NTE NTE123AP Silicon npn transistor audio amplifier, switch (compl to nte159) Datasheet

NTE123AP
Silicon NPN Transistor
Audio Amplifier, Switch
(Compl to NTE159)
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Emitter–Base Voltage, VEB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA
Total Device Dissipation (TA = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C
Total Device Dissipation (TC = 25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W
Derate Above 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0mW/°C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –55° to +150°C
Thermal Resistance, Junction to Case, RθJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125°C/W
Thermal Resistance, Junction to Ambient, RθJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 357°C/W
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V(BR)CEO IC = 1mA, IB = 0, Note 1
40
–
–
V
Collector–Base Breakdown Voltage
V(BR)CBO IC = 0.1mA, IE = 0
60
–
–
V
Emitter–Base Breakdown Voltage
V(BR)EBO IE = 0.1mA, IC = 0
6
–
–
V
Collector Cutoff Current
ICEV
VCE = 35V, VEB(off) = 0.4V
–
–
0.1
µA
Base Cutoff Current
IBEV
VCE = 35V, VEB(off) = 0.4V
–
–
0.1
µA
hFE
VCE = 1V, IC = 0.1mA
20
–
–
VCE = 1V, IC = 1mA
40
–
–
VCE = 1V, IC = 10mA
80
–
–
VCE = 1V, IC = 150mA
100
–
300
VCE = 1V, IC = 500mA
40
–
–
ON Characteristics (Note 1)
DC Current Gain
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
IC = 150mA, IB = 15mA
–
–
0.4
V
IC = 500mA, IB = 50mA
–
–
0.75
V
IC = 150mA, IB = 15mA
0.75
–
0.95
V
IC = 500mA, IB = 50mA
–
–
1.2
V
250
–
–
MHz
ON Characteristics (Note 1) (Cont’d)
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
VCE(sat)
VBE(sat)
Small–Signal Characteristics
Current Gain–Bandwidth Product
fT
IC = 20mA, VCE = 10V, f = 100MHz
Collector–Base Capacitance
Ccb
VCB = 5V, IE = 0, f = 100kHz
–
–
6.5
pF
Emitter–Base Capacitance
Ceb
VCB = 0.5V, IC = 0, f = 100kHz
–
–
30
pF
Input Impedance
hie
IC = 1mA, VCE = 10V, f = 1kHz
1.0
–
15
kΩ
Voltage Feedback Ratio
hre
IC = 1mA, VCE = 10V, f = 1kHz
0.1
–
8.0
x 10–6
Small–Signal Current Gain
hfe
IC = 1mA, VCE = 10V, f = 1kHz
40
–
500
Output Admittance
hoe
IC = 1mA, VCE = 10V, f = 1kHz
1.0
–
30
µmhos
VCC = 30V, VEB(off) = 2V,
IC = 150mA, IB1 = 15mA
–
–
15
ns
–
–
20
ns
VCC = 30V, IC = 150mA,
IB1 = IB2 = 15mA
–
–
225
ns
–
–
30
ns
Switching Characteristics
Delay Time
td
Rise Time
tr
Storage Time
ts
Fall Time
tf
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
.135 (3.45) Min
.210
(5.33)
Max
Seating Plane
.021 (.445) Dia Max
.500
(12.7)
Min
E B C
.100 (2.54)
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
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