ＩＮJ0002AＸ SERIES High speed switching Silicon P-channel MOSFET OUTLINE DRAWING DESCRIPTION INJ0002AX is a Silicon P-channel MOSFET. This product is most suitable for low voltage use such as portable machinery , because of low voltage drive and low on resistance. INJ0002AT2 INJ0002AM1 2.1 0.3 ② 0.425 ③ 0.15 ① 1.25 0～0.1 0.7 0.5 0.9 ③ 0.65 1.2 0.8 2.0 1.3 ② 0.2 0.25 0.4 ① 0.4 FEATURE 0.425 0.65 0.8 0.2 ・Input impedance is high, and not necessary to consider a drive electric current. ・Vth is low, and drive by low voltage is possible. Vth=-0.6～-1.2V ・Low on Resistance. Ron=3Ω(TYP) ・High speed switching. ・Small package for easy mounting. Unit：mm APPLICATION high speed switching , Analog switching JEITA, JEDEC：－ ISAHAYA：T-USM JEITA：SC-70 JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN INJ0002AU1 INJ0002AC1 1.6 EQUIVALENT CIRCUIT 0.4 0.8 2.5 0.4 0.5 1.5 0.5 ② 0.4 0.95 ③ ① 0.95 2.9 1.90 ② 0.3 0.5 ① 1.6 1.0 G 0.5 D ③ JEITA：SC-75A JEDEC：－ TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ISAHAYA ELECTRONICS CORPORATION 0.16 0～0.1 0.8 1.1 0.15 0～0.1 0.55 0.7 S JEITA：SC-59 JEDEC：Similar to TO-236 T TERMINAL CONNECTOR ①：GATE ②：SOURCE ③：DRAIN ＩＮJ0002AＸ SERIES High speed switching Silicon P-channel MOSFET MAXIMUM RATING（Ｔａ＝２５℃） SYMBOL PARAMETER ＶDSS ＶGSS Ｉ D Drain-source voltage Gate-source voltage Drain current Total power dissipation （Ta=25℃） Channel temperature Range of Storage temperature ＰＣ Ｔch Ｔｓｔｇ 125（※） PARAMETER V(BR)DSS IGSS IDSS Vth | Yfs | Drain-source breakdown voltage RDS(ON) Ciss Coss tON tOFF UNIT INJ0002AC1 V V mA 200 mW +150 -55～+150 ℃ ℃ ※package mounted on 9mm×19mm×1mm glass-epoxy substrate. TEST CONDITION I D=-100μA, VGS=0V Gate-source leak current V GS Zero gate voltage drain current V DS Gate threshold voltage 150 +125 -55～+125 ELECTRICAL CHARACTERISTICS（Ｔａ＝２５℃） SYMBOL RATING INJ0002AU1 INJ0002AM1 -30 ±8 -200 INJ0002AT2 MIN -30 LIMIT TYP - MAX - - - ±0.5 μA =±5V, VDS=0V =-30V ,VGS=0V I D=-250μA, V DS= V GS UNIT V - - -1.0 μA -0.6 - -1.2 V - 220 - mS - 3 - Ω Forward transfer admittance Static drain-source on-state resistance Input capacitance V =-10V, I D=-0.1A V DS GS =0V,f=1MHz - 35 - pF Output capacitance V DS=-10V, V GS=0V,f=1MHz - 7.3 - pF Switching time V V DD - 14 - GS - 100 - DS I D=-100mA, V =-10V, V =-4.0V GS =-5V , I D=-10mA =0～-5V ns Switching time test condition test circuit OUT IN 0 RL 50Ω -5V 10μs VDD=-5V D.U.≦1% Common source Ta=25℃ 0V input waveform 10% 90% -5V VDD VDS(ON） 90% output waveform 10% VDD tf tr ton ISAHAYA ELECTRONICS CORPORATION toff TYPICAL CHARACTERISTICS ID -VDS Ta=25℃ -100 -1 -1.9V -1.0V -0.95V -1.8V -80 -1.7V -60 -1.6V -1.5V -40 -1.4V VGS=-1.3V -20 -0.8 Drain current ID (mA) Drain current ID (mA) ID -VDS(Low voltage region) Ta=25℃ -0.85V -0.9V -0.6 VGS=-0.8V -0.4 -0.2 -0 -0 -0 -2 -4 -6 -8 -10 -0 -0.1 -0.2 Drain-Source voltage VDS (V) -0.4 -0.5 -2 -3 -4 Gate-Source voltage VGS (V) -5 IDR -VDS ID -VGS -1000 -100 Ta=25℃ VDS=-10V Drain current ID (mA) Drain reverse current IDR (mA) Ta=25℃ VGS=0V -10 -100 -10 -1 -1 0 0.5 1 1.5 2 -0 Drain-Source voltage VDS (V) -1 |Yfs| - ID VDS(ON) -ID -1000 1000 Ta=25℃ VGS=-4V Drain-Source ON voltage VDS(ON) (mV) Ta=25℃ VDS=-10V Forward transfer admittance |Yfs| (mS) -0.3 Drain-Source voltage VDS (V) 100 10 -100 -10 -1 1 -1 -10 -100 -1 -1000 -10 C - VDS t - ID 10000 100 Ta=25℃ toff -100 Drain current ID (mA) Drain current ID (mA) tf Capacitance C (pF) Switching time t (ns) Ciss 1000 100 ton 10 Coss 10 Ta=25℃ VGS=0V tr 1 -0.1 -1 -10 Drain current ID (mA) -100 1 -0.1 -1 -10 Drain-Source voltage VDS (V) ISAHAYA ELECTRONICS CORPORATION -100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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