ON NTMFS4945N Power mosfet 30 v, 35 a, single n−channel, so−8 fl Datasheet

NTMFS4945N
Power MOSFET
30 V, 35 A, Single N−Channel, SO−8 FL
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• CPU Power Delivery
• DC−DC Converters
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V(BR)DSS
RDS(ON) MAX
9.0 mW @ 10 V
30 V
Symbol
D (5,6)
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
12.4
A
TA = 25°C
Continuous Drain
Current RqJA
(Note 1)
TA = 100°C
TA = 25°C
PD
2.54
W
Continuous Drain
Current RqJA ≤ 10 s
(Note 1)
TA = 25°C
ID
20
A
Continuous Drain
Current RqJA
(Note 2)
TA = 100°C
TA = 25°C
Steady
State
TA = 25°C
PD
6.5
ID
7.4
W
4.7
PD
0.91
W
Continuous Drain
Current RqJC
(Note 1)
TC = 25°C
ID
35
A
TC =100°C
22
PD
19.8
W
IDM
104
A
IDmax
100
A
TJ,
TSTG
−55 to
+150
°C
IS
18
A
Drain to Source DV/DT
dV/dt
8.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, VDD = 50 V, VGS = 10 V,
IL = 23 Apk, L = 0.1 mH, RG = 25 W)
EAS
26.5
mJ
TL
260
TA = 25°C, tp = 10 ms
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2009
September, 2009 − Rev. 1
D
A
TA = 25°C
Pulsed DrainCurrent
MARKING
DIAGRAM
12.6
TA = 100°C
TC = 25°C
S (1,2,3)
N−CHANNEL MOSFET
Power Dissipation
RqJA (Note 2)
Power Dissipation
RqJC (Note 1)
G (4)
7.9
Power Dissipation
RqJA (Note 1)
Power Dissipation
RqJA ≤ 10 s (Note 1)
35 A
13 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
ID MAX
1
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
4945N
AYWWG
G
D
D
D
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NTMFS4945NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NTMFS4945NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTMFS4945N/D
NTMFS4945N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
6.3
Junction−to−Ambient – Steady State (Note 3)
RqJA
49.3
Junction−to−Ambient – Steady State (Note 4)
RqJA
137.5
Junction−to−Ambient – (t ≤ 10 s) (Note 3)
RqJA
19.11
Unit
°C/W
3. Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu.
4. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
15
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.2
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.6
4.0
VGS = 10 V
VGS = 4.5 V
Forward Transconductance
1.2
gFS
ID = 30 A
6.5
ID = 15 A
6.5
ID = 30 A
9.7
ID = 15 A
9.7
VDS = 1.5 V, ID = 15 A
29
mV/°C
9.0
13
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
1205
VGS = 0 V, f = 1 MHz, VDS = 15 V
452
CRSS
14.4
Total Gate Charge
QG(TOT)
7.8
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
VGS = 4.5 V, VDS = 15 V; ID = 30 A
2.0
4.2
pF
nC
1.1
QG(TOT)
VGS = 10 V, VDS = 15 V; ID = 30 A
17.6
nC
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
10.4
tr
td(OFF)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
24
17
2.6
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
ns
NTMFS4945N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
20.7
ns
21
2.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.9
TJ = 125°C
0.84
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 30 A
1.1
V
30.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
14.6
ns
15.6
QRR
18
nC
Source Inductance
LS
1.00
nH
Drain Inductance
LD
0.005
nH
Gate Inductance
LG
1.84
nH
Gate Resistance
RG
PACKAGE PARASITIC VALUES
TA = 25°C
1.1
5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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3
2.0
W
NTMFS4945N
TYPICAL CHARACTERISTICS
4 V to
10 V
50
3.6 V
VDS = 10 V
TJ = 25°C
3.4 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
3.2 V
30
3.0 V
20
2.8 V
10
2.6 V
0
1
2
3
30
20
1.5
2
2.5
3
3.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.015
4
0.011
TJ = 25°C
0.0105
VGS = 4.5 V
0.01
0.0095
0.014
0.013
0.012
0.009
0.0085
0.011
0.010
0.008
0.0075
0.009
0.008
0.007
VGS = 10 V
0.0065
0.007
3.0
4.0
5.0
6.0
7.0
8.0
9.0
VGS (V)
10
0.006
20
25
30
35
40
45
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10000
ID = 30 A
VGS = 10 V
VGS = 0 V
TJ = 150°C
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1
TJ = −55°C
Figure 1. On−Region Characteristics
0.017
0.016
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
0.8
0.7
0.6
TJ = 25°C
10
0
4
0.018
0.006
40
TJ = 125°C
2.4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
50
VGS = 3.8 V
−50
−25
0
25
50
75
100
125
150
1000
TJ = 125°C
100
10
TJ = 85°C
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
30
NTMFS4945N
TYPICAL CHARACTERISTICS
Ciss
C, CAPACITANCE (pF)
1200
1000
VGS = 0 V
TJ = 25°C
800
600
Coss
400
200
0
Crss
0
5
10
15
20
25
30
VGS, GATE−TO−SOURCE VOLTAGE (V)
1400
QT
7
6
5
4
3
2
1
0
Qgs
VDD = 15 V
VGS = 10 V
ID = 30 A
QT
0
5
10
15
20
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
30
IS, SOURCE CURRENT (A)
td(off)
100
tf
tr
10
td(on)
1
10
RG, GATE RESISTANCE (W)
100
VGS = 0 V
25
20
TJ = 125°C
15
10
5
0
TJ = 25°C
0.4
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
1 ms
VGS = 20 V
Single Pulse
TC = 25°C
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
dc
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
100 ms
10
0.1
0.1
1.0
30
100
1
0.5
0.6
0.7
0.8
0.9
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
Qgd
Qg, TOTAL GATE CHARGE (nC)
VDD = 15 V
ID = 15 A
VGS = 10 V
t, TIME (ns)
TJ = 25°C
10
9
8
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
12
11
100
ID = 23 A
25
20
15
10
5
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
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5
15
NTMFS4945N
TYPICAL CHARACTERISTICS
100
Duty Cycle = 50%
20%
1
5%
10%
2%
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
Figure 13. Thermal Response
50
45
40
35
GFS (S)
R(t) (°C/W)
10
30
25
20
15
10
5
0
0
5
10
15
20
25
30
35
ID (A)
Figure 14. GFS vs. ID
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6
40
45 50
10
100
1000
NTMFS4945N
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P (SO8 FL)
CASE 488AA−01
ISSUE D
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
2
A
B
D1
2X
0.20 C
4X
E1
2
3
q
E
2
1
c
A1
4
TOP VIEW
C
3X
e
0.10 C
SEATING
PLANE
DETAIL A
A
0.10 C
DETAIL A
3X
C A B
0.05
c
4X
1.270
b
0.10
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
6. DRAIN
e/2
L
1
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.15 BSC
4.50
4.90
5.10
3.50
−−−
4.22
6.15 BSC
5.50
5.80
6.10
3.45
−−−
4.30
1.27 BSC
0.51
0.61
0.71
0.51
−−−
−−−
0.51
0.61
0.71
0.05
0.17
0.20
3.00
3.40
3.80
0_
−−−
12 _
SOLDERING FOOTPRINT*
SIDE VIEW
8X
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4
K
0.750
4X
1.000
0.965
1.330
2X
0.905
2X
PIN 5
(EXPOSED PAD)
G
0.495
E2
L1
M
4.530
3.200
0.475
D2
2X
1.530
BOTTOM VIEW
4.560
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS4945N/D