NTD4858N Power MOSFET 25 V, 73 A, Single N−Channel, DPAK/IPAK Features • • • • • Trench Technology Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 6.2 mW @ 10 V 25 V 73 A 9.3 mW @ 4.5 V Applications • VCORE Applications • DC−DC Converters • High/Low Side Switching D N−CHANNEL MOSFET G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Symbol Value Unit Drain−to−Source Voltage VDSS 25 V Gate−to−Source Voltage VGS ±20 V ID 14 A Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C Power Dissipation RqJA (Note 2) TA = 85°C Steady State PD ID TA = 85°C 2.0 W A 11.2 8.7 TA = 25°C PD 1.3 W Continuous Drain Current RqJC (Note 1) TC = 25°C ID 73 A Power Dissipation RqJC (Note 1) TC = 25°C PD 54.5 W TA = 25°C IDM 146 A TA = 25°C IDmaxPkg 45 A TJ, TSTG −55 to +175 °C IS 45 A Pulsed Drain Current TC = 85°C tp=10ms Current Limited by Package Operating Junction and Storage Temperature Source Current (Body Diode) 1 2 dV/dt 6 V/ns Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V, IL = 15 Apk, L = 1.0 mH, RG = 25 W) EAS 112.5 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 2 2 3 3 IPAK IPAK CASE 369D CASE 369AD (Straight Lead) (Straight Lead DPAK) STYLE 2 STYLE 2 1 3 DPAK CASE 369AA (Bent Lead) STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 56 Drain to Source dV/dt Lead Temperature for Soldering Purposes (1/8” from case for 10 s) 4 10.9 4 Drain 4 Drain 4 Drain AYWW 48 58NG TA = 25°C 4 4 AYWW 48 58NG Continuous Drain Current RqJA (Note 1) S AYWW 48 58NG Parameter 2 1 2 3 1 Drain 3 Gate Source Gate Drain Source 1 2 3 Gate Drain Source A Y WW 4858N G = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. © Semiconductor Components Industries, LLC, 2014 June, 2014 − Rev. 3 1 Publication Order Number: NTD4858N/D NTD4858N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Unit Junction−to−Case (Drain) Parameter RqJC 2.75 °C/W Junction−to−TAB (Drain) RqJC−TAB 3.5 Junction−to−Ambient – Steady State (Note 1) RqJA 73.5 Junction−to−Ambient – Steady State (Note 2) RqJA 116 1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 25 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 22 VGS = 0 V, VDS = 20 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) Forward Transconductance gFS 1.45 5.3 mV/°C VGS = 10 V ID = 30 A 5.2 6.2 VGS = 4.5 V ID = 30 A 7.3 9.3 VDS = 1.5 V, ID = 15 A 55 mW S CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 200 Total Gate Charge QG(TOT) 12.8 Threshold Gate Charge QG(TH) Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge QGS 1563 VGS = 0 V, f = 1.0 MHz, VDS = 12 V pF 19.2 1.3 VGS = 4.5 V, VDS = 15 V, ID = 30 A QGD QG(TOT) 405 4.7 nC 5.2 VGS = 10 V, VDS = 15 V, ID = 30 A 25.7 nC SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 12.6 VGS = 4.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 20.2 16.4 ns 5.1 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTD4858N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 7.7 VGS = 11.5 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 17.3 ns 23.8 2.8 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.87 TJ = 125°C 0.73 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 30 A 1.2 V 11.6 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A 7.8 ns 3.7 QRR 3.0 nC Source Inductance LS 2.49 nH Drain Inductance, DPAK LD 0.0164 Drain Inductance, IPAK LD Gate Inductance LG 3.46 Gate Resistance RG 0.7 PACKAGE PARASITIC VALUES TA = 25°C 1.88 W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 3 NTD4858N TYPICAL PERFORMANCE CURVES 90 90 10 V TJ = 25°C 4V ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 80 3.6 V 70 60 3.4 V 50 40 3.2 V 30 20 3.0 V 10 2.8 V 0 1 2 3 4 40 30 TJ = 125°C 20 TJ = 25°C 10 TJ = −55°C 1 2 3 4 5 Figure 2. Transfer Characteristics 0.030 0.025 0.020 0.015 0.010 0.005 3 4 5 6 7 8 9 10 11 0.010 TJ = 25°C 0.009 VGS = 4.5 V 0.008 0.007 0.006 VGS = 11.5 V 0.005 0.004 0.003 0.002 10 20 30 40 50 60 70 80 90 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID, DRAIN CURRENT (AMPS) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 10000 VGS = 0 V ID = 30 A VGS = 10 V 1000 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 50 Figure 1. On−Region Characteristics 0.035 1.6 60 VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) ID = 30 A TJ = 25°C 2 70 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.040 0 VDS ≥ 10 V 80 0 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 3.8 V 1.4 1.2 1.0 TJ = 125°C 100 10 1 0.8 0.6 −50 TJ = 150°C −25 0 25 50 75 100 125 150 175 0.1 TJ = 25°C 5 10 15 20 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Drain Voltage http://onsemi.com 4 25 NTD4858N TYPICAL PERFORMANCE CURVES C, CAPACITANCE (pF) VGS = 0 V Ciss 1800 VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) 2000 TJ = 25°C 1600 1400 1200 1000 Coss 800 600 400 200 0 0 Crss 2.5 5 7.5 10 12.5 15 17.5 20 DRAIN−TO−SOURCE VOLTAGE (VOLTS) 10 QT 8 6 2 0 0 IS, SOURCE CURRENT (AMPS) td(off) tf 100 tr td(on) 10 10 RG, GATE RESISTANCE (OHMS) 8 12 16 20 24 28 VGS = 0 V 25 20 15 10 5 100 ms 10 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 0.7 0.8 0.9 Figure 10. Diode Forward Voltage vs. Current 10 ms VGS = 20 V SINGLE PULSE TC = 25°C 0.6 VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) EAS, SINGLE PULSE DRAIN−TO−SOURCE AVALANCHE ENERGY (mJ) 100 TJ = 25°C 0 0.5 100 1000 I D, DRAIN CURRENT (AMPS) 4 QG, TOTAL GATE CHARGE (nC) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 0.1 0.1 ID = 30 A VDD = 15 V TJ = 25°C 30 VDD = 15 V ID = 30 A VGS = 11.5 V 1 Q2 Figure 8. Gate−To−Source and Drain−To−Source Voltage vs. Total Charge 1000 t, TIME (ns) Q1 4 Figure 7. Capacitance Variation 1 1 VGS 120 ID = 15 A 100 80 60 40 20 0 25 Figure 11. Maximum Rated Forward Biased Safe Operating Area 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 5 175 NTD4858N r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) TYPICAL PERFORMANCE CURVES 1.0 D = 0.5 0.2 0.1 0.1 0.05 P(pk) 0.02 0.01 SINGLE PULSE 0.01 1.0E-05 1.0E-04 t1 t2 DUTY CYCLE, D = t1/t2 1.0E-03 1.0E-02 t, TIME (ms) RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) − TC = P(pk) RqJC(t) 1.0E-01 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD4858NT4G DPAK (Pb−Free) 2500 / Tape & Reel NTD4858N−1G IPAK (Pb−Free) 75 Units / Rail NTD4858N−35G IPAK Trimmed Lead (3.5 ± 0.15 mm) (Pb−Free) 75 Units / Rail Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 NTD4858N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA ISSUE B NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C A A E b3 c2 B 4 L3 Z D 1 2 H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z L4 b2 e c b 0.005 (0.13) M C H L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD4858N PACKAGE DIMENSIONS 3.5 MM IPAK, STRAIGHT LEAD CASE 369AD ISSUE B E A E3 L2 E2 A1 D2 D L1 L T SEATING PLANE A1 b1 2X e E2 A2 3X b 0.13 M D2 T OPTIONAL CONSTRUCTION http://onsemi.com 8 NOTES: 1.. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2.. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM TERMINAL TIP. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD GATE OR MOLD FLASH. DIM A A1 A2 b b1 D D2 E E2 E3 e L L1 L2 MILLIMETERS MIN MAX 2.19 2.38 0.46 0.60 0.87 1.10 0.69 0.89 0.77 1.10 5.97 6.22 4.80 −−− 6.35 6.73 4.57 5.45 4.45 5.46 2.28 BSC 3.40 3.60 −−− 2.10 0.89 1.27 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN NTD4858N PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F H D G DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− 3 PL 0.13 (0.005) M STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5817−1050 http://onsemi.com 9 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative NTD4858N/D