MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG Switch-mode Schottky Power Rectifier 250 V, 40 A www.onsemi.com MARKING DIAGRAMS 4 Features • • • • • TO−220 (2−LEAD) CASE 221B 250 V Blocking Voltage Low Forward Voltage Drop, VF = 0.86 V Soft Recovery Characteristic, TRR < 35 ns Stable Switching Performance Over Temperature These Devices are Pb−Free and are RoHS Compliant 3 1, 4 AYWW B40250G KA 1 3 4 Benefits • • • • TO−220 CASE 221A T SUFFIX Reduces or Eliminates Reverse Recovery Oscillations Minimizes Need for EMI Filtering Reduces Switching Losses Improved Efficiency 1 2, 4 3 Applications • • • • 1 Power Supply Power Management Automotive Instrumentation 2 3 TO−220 FULLPACKt CASE 221D T SUFFIX Mechanical Characteristics • Case: Epoxy, Molded • Weight: 1.9 grams (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal • • AYWW B40250TG AKA AYWW B40250TG AKA 1 2 3 1 Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260°C Max. for 10 Seconds Epoxy Meets UL 94 V−0 at 0.125 in 2 3 4 AY WW D2PAK 3 CASE 418B B40250TG AKA 1 1 3 4 3 B40250 = Device Code T = 3 pins A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package KA, AKA = Polarity Designator ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2015 January, 2015 − Rev. 13 1 Publication Order Number: MBR40250/D MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG MAXIMUM RATINGS Symbol Value Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Rating VRRM VRWM VR 250 V Average Rectified Forward Current (Rated VR) TC = 82°C MBR40250, MBR40250T, MBRB40250T (Rated VR) TC = 46°C MBRF40250T IF(AV) 40 A Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) TC = 82°C MBR40250, MBR40250T, MBRB40250T (Rated VR, Square Wave, 20 kHz) TC = 46°C MBRF40250T IFRM 80 A Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) IFSM 150 A Storage Temperature Tstg *65 to +175 °C TJ *65 to +150 °C dv/dt 10,000 V/ms Operating Junction Temperature Voltage Rate of Change (Rated VR) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Value Unit °C/W Maximum Thermal Resistance Junction−to−Case MBR40250(T) and MBRB40250T MBRF40250 Junction−to−Ambient MBR40250(T) MBRF40250 MBRB40250T RqJC RqJA 2.0 3.0 60 50 50 ELECTRICAL CHARACTERISTICS Characteristic Symbol Maximum Instantaneous Forward Voltage (Note 1) IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C IF = 40 A, TC = 25°C IF = 40 A, TC = 125°C VF Maximum Instantaneous Reverse Current (Note 1) Rated DC Voltage, TC = 25°C Rated DC Voltage, TC = 125°C IR Maximum Reverse Recovery Time IF = 1.0 A, di/dt = 50 A/ms, TC = 25°C trr Value Unit V 0.86 0.71 0.97 0.86 mA 0.25 30 ns 35 DYNAMIC CHARACTERISTICS Capacitance VR = −5.0 V, TC = 25°C, Frequency = 1.0 MHz CT pF 500 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%. www.onsemi.com 2 MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG 100 100 IF, MAXIMUM FORWARD CURRENT (A) IF, INSTANTANEOUS FORWARD CURRENT (A) TYPICAL CHARACTERISTICS TJ = 150°C TJ = 125°C 10 TJ = 100°C TJ = 25°C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 TJ = 150°C 10 TJ = 100°C TJ = 125°C TJ = 25°C 1 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) VF, MAXIMUM FORWARD VOLTAGE (V) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E-01 700 1.0E-02 600 1.1 IR, REVERSE CURRENT (A) TJ = 25°C C, CAPACITANCE (pF) TJ = 150°C TJ = 125°C 1.0E-03 TJ = 100°C 1.0E-04 1.0E-05 1.0E-06 500 400 300 200 100 TJ = 25°C 1.0E-07 25 50 100 75 125 150 175 200 225 0 250 1 10 VR, REVERSE VOLTAGE (V) VR, REVERSE VOLTAGE (V) DC Figure 4. Typical Capacitance PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) Figure 3. Typical Reverse Current 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 100 RATED VOLTAGE RqJC = 2°C/W SQUARE WAVE MBR40250 MBR40250T MBRB40250T 0 10 20 30 40 50 60 70 80 90 100110 120 130 140150 50 MBR40250 MBR40250T MBRB40250T 40 30 SQUARE WAVE 20 DC 10 0 0 TC, CASE TEMPERATURE (°C) 5 10 15 20 25 30 35 IO, AVERAGE FORWARD CURRENT (A) Figure 5. Current Derating (Case) for MBR40250, MBR40250T and MBRB40250T Figure 6. Forward Power Dissipation for MBR40250, MBR40250T and MBRB40250T www.onsemi.com 3 40 MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG 70 65 60 55 50 45 40 35 30 25 20 15 10 5 0 PF(AV), AVERAGE POWER DISSIPATION (W) IF(AV), AVERAGE FORWARD CURRENT (A) TYPICAL CHARACTERISTICS RATED VOLTAGE RqJC = 3°C/W DC SQUARE WAVE MBRF40250T 0 10 20 30 40 50 60 70 80 90 100110 120 130 140150 50 MBRF40250T 40 30 SQUARE WAVE 20 DC 10 0 0 TC, CASE TEMPERATURE (°C) 5 10 15 20 25 30 35 40 IO, AVERAGE FORWARD CURRENT (A) Figure 7. Current Derating (Case) for MBRF40250T Figure 8. Forward Power Dissipation for MBRF40250T ORDERING INFORMATION Package Shipping† TO−220 (2−LEAD) (Pb−Free) 50 Units / Rail TO−220 (Pb−Free) 50 Units / Rail MBRF40250TG TO−220 FULLPACK (Pb−Free) 50 Units / Rail MBRB40250TG D2PAK 3 (Pb−Free) 50 Units / Rail MBRB40250TT4G D2PAK 3 (Pb−Free) 800 Units / Tape & Reel Device MBR40250G MBR40250TG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 4 MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AH −T− B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. J G D INCHES MIN MAX 0.570 0.620 0.380 0.415 0.160 0.190 0.025 0.038 0.142 0.161 0.095 0.105 0.110 0.161 0.014 0.024 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.53 4.07 4.83 0.64 0.96 3.61 4.09 2.42 2.66 2.80 4.10 0.36 0.61 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 N STYLE 6: PIN 1. 2. 3. 4. ANODE CATHODE ANODE CATHODE TO−220, 2−LEAD CASE 221B−04 ISSUE F C B Q F S T DIM A B C D F G H J K L Q R S T U 4 A 1 U 3 H K L R D G NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. J INCHES MIN MAX 0.595 0.620 0.380 0.405 0.160 0.190 0.025 0.039 0.142 0.161 0.190 0.210 0.110 0.130 0.014 0.025 0.500 0.562 0.045 0.060 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 STYLE 1: PIN 1. 2. 3. 4. www.onsemi.com 5 CATHODE N/A ANODE CATHODE MILLIMETERS MIN MAX 15.11 15.75 9.65 10.29 4.06 4.82 0.64 1.00 3.61 4.09 4.83 5.33 2.79 3.30 0.36 0.64 12.70 14.27 1.14 1.52 2.54 3.04 2.04 2.79 1.14 1.39 5.97 6.48 0.000 1.27 MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG PACKAGE DIMENSIONS D2PAK 3 CASE 418B−04 ISSUE K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 418B−01 THRU 418B−03 OBSOLETE, NEW STANDARD 418B−04. C E V W −B− 4 DIM A B C D E F G H J K L M N P R S V A 1 2 S 3 −T− SEATING PLANE K W J G D H 3 PL 0.13 (0.005) VARIABLE CONFIGURATION ZONE M T B M N R M STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE P U L L L M M F F F VIEW W−W 1 VIEW W−W 2 VIEW W−W 3 SOLDERING FOOTPRINT* 10.49 8.38 16.155 2X 3.504 2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.310 0.350 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.052 0.072 0.280 0.320 0.197 REF 0.079 REF 0.039 REF 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 7.87 8.89 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 1.32 1.83 7.11 8.13 5.00 REF 2.00 REF 0.99 REF 14.60 15.88 1.14 1.40 MBR40250G, MBR40250TG, MBRF40250TG, MBRB40250TG PACKAGE DIMENSIONS TO−220 FULLPAK CASE 221D−03 ISSUE K −T− −B− F SEATING PLANE C S Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH 3. 221D-01 THRU 221D-02 OBSOLETE, NEW STANDARD 221D-03. U DIM A B C D F G H J K L N Q R S U A 1 2 3 H −Y− K G N L D J R 3 PL 0.25 (0.010) M B M INCHES MIN MAX 0.617 0.635 0.392 0.419 0.177 0.193 0.024 0.039 0.116 0.129 0.100 BSC 0.118 0.135 0.018 0.025 0.503 0.541 0.048 0.058 0.200 BSC 0.122 0.138 0.099 0.117 0.092 0.113 0.239 0.271 MILLIMETERS MIN MAX 15.67 16.12 9.96 10.63 4.50 4.90 0.60 1.00 2.95 3.28 2.54 BSC 3.00 3.43 0.45 0.63 12.78 13.73 1.23 1.47 5.08 BSC 3.10 3.50 2.51 2.96 2.34 2.87 6.06 6.88 STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE Y FULLPAK is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and the are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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