JMNIC BFG21W Uhf power transistor Datasheet

DISCRETE SEMICONDUCTORS
M3D124
BFG21W
UHF power transistor
Product specification
Supersedes data of 1997 Nov 21
File under Discrete Semiconductors, SC14
1998 Jul 06
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
FEATURES
PINNING
• High power gain
PIN
• High efficiency
1, 3
DESCRIPTION
emitter
• 1.9 GHz operating area
2
base
• Linear and non-linear operation.
4
collector
APPLICATIONS
• Common emitter class-AB output stage in hand held
radio equipment at 1.9 GHz such as DECT, PHS, etc.
handbook, halfpage
3
4
• Driver for DCS1800, 1900.
DESCRIPTION
2
NPN double polysilicon bipolar power transistor with
buried layer for low voltage medium power applications
encapsulated in a plastic, 4-pin dual-emitter SOT343R
package.
Top view
1
MSB842
Marking code: P1.
Fig.1 Simplified outline SOT343R.
QUICK REFERENCE DATA
RF performance at Ts ≤ 60 °C in a common emitter test circuit.
MODE OF OPERATION
Pulsed class-AB; δ < 1 : 2; tp = 5 ms
1998 Jul 06
f
(GHz)
VCE
(V)
PL
(dBm)
Gp
(dB)
ηC
(%)
1.9
3.6
26
≥10
typ.55
2
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
15
V
VCEO
collector-emitter voltage
open base
−
4.5
V
VEBO
emitter-base voltage
open collector
−
1
V
IC
collector current (DC)
−
500
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−
600
mW
Tstg
storage temperature
−65
+150
°C
Tj
operating junction temperature
−
150
°C
Note
1. Ts is the temperature at the soldering point of the emitter pins.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to
soldering point
Ts ≤ 60 °C; Ptot = 600 mW; note 1
VALUE
UNIT
150
K/W
Note
1. Ts is the temperature at the soldering point of the emitter pins.
MGM219
103
handbook, full pagewidth
Rth
(K/W)
102
δ=
1
0.75
0.5
0.33
0.2
0.1
10
0.05
δ=
P
tp
T
0.02
0.01
0
t
tp
T
1
10−6
10−5
10−4
10−3
10−2
10−1
At temperature stabilization solder point has been reached.
Fig.2 Transient thermal resistance as a function of pulse time; typical values.
1998 Jul 06
3
tp (s)
1
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
−
V(BR)CBO
collector-base breakdown voltage
open emitter; IC = 0.1 mA
15
V
V(BR)CEO
collector-emitter breakdown voltage
open base; IC = 10 mA
4.5
−
V
V(BR)CER
collector-emitter breakdown voltage
RBE < 1 kΩ, IC = 10 mA
10
−
V
V(BR)EBO
emitter-base breakdown voltage
open collector; IE = 0.1 mA
1
−
V
µA
ICES
collector leakage current
VCE = 5 V; VBE = 0
−
10
hFE
DC current gain
IC = 200 mA; VCE = 2 V
40
100
Cc
collector capacitance
IE = ie= 0; VCB = 3 V; f = 1 MHz
−
3
Cre
feedback capacitance
IC = 0; VCB = 3.6 V; f = 1 MHz
−
1.5
pF
fT
transition frequency
IC = 200 mA; VCE = 3.6 V;
f = 700 MHz
18
−
GHz
pF
APPLICATION INFORMATION
RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Figs 4 and 5).
MODE OF OPERATION
f
(GHz)
VCE
(V)
ICQ
(mA)
PL
(dBm)
Gp
(dB)
ηC
(%)
Pulsed; class-AB; δ < 1 : 2; tp = 5 ms
1.9
3.6
1
26
≥10
typ. 55
Ruggedness in class-AB operation
The transistor is capable of withstanding a load mismatch
corresponding to VSWR = 6 : 1 through all phases at
26 dBm output power under pulsed conditions: δ = 1 : 2;
tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V.
MGM220
16
handbook, halfpage
(dB)
80
ηC
(%)
Gp
Gp
12
60
8
40
ηC
4
20
0
5
10
15
20
0
25
30
PL (dBm)
Pulsed, class-AB operation; δ < 1 : 2; tp = 5 ms.
f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm.
Fig.3
1998 Jul 06
4
Power gain and collector efficiency as a
function of the load power; typical values.
Philips Semiconductors
Product specification
UHF power transistor
handbook, full pagewidth
BFG21W
VC
VS
R1
L5
R2
C7
R3
C6
TR1
C3
L4
L1
RF input
50 Ω
L3
C5
L2
C1
RF output
50 Ω
DUT
C4
C2
MGM221
Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz.
List of components used in test circuit (see Figs 4 and 5)
COMPONENT
C1, C5
DESCRIPTION
VALUE
multilayer ceramic chip capacitor; note 1
DIMENSIONS
CATALOGUE No.
24 pF
C2
multilayer ceramic chip capacitor; note 1
3.3 pF
C3, C6
multilayer ceramic chip capacitor, note 1
15 pF
C4
multilayer ceramic chip capacitor; note 1
2.4 pF
C7
multilayer ceramic chip capacitor; note 1
1 nF
L1, L4
stripline; note 2
100 Ω
18 × 0.2 mm
L2
stripline; note 2
50 Ω
3.2 × 0.8 mm
50 Ω
4.6 × 0.8 mm
L3
stripline; note 2
L5
Grade 4S2 Ferroxcube chip bead
R1
metal film resistor
220 Ω; 0.4 W
R2, R3
metal film resistor
10 Ω; 0.4 W
TR1
NPN transistor
BC817
4330 030 36300
9335 895 20215
Notes
1. American Technical Ceramics type 100A or capacitor of same quality.
2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6.15,
tan δ = 0.0019); thickness 0.64 mm, copper cladding = 35 µm.
1998 Jul 06
5
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
45
handbook, full pagewidth
35
VS
VC
R1
TR1
L5
R2
R3
C3
C7
C6
L1
L4
C2
C1
C5
L2
L3
input
DUT
C4
output
MGM222
Dimensions in mm.
The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane.
Earth connections from the component side to the ground plane are made by through metallization.
Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4.
1998 Jul 06
6
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
MGM223
MGM224
16
L
(Ω)
12
10
Zi
handbook,
Z halfpage
handbook, halfpage
(Ω)
ri
8
RL
8
6
4
xi
4
0
2
0
1.8
1.85
1.9
1.95
f (GHz)
−8
1.8
2.0
Input impedance as function of frequency
(series components); typical values.
1998 Jul 06
1.85
1.9
1.95
f (GHz)
2.0
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts ≤ 60 °C.
VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts ≤ 60 °C.
Fig.6
XL
−4
Fig.7
7
Load impedance as a function of frequency
(series components); typical values.
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
PACKAGE OUTLINE
Plastic surface mounted package; reverse pinning; 4 leads
D
SOT343R
E
B
A
X
HE
y
v M A
e
3
4
Q
A
A1
c
2
w M B
1
bp
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343R
1998 Jul 06
EUROPEAN
PROJECTION
8
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Jul 06
9
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
NOTES
1998 Jul 06
10
Philips Semiconductors
Product specification
UHF power transistor
BFG21W
NOTES
1998 Jul 06
11
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© Philips Electronics N.V. 1998
SCA60
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125104/00/03/pp12
Date of release: 1998 Jul 06
Document order number:
9397 750 03971
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