DATA SHEET BCW68G SEMICONDUCTOR H General Purpose Transistors PNP Silicon Pb-Free package is available We declare that the material of product compliance with RoHS requirements. ORDERING INFORMATION Device Marking Shipping BCW68G DG 3000/Tape&Reel SOT–23 (TO–236AB) 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage V CEO – 45 Vdc Collector–Base Voltage V CBO – 60 Vdc Emitter–Base Voltage V EBO – 5.0 Vdc – 800 mAdc Collector Current — Continuous IC 1 2 3 COLLECTOR THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Symbol Max Unit PD 225 mW 1.8 mW/°C RθJA 556 °C/W PD 300 mW 2.4 mW/°C 417 –55 to +150 °C/W °C BASE 2 Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature 1 RθJA TJ , Tstg EMITTER ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0 ) V (BR)CEO – 45 — — Vdc Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0 ) V (BR)CES – 60 — — Vdc Emitter–Base Breakdown Voltage (I E= –10 µAdc, I C = 0) V – 5.0 — — Vdc (VCE = –45 Vdc, I E= 0 ) — — – 20 nAdc (VCE = –45 Vdc, I B= 0 , TA = 150°C) — — – 10 µAdc — — – 20 nAdc OFF CHARACTERISTICS Collector Cutoff Current (BR)EBO I CES Emitter Cutoff Current (VEB = – 4.0 Vdc, I C = 0) I EBO 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. http://www.yeashin.com 1 REV.02 20120705 DEVICE CHARACTERISTICS BCW68G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain hFE — ( IC= –10 mAdc, VCE = –1.0 Vdc ) ( IC= –100 mAdc, VCE = –1.0 Vdc ) ( IC= –300 mAdc, VCE = –1.0 Vdc ) 120 160 — — 400 — 60 — — V CE(sat) — — – 1.5 Vdc V BE(sat) — — – 2.0 Vdc fT 100 — — MHz C obo — — 18 pF C ibo — — 105 pF Noise Figure NF (V CE = – 5.0 Vdc, I C = – 0.2 mAdc, R S = 1.0 kΩ, f = 1.0 kHz, BW = 200 Hz) — — 10 dB Collector–Emitter Saturation Voltage ( IC = – 300 mAdc, IB = –30 mAdc ) Base–Emitter Saturation Voltage ( IC = – 500 mAdc, IB = –50 mAdc ) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = –20mAdc, V CE = –10 Vdc, f = 100 MHz) Output Capacitance (V CB = – 10 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = –0.5 Vdc, I C = 0, f = 1.0 MHz) http://www.yeashin.com 2 REV.02 20120705 PACKAGE OUTLINE & DIMENSIONS BCW68G SOT-23 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,1982 2. CONTROLLING DIMENSION: INCH. A L 3 1 V 2 DIM B S A B C D G H J K L S V G C D H K MIN 0.1102 0.0472 0.0350 0.0150 0.0701 0.0005 0.0034 0.0140 0.0350 0.0830 0.0177 J INCHES MAX 0.1197 0.0551 0.0440 0.0200 0.0807 0.0040 0.0070 0.0285 0.0401 0.1039 0.0236 MILLIMETERS MIN MAX 2.80 3.04 1.20 1.40 0.89 1.11 0.37 0.50 1.78 2.04 0.013 0.100 0.085 0.177 0.35 0.69 0.89 1.02 2.10 2.64 0.45 0.60 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 http://www.yeashin.com inches mm 3 REV.02 20120705