IRG8B08N120KDPbF IRG8P08N120KDPbF IRG8P08N120KD-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1200V C IC = 8A, TC =100°C tSC 10µs, TJ(max) = 150°C G VCE(ON) typ. = 1.7V @ IC = 5A G E Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding C E G G Gate G TO-247AC IRG8P08N120KDPbF TO-220AB IRG8B08N120KDPbF n-channel CE E TO-247AD IRG8P08N120KD-EPbF C Collector Features C E Emitter Benefits Benchmark Low VCE(ON) High Efficiency in a Motor Drive Applications 10μs Short Circuit SOA Increases margin for short circuit protection scheme Positive VCE(ON) Temperature Coefficient Excellent Current Sharing in Parallel Operation Square RBSOA and high ILM- rating Rugged Transient Performance Lead-Free, RoHS compliant Environmentally friendly Base part number Package Type IRG8P08N120KDPbF IRG8P08N120KD-EPbF IRG8B08N120KDPbF TO-247AC TO-247AD TO-220AB Standard Pack Form Quantity Tube 25 Tube 25 Tube 50 Orderable Part Number IRG8P08N120KDPbF IRG8P08N120KD-EPbF IRG8B08N120KDPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C VGE Parameter Collector-to-Emitter Voltage Continuous Collector Current (Silicon Limited) Continuous Collector Current Pulse Collector Current (see fig. 2) Clamped Inductive Load Current (see fig. 3) Diode Continuous Forward Current Diode Continuous Forward Current Continuous Gate-to-Emitter Voltage IFM Diode Maximum Forward Current PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 1200 15 8 15 20 11 6 ±30 20 89 36 -40 to +150 Units V A V W C 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Thermal Resistance RJC RJC RJC RJC RCS RJA RCS RJA 1 (IGBT) (Diode) (IGBT) (Diode) Parameter Thermal Resistance Junction-to-Case-(each IGBT) TO-220AB Thermal Resistance Junction-to-Case-(each Diode) TO-220AB Thermal Resistance Junction-to-Case-(each IGBT) TO-247 Thermal Resistance Junction-to-Case-(each Diode) TO-247 Thermal Resistance, Case-to-Sink (flat, greased surface)TO-220AB Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-220AB Thermal Resistance, Case-to-Sink (flat, greased surface)TO-247 Thermal Resistance, Junction-to-Ambient (typical socket mount)TO-247 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Typ. ––– ––– ––– ––– 0.50 ––– 0.24 ––– Max. 1.3 2.6 1.4 2.6 ––– 62 ––– 40 Units °C/W December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) V(BR)CES V(BR)CES/TJ Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Min. 1200 — Typ. — 1.2 — 1.7 — 2.1 Gate Threshold Voltage 5.0 — VGE(th) Threshold Voltage Temperature Coeff. — -14 VGE(th)/TJ gfe Forward Transconductance — 2.9 — 1.0 ICES Collector-to-Emitter Leakage Current — 1.0 Gate-to-Emitter Leakage Current IGES — — — 2.3 VF Diode Forward Voltage Drop — 2.5 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Max. — — Units Conditions V VGE = 0V, IC = 250µA V/°C VGE = 0V, IC = 1mA (25°C-150°C) 2.0 IC = 5A, VGE = 15V, TJ = 25°C V — IC = 5A, VGE = 15V, TJ = 150°C 6.5 V VCE = VGE, IC = 200µA — mV/°C VCE = VGE, IC = 200µA(25°C-150°C) — S VCE = 50V, IC = 5A, PW = 20µs 35 µA VGE = 0V, VCE = 1200V — mA VGE = 0V, VCE = 1200V, TJ = 150°C ±100 nA VGE = ±30V 2.7 IF = 5A V — IF = 5A, TJ = 150°C VCE(on) Collector-to-Emitter Saturation Voltage Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Parameter Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 10 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 240 50 11 — — — µJ ns A Min. — — — — — — — — — — — Typ. 30 1.1 20 0.3 0.3 0.6 20 20 160 240 0.5 — — — — — — — — — 0.5 1.0 20 20 300 290 720 30 15 Max Units Conditions 45 IC = 5A nC VGE = 15V 1.7 VCC = 600V — — — mJ IC = 5A, VCC = 600V, VGE=15V — RG = 47, TJ = 25°C — Energy losses include tail & diode — ns reverse recovery — — — — — — — — — — — — mJ ns pF FULL SQUARE IC = 5A, VCC = 600V, VGE=15V RG = 47, TJ = 150°C Energy losses include tail & diode reverse recovery VGE = 0V VCC = 30V f = 1.0Mhz TJ = 150°C, IC = 20A VCC = 960V, Vp ≤ 1200V VGE = +20V to 0V TJ = 150°C,VCC = 600V, Vp ≤ 1200V VGE = +15V to 0V TJ = 150°C VCC = 600V, IF = 5A VGE = 15V, Rg = 47 Notes: VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature. Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF 16 For both: Duty cycle : 50% Tj = 150°C Tcase = 100°C Gate drive as specified Power Dissipation = 36W 14 Load Current ( A ) 12 10 8 Square Wave: 6 VCC 4 I 2 Diode as specified 0 0.1 1 10 100 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 10 1 IC (A) IC (A) 10µsec 100µsec 10 1msec 0.1 DC Tc = 25°C Tj = 150°C Single Pulse 1 0.01 1 10 100 1000 10 10000 100 10000 VCE (V) VCE (V) Fig. 3 - Reverse Bias SOA TJ = 150°C; VGE = 20V Fig. 2 - Forward SOA TC = 25°C; TJ ≤ 150°C; VGE = 15V 100 10 10 ICE (A) ICE (A) 100 0.1 0.1 0 2 4 6 8 10 V CE (V) Fig. 4 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 20µs www.irf.com Tc = -40°C Tc = 25°C Tc = 150°C 1 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 1.0 3 1000 © 2014 International Rectifier 0 2 4 6 8 V CE (V) Fig. 5 - Typ. IGBT Saturation Voltage VGE = 15V; tp = 20µs Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF 16 VGE, Gate-to-Emitter Voltage (V) 100 ICE (A) 10 1 TJ = -40°C TJ = 25°C TJ = 150°C 14 VCES = 600V VCES = 400V 12 10 8 6 4 2 0 0.1 4 6 8 10 12 14 0 16 5 10 20 25 30 35 V GE (V) Q G, Total Gate Charge (nC) Fig. 6 - Typ. Transfer Characteristics VCE = 50V; tp = 20µs Fig. 7 - Typical Gate Charge vs. VGE ICE = 5A 1000 1.2 tdOFF EOFF @ Tj = 150°C EON @ Tj = 150°C 1.0 Swiching Time (ns) ERR @ Tj = 150°C 0.8 Energy (mJ) 15 EOFF @ Tj = 25°C 0.6 EON @ Tj = 25°C ERR @ Tj = 25°C 0.4 tF 100 tdON tR 10 0.2 1 0.0 0 1 2 3 4 5 6 7 8 9 4 6 8 10 IC (A) IC (A) Fig. 9 - Typ. Switching Time vs. IC TJ = 150°C; VCE = 600V, RG = 47; VGE = 15V Fig. 8 - Typ. Energy Loss vs. IC VCE = 600V, RG = 47; VGE = 15V 1.2 2 10 10000 EON @ Tj = 150°C EOFF @ Tj = 150°C ERR @ Tj = 150°C 1000 0.6 Swiching Time (ns) Energy (mJ) 0.9 EON @ Tj = 25°C EOFF @ Tj = 25°C ERR @ Tj = 25°C tF 100 tdON tR 10 0.3 1 0.0 40 60 80 100 120 140 160 180 200 220 Rg () Fig. 10 - Typ. Energy Loss vs. RG VCE = 600V, ICE = 5A; VGE = 15V 4 tdOFF www.irf.com © 2014 International Rectifier 40 60 80 100 120 140 160 180 200 220 RG ( ) Fig. 11 - Typ. Switching Time vs. RG TJ = 150°C; VCE = 600V, ICE = 5A; VGE = 15V Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF 500 11.0 VCC = 600V 10.5 RG = 47 RG = 100 RG = 148 R G = 47 Tj = 150°C VGE = 15V 400 Energy (µJ) IRR (A) IF = 5A 10.0 R G = R G = 148 9.5 RG = 220 300 200 R G = 220 100 9.0 0 8.5 350 400 450 500 550 0 600 2 4 6 8 10 IF (A) diF /dt (A/µs) Fig. 12 - Fig. 12 - Typ. IRR vs. di/dt Fig. 13 - Typ. Diode ERR vs. IF TJ = 150°C 100 IF (A) 10 -40°C 25°C 150°C 1 0.1 0.0 1.0 2.0 3.0 4.0 5.0 6.0 V F (V) Fig. 14 - Typ. Diode Forward Voltage Drop Characteristics 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.05 0.1 0.10 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 3 2 3 4 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.12192 0.000058 0.48468 0.000092 0.51027 0.001541 0.28298 0.011665 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 15 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-247 Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.05 0.1 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 3 4 4 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.07490 0.000029 1.19683 0.000184 0.93086 0.002329 0.39894 0.01613 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 16 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-247 6 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.05 0.1 0.10 J 0.02 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 3 2 4 3 1E-005 0.0001 0.000014 0.51536 0.000089 0.50866 0.001767 C 0.24474 0.01039 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 i (sec) 0.03109 4 Ci= iRi Ci= iRi 0.01 Ri (°C/W) R4 R4 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 17 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT) TO-220AB Thermal Response ( ZthJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 J 0.01 R1 R1 J 1 R2 R2 R3 R3 R4 R4 C 2 1 2 3 4 3 Ci= iRi Ci= iRi 0.01 1E-005 0.0001 i (sec) 0.03331 0.000013 1.22958 0.000240 0.94175 0.002513 0.39481 0.015930 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 4 C Ri (°C/W) 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 18 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE) TO-220AB 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit (Board Stray Inductance 180nH) C force 100K D1 22K C sense G force DUT 0.0075µF E sense E force Fig.C.T.5 - BVCES Filter Circuit 8 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF 40 800 35 600 30 500 25 400 Vce (V) VCE 300 20 ICE 15 200 10 100 5 0 0 -100 -10.0 -5.0 0.0 Ice (A) 700 -5 5.0 10.0 15.0 20.0 Time (uS) Fig. WF1 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 135H 57 ASSEMBLY LOT CODE DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 035H 57 ASSEM B LY LO T C O D E D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014 IRG8B08N120KDPbF/IRG8P08N120KDPbF/IRG8P08N120KD-EPbF Qualification Information† Industrial† Qualification Level (per JEDEC JESD47F) †† TO-220 TO-247AC Moisture Sensitivity Level N/A TO-247AD Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date Comments 12/12/2014 Added TO-220 package in the datasheet. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 13 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback December 12, 2014