BDX 65, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol Ratings VCEO Collector-Emitter Voltage VCEV Collector-EmitterVoltage VEBO Emitter-Base Voltage VBE=-1.5 V IC(RMS) IC Collector Current ICM Value BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Unit 60 80 100 120 80 100 120 120 V V 5.0 V 12 A 16 Base Current BDX65 BDX65A BDX65B BDX65C 0.2 A PT Power Dissipation BDX65 BDX65A BDX65B BDX65C 117 Watts W/°C TJ Junction Temperature -55 to +200 °C TS Storage Temperature BDX65 BDX65A BDX65B BDX65C IB @ TC = 25° COMSET SEMICONDUCTORS 1/4 BDX 65, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case Value Unit 1.5 °C/W BDX65 BDX65A BDX65B BDX65C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) ICEO Ratings Test Condition(s) Collector-Emitter Breakdown Voltage (*) Min Typ Mx Unit BDX65 60 - - BDX65A 80 - V IC=0.1 A, IB=0, L=25mH BDX65B 100 - - BDX65C 120 - - VCE=30 V BDX65 - - VCE=40 V BDX65A - - Collector Cutoff Current 1 VCE=50 V BDX65B - - VCE=60 V BDX65C - - COMSET SEMICONDUCTORS 2/4 mA BDX 65, A, B, C Symbol IEBO Ratings Test Condition(s) Emitter Cutoff Current BDX65 BDX65A BDX65B BDX65C Min Typ Mx Unit - - 5.0 - - 0.4 VCBO=60 V TCASE=150°C - - 3 VCBO=80 V - - 0.4 - - 3 VBE=5 V VCBO=60 V mA BDX65 BDX65A ICBO Collector-Base Cutoff Current VCBO=80 V TCASE=150°C mA - - 0.4 VCBO=100 V TCASE=150°C - - 3 VCBO=120 V - - 0.4 - - 3 - - 2 V - 1.8 - V - - 3 V - 60 - kHz VCBO=100 V BDX65B BDX65C VCBO=120 V TCASE=150° VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5.0 A, IB=20 mA VF Forward Voltage (pulse method) IF=3 A VBE Fh21e Base-Emitter Voltage (*) Forward current transfer ratio Cutoff frequency IC=5.0 A, VCE=3V VCE=3 V, IC=5 A COMSET SEMICONDUCTORS BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C 3/4 BDX 65, A, B, C Symbol fT Ratings Test Condition(s) Transition Frequency VCE=3 V, IC=5 A, f=1 MHz VCE=3 V, IC=1 A Static forward current transfer ratio (*) h21E VCE=3 V, IC=5 A VCE=3 V, IC=10 A BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Min Typ Mx Unit - 7 - - 1500 - 1000 - - - 1500 - (*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4 MHz -