ON NTR0202PL Power mosfet Datasheet

NTR0202PL, NVTR0202PL
Power MOSFET
−20 V, −400 mA, P−Channel
SOT−23 Package
Features
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• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
•
•
•
RDSon = 0.80 W, VGS = −10 V
RDSon = 1.10 W, VGS = −4.5 V
Miniature SOT−23 Surface Mount Package Saves Board Space
NVT Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) Typ
ID MAX
−20 V
550 mW @ −10 V
−400 mA
P−Channel
D
Applications
•
•
•
•
•
DC−DC Converters
Computers
Printers
PCMCIA Cards
Cellular and Cordless Telephones
G
S
MARKING DIAGRAM &
PIN ASSIGNMENT
Drain
3
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−20
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
Continuous Drain Current @ TA = 25°C
Pulsed Drain Current (tp ≤ 10 ms)
ID
IDM
−0.4
−1.0
A
Total Power Dissipation @ TA = 25°C (Note 1)
PD
225
mW
Operating and Storage Temperature Range
TJ, Tstg
− 55 to
150
°C
Thermal Resistance − Junction−to−Ambient
RqJA
556
°C/W
Source Current (Body Diode)
IS
0.4
A
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 s
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
SOT−23
CASE 318
STYLE 21
PL M G
G
1
Gate
2
Source
PL
= Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NTR0202PLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
NTR0202PLT3G
SOT−23
(Pb−Free)
10000 / Tape &
Reel
NVTR0202PLT1G
SOT−23
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 6
1
Publication Order Number:
NTR0202PL/D
NTR0202PL, NVTR0202PL
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 V, ID = −10 mA)
(Positive Temperature Coefficient)
V(BR)DSS
−20
V
mV/°C
33
Zero Gate Voltage Drain Current
(VDS = −20 V, VGS = 0 V, TJ = 25°C)
(VDS = −20 V, VGS = 0 V, TJ = 150°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 V, VDS = 0 V)
IGSS
mA
−1.0
−10
±100
nA
−1.9
3.0
−2.3
V
mV/°C
0.55
0.80
0.80
1.10
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
(VDS = VGS, ID = −250 mA)
(Negative Temperature Coefficient)
VGS(th)
Static Drain−to−Source On−Resistance
(VGS = −10 V, ID = −200 mA)
(VGS = −4.5 V, ID = −50 mA)
RDS(on)
−1.1
Forward Transconductance
(VDS = −10 V, ID = −200 mA)
W
gfs
0.5
Mhos
Ciss
70
pF
Coss
74
Crss
26
td(on)
3.0
tr
6.0
td(off)
18
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
(VDS = −5.0 V, VGS = 0 V,
F = 1.0 MHz)
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = −15 V, ID = −200 mA,
VGS = −10 V, RG = 6.0 W)
Fall Time
Total Gate Charge
Gate−Source Charge
(VDS = −15 V, ID = −200 mA,
VGS = −10 V)
Gate−Drain Charge
tf
4
QTOT
2.18
QGS
0.41
QGD
0.40
ns
nC
BODY−DRAIN DIODE CHARACTERISTICS (Note 2)
VSD
Diode Forward Voltage (Note 2)
(IS = −400 mA, VGS = 0 V)
(IS = −400 mA, VGS = 0 V, TJ = 150°C)
Reverse Recovery Time
(IS = −1.0 A, VGS = 0 V,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
V
−0.8
−0.65
(IS = −1.0 A, VGS = 0 V,
dIS/dt = 100 A/ms)
trr
11.8
ta
9
tb
3
QRR
0.007
−1.0
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
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2
NTR0202PL, NVTR0202PL
1
VGS = −10 V
TJ = 25°C
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
0.75
−6 V
−4 V
−5.5 V
0.5
−5 V
−3.5 V
−3 V
0.25
−4.5 V
−2.5 V
0
VDS ≥ −10 V
0.75
TJ = 125°C
0.5
TJ = 25°C
0.25
TJ = 40°C
0
0
0.25
0.5
0.75
1.0
0
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
TJ = 150°C
1
TJ = 25°C
0.5
TJ = 40°C
0.375
0.5
5
1.0
VGS = −4.5 V
0.75
VGS = −10 V
0.5
0.25
0
0.125
0.25
0.375
0.5
0.625
0.75
0.875 1.0
−ID, DRAIN CURRENT (AMPS)
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus Drain Current
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
2.5
1000
VGS = 0 V
TJ = 150°C
2
1.5
−IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
4
Figure 2. Transfer Characteristics
1.5
0.25
3
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
0
0.125
2
ID = −0.05 A
VGS = −4.5 V
ID = −0.2 A
VGS = −10 V
1
0.5
0
−40
100
10
1
TJ = 25°C
0.1
−15
10
35
60
85
110
135
150
2
TJ, JUNCTION TEMPERATURE (°C)
6
10
14
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage
Current versus Voltage
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3
18
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
80
Crss
60
Ciss
40
Coss
20
Crss
0
10
5
−VGS
0
5
−VDS
10
15
20
10
QT
7.5
Ciss
5
Q1
2.5
TJ = 25°C
ID = −0.4 A
Crss
0
0
−GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
(VOLTS)
0.5
1
1.5
2
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total
Charge
Figure 7. Capacitance Variation
100
1
−IS, SOURCE CURRENT (AMPS)
VDD = −16 V
ID = −0.2 A
VGS = −4.5 V
t, TIME (ns)
Q2
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
NTR0202PL, NVTR0202PL
td(off)
tf
10
tr
td(on)
VGS = 0 V
TJ = 25°C
0.75
0.5
0.25
0
1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
−VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
RG, GATE RESISTANCE (W)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
0.9
NTR0202PL, NVTR0202PL
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR0202PL/D