DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BC107; BC108; BC109 NPN general purpose transistors Product specification Supersedes data of 1997 Jun 03 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 FEATURES PINNING • Low current (max. 100 mA) PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to the case • General purpose switching and amplification. DESCRIPTION 3 handbook, halfpage 1 2 NPN transistor in a TO-18; SOT18 metal package. PNP complement: BC177. 2 3 MAM264 Fig.1 1 Simplified outline (TO-18; SOT18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO PARAMETER collector-base voltage CONDITIONS UNIT BC107 − 50 V BC108; BC109 − 30 V BC107 − 45 V BC108; BC109 − 20 V − 200 mA − 300 mW BC107 110 450 BC108 110 800 BC109 200 800 100 − collector-emitter voltage open base peak collector current Ptot total power dissipation Tamb ≤ 25 °C hFE DC current gain IC = 2 mA; VCE = 5 V transition frequency 1997 Sep 03 MAX. open emitter ICM fT MIN. IC = 10 mA; VCE = 5 V; f = 100 MHz 2 MHz Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO PARAMETER collector-base voltage CONDITIONS MIN. MAX. UNIT open emitter BC107 − 50 V BC108; BC109 − 30 V BC107 − 45 V BC108; BC109 − 20 V BC107 − 6 V BC108; BC109 − 5 V collector-emitter voltage emitter-base voltage open base open collector IC collector current (DC) − 100 mA ICM peak collector current − 200 mA IBM peak base current − 200 mA Ptot total power dissipation − 300 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 175 °C Tamb operating ambient temperature −65 +150 °C Tamb ≤ 25 °C THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-a thermal resistance from junction to ambient Rth j-c thermal resistance from junction to case CONDITIONS note 1 Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Sep 03 3 VALUE UNIT 0.5 K/mW 0.2 K/mW Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MAX. UNIT − − 15 nA IE = 0; VCB = 20 V; Tj = 150 °C − − 15 µA IC = 0; VEB = 5 V − − 50 nA BC107A; BC108A − 90 − BC107B; BC108B; BC109B 40 150 − BC108C; BC109C 100 270 − BC107A; BC108A 110 180 220 BC107B; BC108B; BC109B 200 290 450 collector cut-off current IEBO emitter cut-off current hFE DC current gain IC = 10 µA; VCE = 5 V DC current gain IC = 2 mA; VCE = 5 V BC108C; BC109C VCEsat TYP. IE = 0; VCB = 20 V ICBO hFE MIN. 420 520 800 collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − 90 250 mV IC = 100 mA; IB = 5 mA − 200 600 mV IC = 10 mA; IB = 0.5 mA; note 1 − 700 − mV IC = 100 mA; IB = 5 mA; note 1 − 900 − mV IC = 2 mA; VCE = 5 V; note 2 550 620 700 mV IC = 10 mA; VCE = 5 V; note 2 − − 770 mV VBEsat base-emitter saturation voltage VBE base-emitter voltage Cc collector capacitance IE = ie = 0; VCB = 10 V; f = 1 MHz − 2.5 6 pF Ce emitter capacitance IC = ic = 0; VEB = 0.5 V; f = 1 MHz − 9 − pF fT transition frequency IC = 10 mA; VCB = 5 V; f = 100 MHz 100 − − MHz F noise figure IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 30 Hz to 15.7 kHz − − 4 dB IC = 200 µA; VCE = 5 V; RS = 2 kΩ; f = 1 kHz; B = 200 Hz − − 10 dB − − 4 dB BC109B; BC109C F noise figure BC107A; BC108A BC107B; BC108B; BC108C BC109B; BC109C Notes 1. VBEsat decreases by about 1.7 mV/K with increasing temperature. 2. VBE decreases by about 2 mV/K with increasing temperature. 1997 Sep 03 4 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 PACKAGE OUTLINE Metal-can cylindrical single-ended package; 3 leads SOT18/13 α j seating plane B w M A M B M 1 b k D1 2 3 a D A A 0 5 L 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A a b D D1 j k L w α mm 5.31 4.74 2.54 0.47 0.41 5.45 5.30 4.70 4.55 1.03 0.94 1.1 0.9 15.0 12.7 0.40 45° REFERENCES OUTLINE VERSION IEC JEDEC SOT18/13 B11/C7 type 3 TO-18 1997 Sep 03 EIAJ EUROPEAN PROJECTION ISSUE DATE 97-04-18 5 Philips Semiconductors Product specification NPN general purpose transistors BC107; BC108; BC109 DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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