Diodes SMD Type SURFACE MOUNT LOW LEAKAGE DIODE BAV170T; BAV199T SOT-523 Unit: mm +0.1 1.6-0.1 +0.1 1.0-0.1 +0.05 0.2-0.05 1 +0.15 1.6-0.15 Ultra-Small Surface Mount Package +0.05 0.8-0.05 2 0.55 Features +0.01 0.1-0.01 Very Low Leakage Current 0.35 3 +0.25 0.3-0.05 0.5 +0.1 -0.1 +0.1 0.8-0.1 +0.05 0.75-0.05 1. Base 2. Emitter 3. Collecter Absolute Maximum Ratings Ta = 25 Parameter Symbol Conditions Value Unit Peak Repetitive Reverse Voltage VRRM 85 V Working Peak Reverse Voltage VRWM 85 V VR 85 V 60 V DC Blocking Voltage RMS Reverse Voltage Forward Continuous Current (Note 1) Repetitive Peak Forward Current VR(RMS) IFM Single Diode 215 Double Diode 125 500 IFRM @ t = 1.0 Non-Repetitive Peak Forward Surge Current IFSM Thermal Resistance Junction to Ambient Air (Note 1) Operating and Storage Temperature Range PD s @ t = 1.0 ms @ t = 1.0 s Power Dissipation (Note 1) mA mA 4 A 1 0.5 150 mW RèJA 833 /W Tj , TSTG -65 to + 150 Note 1.Device mounted on FR-4 PC board with recommended pad layout www.kexin.com.cn 1 Diodes SMD Type BAV170T; BAV199T Electrical Characteristics Ta = 25 Parameter Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2) Symbol Conditions V(BR)R IR = 100 VF IR Leakage Current (Note 2) Min A Typ 85 CT IF = 1.0 mA 0.90 IF = 10 mA 1.0 IF = 50 mA 1.1 IF = 150 mA 1.25 VR = 75 V 5.0 Reverse Recovery Time trr f = 1 MHz; VR = 0 V IF = IR = 10mA, Irr = 0.1 x IR, RL = 100 Note 2.Short duration test pulse used to minimize self-heating effect. Marking 2 Type BAV170T BAV199T Marking 51 52 www.kexin.com.cn Unit V V nA 80 VR = 75 V; Tj = 150 Total Capacitance Max 2 pF 3.0 ìs