Weitron MMBT2907AT Pnp general purpose transistor Datasheet

MMBT2907AT
COLLECTOR
PNP General Purpose Transistors
3
3
1
1
2
BASE
SOT-523(SC-75)
2
EMITTER
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current-Continuous
Value
-60
-60
-5.0
-600
Symbol
VCEO
VCBO
VEBO
IC
Unit
Vdc
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Symbol
Max
PD
150
Thermal Resistance, Junction to Ambient
RθJA
833
C/W
Junction and Storage, Temperature
TJ,Tstg
-55 to +150
C
Characteristics
Total Device Dissipation FR-5 Board (1)
TA=25 C
Unit
mW
DEVICE MARKING
MMBT2907AT=2F
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (IC= -10 mAdc, IB=0) (2)
V(BR)CEO
-60
-
Vdc
Collector-Base Breakdown Voltage (IC= -10 µAdc, IE=0)
V(BR)CBO
-60
-
Vdc
Emitter-Base Breakdown Voltage (IE= -10 µAdc, IC=0)
V(BR)EBO
-5.0
-
Vdc
Collector Cutoff Current (VCB= -50 Vdc, IE=0)
ICBO
-
-10
nAdc
Emitter Cutoff Current (VEB= -4 Vdc, IC=0)
IEBO
-
-10
nAdc
OFF CHARACTERISTICS
1.FR-5=1.0 x 0.75 x 0.062 in
2. Pulse Test:Pulse Width=300 us, Duty Cycle <_2.0%
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MMBT2907AT
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
ON CHARACTERISTICS (1)
DC Current Gain
(I C = -0.1 mAdc, VCE= -10 Vdc)
hFE
75
-
-
(I C = -1.0 mAdc, VCE = -10 Vdc)
100
-
-
(IC = -10 mAdc, V CE = -10 Vdc)
100
-
-
(IC = -150 mAdc, VCE= -10 Vdc)
100
-
300
(IC = -500 mAdc, VCE = -10 Vdc)
50
-
-
-
-
-0.4
-1.6
Vdc
-
Collector-Emitter Saturation Voltage (3)
(IC = -150 mAdc, IB = -15mAdc)
(IC = -500 mAdc, IB = -50mAdc)
VCE(sat)
Base-Emitter Saturation Voltage (3)
(IC = -150 mAdc, IB = -15mAdc)
(I C= -500 mAdc, IB = -50mAdc)
VBE(sat)
-
-
-1.3
-2.6
Vdc
-
fT
-
140
-
MHz
CoBo
-
-
5.0
pF
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (1)
(IC = -2.0 mAdc, VCE=-12Vdc, f=30MHz)
Output Capacitance
(VCB= -12 Vdc, IE =0, f=1.0MHz)
ELECTRICAL CHARACTERISTICS (Ta=25 C unless otherwise noted) (Countinued)
Characteristics
Symbol
Min
Max
Unit
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
(VCC = -30 Vdc, I C= -150 mAdc,
IB1= -15 mAdc)
Turn-Out Time
Storage Time
Fall Time
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(VCC = -60 Vdc, IC= -150 mAdc,
IB1=IB2= -15 mAdc)
t on
-
45
td
-
10
tr
-
40
t off
-
100
ts
-
80
tf
-
30
ns
500
VCE=5V
400
125 C
300
25 C
200
100
-40 C
0
0.1
0.3
1
3
10
30
100
300
VCEBAT COLLECTOR EMITTER VOLTAGE (V)
hFE TYPICAL PULSED CURRENT GAIN
MMBT2907AT
0.5
b=10
0.4
0.3
25 C
0.2
125 C
0.1
-40 C
0
1
25 C
0.6
125 C
0.4
b=10
0.2
1
10
100
500
VBEON BASE EMITTER ON VOLTAGE (V)
-40 C
500
1
0.8
-40 C
25 C
0.6
125 C
0.4
VCE=5V
0.2
0
0.1
1
10
Ic-COLLECTOR CURRENT (mA)
Ic-COLLECTOR CURRENT (mA)
FIG.3 Base-Emitter Saturation Voltage
vs Collector Current
FIG.4 Base Emitter ON Voltage
vs Collector Current
100
25
20
VCB=35V
CAPACITANCE (pF)
VBEST BASE EMITTER VOLTAGE (V)
ICBO-COLLECTOR CUREENT (nA)
1
0
100
FIG.2 Collector-Emitter Saturation
Voltage vs collector Current
FIG.1 Typical Pulsed Current Gain
vs Collector Current
0.8
10
IC COLLECTOR CURRENT(mA)
IC COLLECTOR CURRENT(mA)
10
1
0.1
0.01
25
50
75
100
TA- AMBIENT TEMPERATURE ( C)
FIG.5 Collector-Cutoff Current
vs. Ambient Temperature
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125
16
12
Cib
8
Cob
4
0
-0.1
-1
-10
REVERSE BIAS VOLTAGE (V)
FIG.6 Input and Output Capacitance
vs Reverse Bias Voltage
-50
MMBT2907AT
500
250
I
IB1=IB2= c
10
400
TIME (nS)
VCC=15V
VCC=15V
ts
150
TIME (nS)
200
100
tr
50
10
300
200
t off
tf
100
t on
td
0
I
IB1=IB2= c
10
100
0
10
1000
100
IB1 TURN ON BASE CURRENT (mA)
FIG.7 Switching Times
vs Collector Current
FIG.8 Turn On and Turn Off Times
vs Collector Current
50
20
10
tr=15V
5
30ns
2
60ns
1
10
100
IC COLLERTOR CURRENT (mA)
FIG.9 Rise Time vs Collector
and Turn On Base Current
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1000
Ic-COLLECTOR CURRENT (mA)
Ic-COLLECTOR CURRENT (mA)
500
MMBT2907AT
SOT-523 Outline Dimensions (SC-75)
Unit:mm
SC-75
A
B
T OP V IE W
C
D
E
G
H
K
J
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L
M
Dim
A
B
C
D
E
G
H
J
K
L
M
Min
0.30
0.70
1.45
0.15
0.80
1.40
0.00
0.70
0.37
0.10
Max
0.50
0.90
1.75
0.50
0.40
1.00
1.80
0.10
1.00
0.48
0.25
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