MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# MBR1030CT THRU MBR1060CT Features • • • • Metal of siliconrectifier, majonty carrier conducton Guard ring for transient protection Low power loss high efficiency High surge capacity, High current capability 10 Amp Schottky Barrier Rectifier 30-60 Volts Maximum Ratings • • Operating Temperature: -55°C to +150°C Storage Temperature: -55°C to +175°C Microsemi Catalog Number MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT Device Marking Maximum Recurrent Peak Reverse Voltage 30V 35V 40V 45V 50V 60V MBR1030CT MBR1035CT MBR1040CT MBR1045CT MBR1050CT MBR1060CT TO-220AB Maximum RMS Voltage Maximum DC Blocking Voltage 21V 24.5V 28V 31.5V 35V 42V B M C D A K 30V 35V 40V 45V 50V 60V Peak Forward Surge Current Maximum Forward Voltage Drop Per Element MBR1030CT-45CT MBR1050CT-60CT MBR1030CT-45CT MBR1050CT-60CT Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Junction Capacitance MBR1030CT-45CT MBR1050CT-60CT IF(AV) 10A E PIN 1 2 3 F G I J Electrical Characteristics @ 25°C Unless Otherwise Specified Average Forward Current L N H H TC = 105°C PIN 1 IFSM 125A 8.3ms, half sine IFM = 5A TJ = 25°C IFM = 5A TJ = 125°C VF .70V .80V .57V .65V IR 0.1mA 15mA TJ = 25°C T J = 125°C CJ 170pF 220pF Measured at 1.0MHz, VR=4.0V PIN 2 CASE PIN 3 A B C D E F G H I J K L M N INCHES .560 .625 .380 .420 .100 .135 .230 .270 .380 .420 -----.250 .500 .580 .090 .110 .020 .045 .012 .025 .139 .161 .140 .190 .045 .055 .080 .115 *Pulse test: Pulse width 300 µsec, Duty cycle 2% www . mccsemi.com MM 14.22 9.65 2.54 5.84 9.65 -----12.70 2.29 0.51 0.30 3.53 3.56 1.14 2.03 15.88 10.67 3.43 6.86 10.67 6.35 14.73 2.79 1.14 0.64 4.09 4.83 1.40 2.92 MCC RATING AND CHARACTERISTIC CURVES MBR1030CT thru MBR1060CT 12 8 4 0 RESISTIVE OR INDUCTIVE LOAD 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 16 175 150 125 100 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 100 INSTANTANEOUS FORWARD CURRENT ,(A) 100 10 TJ = 125 C 1.0 0.1 0.01 TJ = 25 C 0.001 MBR1030CT ~ MBR1045CT 10 MBR1050CT ~ MBR1060CT 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 140 120 0.1 0.2 0.3 0.4 0.5 0.6 FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 MBR1030CT ~ MBR1045CT 100 MBR1050CT ~ MBR1060CT TJ = 25 C, f= 1MHz 10 0.1 1 0.7 0.8 0.9 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE ,(%) CAPACITANCE , (pF) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 4 10 100 REVERSE VOLTAGE , VOLTS www.mccsemi.com 1.0