DTC124EM / DTC124EE / DTC124EUA / DTC124EKA / DTC124ESA Transistor 100mA / 50V Digital transistors (with built-in resistors) DTC124EM / DTC124EE / DTC124EUA / DTC124EKA / DTC124ESA zApplications Inverter, Interface, Driver zExternal dimensions (Unit : mm) DTC124EM 0.2 1.2 0.32 zFeatures 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost completely eliminating parasitic effects. 3) Only the on / off conditions need to be set for operation, making the device design easy. 0.8 1.2 (3) 0.2 (1)(2) 0.22 0.4 0.4 0.13 0.5 (1) IN (2) GND (3) OUT 0.8 ROHM : VMT3 Abbreviated symbol : 25 DTC124EE 0.7 1.6 0.55 0.3 (2) 1.6 0.8 (3) 0.2 0.15 0.5 0.5 zStructure NPN epitaxial planar silicon transistor (Resistor built-in type) ROHM : EMT3 Abbreviated symbol : 25 DTC124EUA zPackaging specifications 2.0 0.9 0.2 SPT Taping Taping Code T2L TL T106 T146 TP Basic ordering unit (pieces) 8000 3000 3000 3000 5000 − − − − − − − − − − − DTC124EKA − − − DTC124ESA − − − ROHM : UMT3 EIAJ : SC-70 0.15 1.3 Abbreviated symbol : 25 DTC124EKA (1) GND (2) IN (3) OUT 1.1 2.9 0.4 0.8 (3) − − 1.6 2.8 − DTC124EUA (1) (2) 0.65 0.65 0.1Min. SMT3 Taping (2) zEquivalent circuit (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 0.3Min. UMT3 Taping 2.1 EMT3 Taping 1.25 VMT3 Packaging type DTC124EE 0.7 (3) Package DTC124EM (1) GND (2) IN (3) OUT 1.0 0.3 Type 0.1Min. (1) 0.2 (1) GND (2) IN (3) OUT Abbreviated symbol : 25 OUT R1 DTC124ESA 4.0 2.0 3.0 IN 3Min. R2 (15Min.) GND 0.45 OUT IN 2.5 GND 0.5 0.45 (1) GND (2) OUT (3) IN 5.0 ROHM : SPT EIAJ : SC-72 R1=R2=22kΩ (1) (2) (3) Abbreviated symbol : C124ES Rev.A 1/2 DTC124EM / DTC124EE / DTC124EUA / DTC124EKA / DTC124ESA Transistor zAbsolute maximum ratings (Ta=25°C) Parameter Limits Symbol Unit DTC124EM DTC124EE DTC124EUA DTC124EKA DTC124ESA Supply voltage VCC 50 V Input voltage VIN −10 to +40 V IO 30 IC(Max.) 100 Output current mA Power dissipation Pd Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 150 200 mW 300 zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. VI(off) − − 0.5 VI(on) 3 − − VO(on) − 0.1 0.3 V II − − 0.36 mA IO(off) − − 0.5 µA VCC=50V, VI=0V GI 56 − − − VO=5V, IO=5mA Input resistance R1 15.4 22 28.6 kΩ − Resistance ratio R2/R1 0.8 1 1.2 − − − 250 − MHz Input voltage Output voltage Input current Output current DC current gain fT ∗ Transition frequency Unit V Conditions VCC=5V, IO=100µA VO=0.2V, IO=5mA IO/II=10mA/0.5mA VI=5V VCE=10V, IE=−5mA, f=100MHz ∗ Characteristics of built-in transistor zElectrical characteristic curves 10m 5m VO=0.2V OUTPUT CURRENT : Io (A) INPUT VOLTAGE : VI(on) (V) 50 20 10 Ta=−40°C 25°C 100°C 5 2 1 500m 200m 100m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.1 Input voltage vs. output current (ON characteristics) 1 1k VCC=5V 2m 1m 500µ VO=5V 500 DC CURRENT GAIN : GI 100 Ta=100°C 25°C −40°C 200µ 100µ 50µ 20µ 10µ Ta=100°C 25°C −40°C 200 100 50 20 10 5 5µ 2µ 1µ 0 2 0.5 1.0 1.5 2.0 2.5 3.0 INPUT VOLTAGE : VI(off) (V) Fig.2 Output current vs. input voltage (OFF characteristics) 1 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.3 DC current gain vs. output current lO/lI=20 OUTPUT VOLTAGE : VO(on) (V) 500m 200m Ta=100°C 25°C −40°C 100m 50m 20m 10m 5m 2m 1m 100µ 200µ 500µ 1m 2m 5m 10m 20m 50m 100m OUTPUT CURRENT : IO (A) Fig.4 Output voltage vs. output current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1