DONGGUAN NANJING ELECTRONICS LTD., SOD-323 Plastic-Encapsulate Diodes SOD-323 B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES z Low Forward Voltage Drop z Guard Ring Construction for Transient Protection z High Conductance z Also Available in Lead Free Version MARKING: B0520WS: SD B0530WS: C1 B0540WS: SF Maximum Ratings @Ta=25Я Parameter Symbol Peak repetitive peak reverse voltage VRRM Working peak reverse voltage VRWM B0520WS B0530WS 20 30 B0540WS Unit 40V VR DC blocking voltage RMS reverse voltage reverse voltage (DC) VR(RMS) 14 21 28 V Io 0.5 A Forward current surge peak IFSM 5.5 A Power dissipation PD 200 mW Thermal resistance junction to ambient RșJA Я/W Tj 15 Я Storage temperature TSTG -55~+150 Я Voltage rate of change dv/dt 1000 V/ȝs Average rectified output current Junction temperature Electrical Characteristics @Ta=25Я Parameter Minimum reverse breakdown voltage Forward voltage Reverse current Reverse current Capacitance between terminals Symbol V(BR) B0520WS B0530WS B0540WS 20 -- -- -- 30 -- -- -- 40 Unit Conditions IR=250ȝA V IR=500ȝA IR=20ȝA VF1 0.33 0.36 -- IF=0.1A VF2 0.39 0.45 0.510 VF3 -- -- 0.62 IR1 75 -- -- IR2 -- 80 -- VR=15V IR3 250 100 10 VR=20V IR4 -- 500 -- IR5 -- -- 20 CT 170 170 170 V IF=0.5A IF=1A ȝA ȝA VR=10V VR=30V VR=40V pF VR=0,f=1MHz Typical Characteristics Forward 10 Characteristics B0530WS Reverse 10000 3000 Ta=100ć (uA) 25 ć REVERSE CURRENT IR = Ta 1 T= 0.3 a FORWARD CURRENT IF (A) 3 0ć 10 0.1 0.03 Characteristics 1000 300 100 30 Ta=25ć 10 3 0.01 0.0 0.2 0.4 0.6 FORWARD VOLTAGE 0.8 VF 1 1.0 5 10 15 20 REVERSE VOLTAGE Capacitance Characteristics 1000 0 (V) VR 25 30 (V) Power Derating Curve 250 Ta=25ć (mW) 200 PD 300 POWER DISSIPATION CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 100 30 10 0 5 10 REVERSE VOLTAGE 15 VR (V) 20 150 100 50 0 0 25 50 75 AMBIENT TEMPERATURE 100 Ta (ć ) 125