UTC BCP68-XX-AA3-R Npn medium power transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
BCP68
NPN SILICON TRANSISTOR
NPN MEDIUM POWER
TRANSISTOR
„
FEATURES
* High current (max. 1 A)
* Low voltage (max. 20 V).
* Complementary to UTC BCP69
„
1
SOT-223
APPLICATIONS
* General purpose switching and amplification under high current
conditions.
Lead-free:
BCP68L
Halogen-free: BCP68G
„
ORDERING INFORMATION
Normal
BCP68-xx-AA3-R
Ordering Number
Lead Free Plating
BCP68L-xx-AA3-R
Halogen Free
BCP68G-xx-AA3-R
www.unisonic.com.tw
Copyright © 2009 Unisonic Technologies Co., Ltd
Package
SOT-223
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
1 of 3
QW-R207-008,D
BCP68
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C , unless otherwise specified)
PARAMETER
Collector-Base Voltage (Open Emitter)
Collector-Emitter Voltage (Open Base)
Emitter-Base Voltage (Open Collector)
SYMBOL
RATINGS
UNIT
VCBO
32
V
VCEO
20
V
VEBO
5
V
DC
IC
1
A
Collector Current
2
A
Peak
ICM
Peak Base Current
IBM
200
mA
Total Power Dissipation (Ta ≤ 25℃)
PD
1.35
W
Junction Temperature
TJ
150
℃
Operating Temperature
TOPR
-45 ~ +150
℃
Storage Temperature
TSTG
-65 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
THERMAL DATA
PARAMETER
Thermal Resistance From Junction To Ambient
„
RATINGS
91
UNIT
℃/W
ELECTRICAL CHARACTERISTICS (TJ = 25℃, unless otherwise specified.)
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Capacitance
Transition Frequency
DC Current Gain Ratio of the
Complementary Pairs
„
SYMBOL
θJA
SYMBOL
TEST CONDITIONS
VCE(SAT) IC = 1A, IB =100mA
IC = 5mA, VCE = 10V
VBE
IC = 1A, VCE = 1V
IE = 0, VCB = 25V
ICBO
IE = 0, VCB = 25V, TJ = 150℃
IEBO
IC = 0, VEB = 5V
IC = 5mA, VCE = 10V
hFE
IC = 500mA, VCE = 1V
IC = 1A, VCE = 1V
CC
IE = ie = 0, VCB = 5V, f = 1MHz
fT
IC = -10mA, VCE = -5V, f = 100MHz
hFE1
|IC| = 0.5A, |VCE| = 1V
hFE2
MIN
TYP MAX UNIT
500 mV
620
mV
1
V
100
nA
10
µA
100
nA
50
85
60
375
48
pF
MHz
40
1.6
CLASSIFICATION OF hFE
RANK
RANGE
16
100~250
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
25
160~375
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QW-R207-008,D
BCP68
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTIC
„
DC Current Gain (Typical Values)
300
VCE = 1V
250
hFE
200
150
100
50
0
-10-1
1
10
102
103
104
IC (mA)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 3
QW-R207-008,D
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