Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 1/9 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor BTA3513I3 BVCEO IC RCESAT -80V -10A 75mΩ typ. Features • Low VCE(sat) • High BVCEO • Excellent current gain characteristics • RoHS compliant package Symbol Outline TO-251 BTA3513I3 B：Base C：Collector E：Emitter B B CC E Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Power Dissipation @ TA=25℃ Power Dissipation @ TC=25℃ Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PD PD RθJA RθJC Tj Tstg Limits -100 -80 -7 -10 -16 (Note 1) 1.75 (Note 2) 20 71.4 (Note 2) 6.25 150 -55~+150 Unit V V V A W °C/W °C/W °C °C Note : 1. Single Pulse , Pw≦300μs,Duty≦2%. 2. When mounted on a PCB with the minimum pad size. BTA3513I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 2/9 Characteristics (Ta=25°C) Symbol BVCEO(SUS) ICEO ICES IEBO *VCE(sat) 1 *VCE(sat) 2 *VCE(sat) 3 *RCE(sat) *VBE(sat) 1 *VBE(sat) 2 *VBE(sat) 3 *hFE 1 *hFE 2 *hFE 3 fT Cob ton tstg tf Min. -80 160 180 100 - Typ. -0.2 -0.3 -0.6 75 -0.85 -0.9 -1.0 80 98 135 500 100 Max. -1 -1 -100 -0.3 -0.5 -1.0 125 -1.0 -1.2 -1.5 360 - Unit V μA μA nA V V V mΩ V V V MHz pF ns ns ns Test Conditions IC=-30mA, IB=0 VCE=-80V, IB=0 VCE=-80V, VBE=0 VEB=-7V, IC=0 IC=-3A, IB=-150mA IC=-5A, IB=-250mA IC=-8A, IB=-0.4A IC=-8A, IB=-0.4A IC=-3A, IB=-150mA IC=-5A, IB=-250mA IC=-8A, IB=-0.8A VCE=-2V, IC=-500mA VCE=-2V, IC=-1A VCE=-2V, IC=-3A VCE=-10V, IC=-500mA, f=20MHz VCB=-10V, f=1MHz IC=-5A, IB1=-IB2=-0.5A *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device BTA3513I3 BTA3513I3 Package TO-251 (RoHS compliant) Shipping Marking 80 pcs / tube, 50 tubes / box A3513 CYStek Product Specification Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 3/9 CYStech Electronics Corp. Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 1.2 1mA 0.2 -IC, Collector Current(A) -IC, Collector Current(A) 0.25 0.15 500uA 400uA 300uA 0.1 0.05 1 5mA 0.8 0.6 2.5mA 2mA 1.5mA 0.4 1mA 0.2 200uA -IB=100uA -IB=500uA 0 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 0 6 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 7 3 6 2 -IC, Collector Current(A) -IC, Collector Current(A) 20mA 10mA 8mA 6mA 1 4mA 50mA 5 4 20mA 3 15mA 2 10mA 1 -IB=2mA 0 -IB=5mA 0 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 6 0 1 2 3 4 5 -VCE, Collector-to-Emitter Voltage(V) 1000 125℃ Current Gain---HFE 125℃ 100 75℃ 6 Current Gain vs Collector Current Current Gain vs Collector Current 1000 Current Gain---HFE 6 25℃ 100 75℃ 25℃ -VCE=2V -VCE=1V 10 10 10 BTA3513I3 100 1000 -IC, Collector Current(mA) 10000 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 4/9 Typical Characteristics(Cont.) Current Gain vs Collector Current Saturation Voltage vs Collector Current 1000 125℃ -VCESAT, Saturation Voltage(mV) Current Gain---HFE 1000 100 75℃ 25℃ -VCE=5V 10 VCESAT@IC=10IB 100 25℃ 75℃ 125℃ 10 10 100 1000 -IC, Collector Current(mA) 10000 1 10000 10000 -VCESAT, Saturation Voltage(mV) 1000 -VCESAT, Saturation Voltage(mV) 100 1000 -IC, Collector Current(mA) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current VCESAT@IC=20IB 100 25℃ 75℃ 125℃ VCESAT@IC=50IB 1000 100 25℃ 75℃ 125℃ 10 10 1 10 100 1000 -IC, Collector Current(mA) 1 10000 10 100 1000 -IC, Collector Current(mA) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 10000 10000 -VCE=2V VBESAT@IC=10IB 75℃ -VBEON, On Voltage(mV) -VBESAT, Saturation Voltage(mV) 10 25℃ 1000 125℃ 25℃ 75℃ 1000 125℃ 100 100 1 BTA3513I3 10 100 1000 -IC, Collector Current(mA) 10000 1 10 100 1000 -IC, Collector Current(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Capacitance vs Reverse-biased Voltage Power Derating Curve 10000 2.00 1.80 Power Dissipation---PD(W) Capacitance---(pF) Cib 1000 100 Cob 1.60 1.40 1.20 1.00 0.80 0.60 0.40 0.20 10 0.00 0.1 1 10 Reverse-biased Voltage---VR(V) 100 0 50 100 150 Ambient Temperature---TA(℃) 200 Power Derating Curve Power Dissipation---PD(W) 25 20 15 10 5 0 0 BTA3513I3 50 100 150 Case Temperature---TC(℃) 200 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 6/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature BTA3513I3 Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. CYStek Product Specification Spec. No. : C607I3 Issued Date : 2012.02.10 Revised Date : Page No. : 7/9 CYStech Electronics Corp. TO-251 Dimension Marking: Product Name A3513 Date Code □□ Style: Pin 1.Base 2.Collector 3.Emitter 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Inches Min. Max. 0.250 0.262 0.205 0.213 0.571 0.587 0.028 0.035 0.020 0.028 0.091 TYP 0.091 TYP 0.017 0.023 DIM A B C D E F G H Millimeters Min. Max. 6.350 6.650 5.200 5.400 14.500 14.900 0.700 0.900 0.500 0.700 2.300 TYP 2.300 TYP 0.430 0.580 DIM I J K L M N S T Inches Min. Max. 0.087 0.094 0.213 0.224 0.295 0.311 0.042 0.054 0.017 0.023 0.118 REF 0.197 REF 0.150 REF Millimeters Min. Max. 2.200 2.400 5.400 5.700 7.500 7.900 1.050 1.350 0.430 0.580 3.000 REF 5.000 REF 3.800 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTA3513I3 CYStek Product Specification