MACOM MA4L Silicon pin limiter diode Datasheet

Silicon PIN Limiter Diodes
MA4L Series
V 5.0
5
Absolute Maximum Ratings1
Features
• Lower Insertion Loss and Noise Figure
• Higher Peak and Average Operating Power
• Various P1dB Compression Powers
• Lower Flat Leakage Power
• Reliable Silicon Nitride Passivation
Description
M/A-COM produces a series of small and
medium I-region length silicon PIN diodes
specifically designed for high signal limiter
applications. Each of these devices provides
circuit designers with lower insertion loss at
zero bias, faster response and recovery times,
and lower flat leakage power. This series of
diode is available as passivated chips
(ODS 132 or ODS 134) as well as hermetic
surface mount and cylindrical ceramic
packages. Consult factory for specific package
style availability.
@ TA = +25°C ( Unless otherwise specified )
Parameter
Absolute Maximum
Forward Current
100 mA
Operating Temperature
-55°C to +125°C
Storage Temperature
-55°C to +150°C
Junction Temperature
+175°C
RF Peak Incident Power
Per Performance Table
RF C.W. Incident Power
Per Performance Table
Mounting Temperature
+320°C for 10 sec.
Notes:
1.
Exceeding these limits may cause permanent damage.
A Square
Anode
Applications
The MA4L Series of PIN limiter diodes are
designed for use in passive limiter control
circuits to protect sensitive receiver components
such as low noise amplifiers ( LNA ), detectors,
and mixers covering the 10MHz to 18GHz
frequency band.
.007” +/- .001
(0.18 mm +/- .02)
ODS
Dimension
Mils
134
A
13 +/- 2.0
132
A
20 +/- 2.0
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
mm
0.33 +/- 0.05
0.51 +/- 0.05
1
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
MA4L Series
V 5.0
Un-Packaged Die Electrical Specifications at +25°C
Nominal Characteristics
Part Number
Minimum
Reverse
Voltage
VR
Maximum
Reverse
Voltage
VR
Minimum
Cj0V
pF
Maximum
Cj0V
pF
MA4L011-134
MA4L021-134
MA4L022-134
MA4L031-134
MA4L032-134
MA4L062-134
MA4L101-134
MA4L401-132
20
20
20
30
30
65
100
250
35
35
35
50
50
75
0.13
0.13
0.13
0.13
0.13
0.07
0.20
0.20
0.20
0.20
0.20
0.15
0.15
0.30
Maximum1
RS 10mA
Ohms
Carrier
Lifetime
@
10mA
nS
I-Region
Thickness
µM
Contact
Diameter
mils
Thermal2
Resistance
°C/W
2.00
2.00
2.00
2.50
2.50
2.50
2.00
1.20
15
15
15
20
20
15
90
800
2
2
2
3
3
4
13
25
1.00
1.00
1.00
1.50
1.50
1.50
3.50
4.50
200
200
200
150
150
150
30
25
Nominal High Signal Performance @ +25º C
Part Number
Incident3
Peak Power
For 1dB
Limiting @
9.4GHz
dBm
Incident3
Peak Power
For 10dB
Limiting @
9.4GHz
dBm
Incident3
Peak Power
For 20dB
Limiting @
9.4GHz
dBm
Recovery3
Time, (3dB)
@ 50W Peak
Power
Maximum3
Incident Peak
Power
Maximum4
CW Input
Power
nS
Watts
Watts
MA4L011-134
7
25
40
10
100
2
MA4L021-134
10
30
43
10
400
4
MA4L022-134
10
30
43
10
200
3
MA4L031-134
16
36
49
20
800
5
MA4L032-134
16
36
49
20
600
3
MA4L062-134
16
36
49
20
600
5
MA4L101-134
19
42
52
10
900
4
MA4L401-132
29
52
65
100
2000
10
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
2
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
MA4L Series
V 5.0
Notes for Specifications and Nominal High Signal Performance Table:
1. Maximum Series Resistance - RS, is measured at 500MHz in the ODS-30 package and is equivalent
to the total diode resistance : Rs = Rj ( Junction Resistance) + Rc ( Ohmic Resistance)
2. Nominal C.W. Thermal Resistance - θTH is measured in ceramic pill package, ODS-30, mounted to
a metal ( infinite ) heatsink. Diode only thermal resistance values are approximately 2 ºC/W lower in
value than the ODS-30 listed package values.
3. Maximum High Signal Performance – Measured using a single shunt diode ( die ) attached
directly to the gold plated RF housing ground with 2 mil thick conductive silver epoxy in a 50Ω,
SMA, connectorized test fixture. Chip anode contact is thermo sonically wire bonded using a
1 mil dia. gold wire onto a 7.2 mil thick Rogers 5880 duroid microstrip trace. A shunt coil
provides the D.C. return. Test Frequency = 9.4 GHz, RF pulse width = 1.0 µS, 0.001 duty cycle.
4. Maximum C.W Incident Power - Measured in a 50 Ω, SMA, connectorized housing @ 4GHz utilizing a
TWT amplifier and the same single diode assembly configuration as stated in Note 3 above.
Die Handling and Mounting Information
Handling: All semiconductor chips should be handled with care in order to avoid damage or contamination
from perspiration, salts, and skin oils. For individual die, the use of plastic tipped tweezers or vacuum pick
up tools is strongly recommended. Bulk handling should ensure that abrasion and mechanical shock are
minimized.
Die Attach: The die have Ti-Pt-Au back and anode metal, with a final gold thickness of 1.0 µm. Die can be
mounted with a gold-tin, eutectic solder preform or conductive silver epoxy. The metal RF and D.C. ground
plane mounting surface must be free of contamination and should have a surface flatness of < +/- 0.002“.
Eutectic Die Attachment Using Hot Gas Die Bounder: An 80/20, gold-tin eutectic solder preform is
recommended with a work surface temperature of 255oC and a tool tip temperature of 220oC. When the hot
gas is applied, the temperature at the tool tip should be approximately 290oC. The chip should not be
exposed to temperatures greater than 320oC for more than 10 seconds.
Eutectic Die Attachment Using Reflow Oven: See Application Note M541, “Bonding and Handling
Procedures for Chip Diode Devices” at www.macom.com. for recommended profile.
Epoxy Die Attachment: A thin, controlled amount of electrically conductive silver epoxy should be applied
at approximately a 1–2 mils thickness to minimize ohmic and thermal resistances. A thin epoxy fillet should
be visible around the perimeter of the chip after placement to ensure full area coverage. Cure conductive
epoxy per manufacturer’s schedule.
Die Bonding: The anode bond pads on these die have a Ti-Pt-Au metallization scheme, with a final gold
thickness of 1.0 µm. Thermosonic wedge wire bonding of 0.001” diameter gold wire is recommended with a
stage temperature of 150oC and a force of 18 to 40 grams. Ultrasonic energy should be adjusted to the
minimum required. Automatic ball bonding can also be used.
See Application Note M541, “Bonding and Handling Procedures for Chip Diode Devices”
for more detailed handling and assembly instructions at www.macom.com.
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
3
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
MA4L Series
V 5.0
Typical High Signal Peak Power Performance for the Single Shunt Limiter Diode
in a 50Ω Test Fixture ( Note 3 )
Typical Peak Power Performance for Single Shunt Limiter Diode in 50 Ohm System
at 9.4 GHz, 1uS Pulse Width, 0.001 Duty
45
MA4L022-134
40
MA4L032-134
35
MA4L101-134
Pout ( dBm )
30
MA4L401-132
25
20
15
10
0 dB Loss
Line
5
10 dB Loss
Line
30 dB Loss
Line
20 dB Loss
Line
0
0
10
20
30
40
50
Pin ( dBm )
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
4
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
MA4L Series
V 5.0
Application Circuits
Typical +60dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20dBm Flat Leakage Limiter Circuit
Transmission Line: 90º @ Fo
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L401-132
MA4L032-134
MA4L101-134
Coil: D.C. Return
Typical +50 dBm Peak Power, 1µS P.W., 0.001% Duty Cycle, +20 dBm Flat Leakage Limiter Circuit
Transmission Line: 90º @ Fo
RF Input
RF Output
MA4L032-134
MA4L022-134
Coil: D.C. Return
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
5
þ
Telephone: 781-564-3100
Silicon PIN Limiter Diodes
MA4L Series
V 5.0
Popular Case Styles and Associated Parasitics ( Table I )
Package Style
Package Type
Cpkg ( pF )
Ls ( nH )
30
Ceramic Pill
0.18
0.60
31
Ceramic Pill
0.18
0.60
32
Ceramic Pill
0.30
0.40
36
Ceramic Pill
0.18
0.60
137
Ceramic Surface Mount with Leads
0.14
0.70
186
Ceramic Surface Mount with Leads
0.18
0.70
0.20
0.70
1056
Ceramic Surface Mount with
Wrap Around Contacts
Part Numbering and Ordering Information
1. The die only P/N’s use either the -132 or -134 suffix (see Electrical Specification Table).
2. The packaged P/N’s use the associated suffix as defined in Table I instead of the die number.
For example, the MA4L032-134 die in the 186 style package becomes: MA4L032-186
Specification Subject to Change Without Notice
M/A-COM Inc.
þ
43 South Avenue, Burlington, MA 01803 USA
6
þ
Telephone: 781-564-3100
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