PHILIPS BC109C Npn general purpose transistor Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
M3D125
BC107; BC108; BC109
NPN general purpose transistors
Product specification
Supersedes data of 1997 Jun 03
File under Discrete Semiconductors, SC04
1997 Sep 03
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
FEATURES
PINNING
• Low current (max. 100 mA)
PIN
• Low voltage (max. 45 V).
APPLICATIONS
DESCRIPTION
1
emitter
2
base
3
collector, connected to the case
• General purpose switching and amplification.
DESCRIPTION
3
handbook, halfpage
1
2
NPN transistor in a TO-18; SOT18 metal package.
PNP complement: BC177.
2
3
MAM264
Fig.1
1
Simplified outline (TO-18; SOT18)
and symbol.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
PARAMETER
collector-base voltage
CONDITIONS
UNIT
BC107
−
50
V
BC108; BC109
−
30
V
BC107
−
45
V
BC108; BC109
−
20
V
−
200
mA
−
300
mW
BC107
110
450
BC108
110
800
BC109
200
800
100
−
collector-emitter voltage
open base
peak collector current
Ptot
total power dissipation
Tamb ≤ 25 °C
hFE
DC current gain
IC = 2 mA; VCE = 5 V
transition frequency
1997 Sep 03
MAX.
open emitter
ICM
fT
MIN.
IC = 10 mA; VCE = 5 V; f = 100 MHz
2
MHz
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
collector-base voltage
CONDITIONS
MIN.
MAX.
UNIT
open emitter
BC107
−
50
V
BC108; BC109
−
30
V
BC107
−
45
V
BC108; BC109
−
20
V
BC107
−
6
V
BC108; BC109
−
5
V
collector-emitter voltage
emitter-base voltage
open base
open collector
IC
collector current (DC)
−
100
mA
ICM
peak collector current
−
200
mA
IBM
peak base current
−
200
mA
Ptot
total power dissipation
−
300
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Tamb
operating ambient temperature
−65
+150
°C
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Rth j-c
thermal resistance from junction to case
CONDITIONS
note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
1997 Sep 03
3
VALUE
UNIT
0.5
K/mW
0.2
K/mW
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
−
−
15
nA
IE = 0; VCB = 20 V; Tj = 150 °C
−
−
15
µA
IC = 0; VEB = 5 V
−
−
50
nA
BC107A; BC108A
−
90
−
BC107B; BC108B; BC109B
40
150
−
BC108C; BC109C
100
270
−
BC107A; BC108A
110
180
220
BC107B; BC108B; BC109B
200
290
450
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
IC = 10 µA; VCE = 5 V
DC current gain
IC = 2 mA; VCE = 5 V
BC108C; BC109C
VCEsat
TYP.
IE = 0; VCB = 20 V
ICBO
hFE
MIN.
420
520
800
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
90
250
mV
IC = 100 mA; IB = 5 mA
−
200
600
mV
IC = 10 mA; IB = 0.5 mA; note 1
−
700
−
mV
IC = 100 mA; IB = 5 mA; note 1
−
900
−
mV
IC = 2 mA; VCE = 5 V; note 2
550
620
700
mV
IC = 10 mA; VCE = 5 V; note 2
−
−
770
mV
VBEsat
base-emitter saturation voltage
VBE
base-emitter voltage
Cc
collector capacitance
IE = ie = 0; VCB = 10 V; f = 1 MHz
−
2.5
6
pF
Ce
emitter capacitance
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
9
−
pF
fT
transition frequency
IC = 10 mA; VCB = 5 V; f = 100 MHz
100
−
−
MHz
F
noise figure
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 30 Hz to 15.7 kHz
−
−
4
dB
IC = 200 µA; VCE = 5 V; RS = 2 kΩ;
f = 1 kHz; B = 200 Hz
−
−
10
dB
−
−
4
dB
BC109B; BC109C
F
noise figure
BC107A; BC108A
BC107B; BC108B; BC108C
BC109B; BC109C
Notes
1. VBEsat decreases by about 1.7 mV/K with increasing temperature.
2. VBE decreases by about 2 mV/K with increasing temperature.
1997 Sep 03
4
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
PACKAGE OUTLINE
Metal-can cylindrical single-ended package; 3 leads
SOT18/13
α
j
seating plane
B
w M A M B M
1
b
k
D1
2
3
a
D
A
A
0
5
L
10 mm
scale
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
UNIT
A
a
b
D
D1
j
k
L
w
α
mm
5.31
4.74
2.54
0.47
0.41
5.45
5.30
4.70
4.55
1.03
0.94
1.1
0.9
15.0
12.7
0.40
45°
REFERENCES
OUTLINE
VERSION
IEC
JEDEC
SOT18/13
B11/C7 type 3
TO-18
1997 Sep 03
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-04-18
5
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Sep 03
6
Philips Semiconductors
Product specification
NPN general purpose transistors
BC107; BC108; BC109
NOTES
1997 Sep 03
7
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© Philips Electronics N.V. 1997
SCA55
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117047/00/04/pp8
Date of release: 1997 Sep 03
Document order number:
9397 750 02817
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