O7 Input/Output Vcc Power GND Ground OPERATING RANGE Range Commercial Industrial 2 Ambient Temperature 0°C to +70°C VCC 5V ± 10% –40°C to +85°C 5V ± 10% Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 ISSI IS62C1024 ® TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE CE1 CE2 OE X X H H L H X L L L X L H H H X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 I CC I CC I CC ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –10 to +85 –65 to +150 1.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol Parameter CIN Input Capacitance COUT Output Capacitance Conditions Max. Unit VIN = 0V 6 pF VOUT = 0V 8 pF Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol Parameter Test Conditions Min. Max. Unit VOH VOL VIH VIL ILI Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage VCC = Min., IOH = –1.0 mA VCC = Min., IOL = 2.1 mA Output Leakage GND ≤ VOUT ≤ VCC — 0.4 VCC + 0.5 0.8 5 10 5 10 V V V V µA ILO 2.4 — 2.2 –0.3 –5 –10 –5 –10 GND ≤ VIN ≤ VCC Com. Ind. Com. Ind. µA Notes: 1. VIL = –3.0V for pulse width less than 10 ns. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 3 ISSI IS62C1024 ® POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -35 Min. Max. Test Conditions -45 Min. Max. -55 Min. Max. -70 Min. Max. Unit ICC Vcc Dynamic Operating Supply Current VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. — — 150 160 — — 135 145 — — 120 130 — — 90 100 mA ISB1 TTL Standby Current (TTL Inputs) VCC = Max., Com. VIN = VIH or VIL, CE1 ≥ VIH, Ind. or CE2 ≤ VIL, f = 0 — — 40 60 — — 40 60 — — 40 60 — — 40 60 mA ISB2 CMOS Standby Current (CMOS Inputs) VCC = Max., Com. CE1 ≤ VCC – 0.2V, Ind. CE2 ≤ 0.2V, VIN ≥ VCC – 0.2V, or VIN ≤ 0.2V, f = 0 — — 30 40 — — 30 40 — — 30 40 — — 30 40 mA Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b AC TEST LOADS 480 Ω 5V 5V OUTPUT OUTPUT 100 pF Including jig and scope Figure 1a. 4 480 Ω 255 Ω 5 pF Including jig and scope 255 Ω Figure 1b. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 ISSI IS62C1024 ® READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter -35 Min. Max. -45 Min. Max. -55 Min. Max. -70 Min. Max. Unit tRC Read Cycle Time 35 — 45 — 55 — 70 — ns tAA Address Access Time — 35 — 45 — 55 — 70 ns tOHA Output Hold Time 3 — 3 — 3 — 3 — ns tACE1 CE1 Access Time — 35 — 45 — 55 — 70 ns tACE2 CE2 Access Time — 35 — 45 — 55 — 70 ns tDOE OE Access Time — 10 — 20 — 25 — 35 ns OE to Low-Z Output 0 — 0 — 0 — 0 — ns tHZOE OE to High-Z Output 0 10 0 15 0 20 0 25 ns tLZCE1(2) CE1 to Low-Z Output 3 — 5 — 7 — 10 — ns tLZCE2(2) CE2 to Low-Z Output 3 — 5 — 7 — 10 — ns tHZCE CE1 or CE2 to High-Z Output 0 10 0 15 0 20 0 25 ns tLZOE (2) (2) (2) Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC WAVEFORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA DOUT Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 tOHA DATA VALID 5 ISSI IS62C1024 ® READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tHZOE tDOE CE1 tLZOE tACE1/tACE2 CE2 DOUT tLZCE1/ tLZCE2 tHZCE HIGH-Z DATA VALID Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power) -35 Symbol Parameter -45 -55 Min. Max. Min. Max. Min. Max. -70 Min. Max. Unit tWC Write Cycle Time 35 — 45 — 55 — 70 — ns tSCE1 CE1 to Write End 25 — 35 — 50 — 60 — ns tSCE2 CE2 to Write End 25 — 35 — 50 — 60 — ns tAW Address Setup Time to Write End 25 — 35 — 45 — 60 — ns tHA Address Hold from Write End 0 — 0 — 0 — 0 — ns tSA Address Setup Time 0 — 0 — 0 — 0 — ns WE Pulse Width 25 — 35 — 40 — 50 — ns Data Setup to Write End 20 — 25 — 25 — 30 — ns tPWE (4) tSD tHD Data Hold from Write End 0 — 0 — 0 — 0 — ns (2) tHZWE WE LOW to High-Z Output — 10 — 15 — 20 — 25 ns (2) tLZWE WE HIGH to Low-Z Output 3 — 5 — 5 — 5 — ns Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. 6 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 ISSI IS62C1024 ® AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2) tWC ADDRESS tHA tSCE1 CE1 tSCE2 CE2 tAW tPWE(4) WE tSA DOUT tHZWE tLZWE HIGH-Z DATA UNDEFINED tSD DIN tHD DATA-IN VALID WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2) tWC ADDRESS tSA tHA tSCE1 CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE DOUT DATA UNDEFINED tLZWE HIGH-Z tSD DIN tHD DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00 7 ISSI IS62C1024 ® ORDERING INFORMATION Commercial Range: 0°C to +70°C Speed (ns) Order Part No. Package 35 35 IS62C1024-35Q IS62C1024-35T 525-mil Plastic SOP TSOP, Type 1 45 45 IS62C1024-45Q IS62C1024-45T 525-mil Plastic SOP TSOP, Type 1 55 55 IS62C1024-55Q IS62C1024-55T 525-mil Plastic SOP TSOP, Type 1 70 70 IS62C1024-70Q IS62C1024-70T 525-mil Plastic SOP TSOP, Type 1 Industrial Range: –40°C to +85°C Speed (ns) Order Part No. Package 35 35 IS62C1024-35QI IS62C1024-35TI 525-mil Plastic SOP TSOP, Type 1 45 45 IS62C1024-45QI IS62C1024-45TI 525-mil Plastic SOP TSOP, Type 1 55 55 IS62C1024-55QI IS62C1024-55TI 525-mil Plastic SOP TSOP, Type 1 70 70 IS62C1024-70QI IS62C1024-70TI 525-mil Plastic SOP TSOP, Type 1 ISSI ® Integrated Silicon Solution, Inc. 2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: [email protected] www.issi.com 8 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. G 01/14/00