DISCRETE SEMICONDUCTORS M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 File under Discrete Semiconductors, SC14 1998 Jul 06 Philips Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN • High efficiency 1, 3 DESCRIPTION emitter • 1.9 GHz operating area 2 base • Linear and non-linear operation. 4 collector APPLICATIONS • Common emitter class-AB output stage in hand held radio equipment at 1.9 GHz such as DECT, PHS, etc. handbook, halfpage 3 4 • Driver for DCS1800, 1900. DESCRIPTION 2 NPN double polysilicon bipolar power transistor with buried layer for low voltage medium power applications encapsulated in a plastic, 4-pin dual-emitter SOT343R package. Top view 1 MSB842 Marking code: P1. Fig.1 Simplified outline SOT343R. QUICK REFERENCE DATA RF performance at Ts ≤ 60 °C in a common emitter test circuit. MODE OF OPERATION Pulsed class-AB; δ < 1 : 2; tp = 5 ms 1998 Jul 06 f (GHz) VCE (V) PL (dBm) Gp (dB) ηC (%) 1.9 3.6 26 ≥10 typ.55 2 Philips Semiconductors Product specification UHF power transistor BFG21W LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 15 V VCEO collector-emitter voltage open base − 4.5 V VEBO emitter-base voltage open collector − 1 V IC collector current (DC) − 500 mA Ptot total power dissipation Ts ≤ 60 °C; note 1 − 600 mW Tstg storage temperature −65 +150 °C Tj operating junction temperature − 150 °C Note 1. Ts is the temperature at the soldering point of the emitter pins. THERMAL CHARACTERISTICS SYMBOL Rth j-s PARAMETER CONDITIONS thermal resistance from junction to soldering point Ts ≤ 60 °C; Ptot = 600 mW; note 1 VALUE UNIT 150 K/W Note 1. Ts is the temperature at the soldering point of the emitter pins. MGM219 103 handbook, full pagewidth Rth (K/W) 102 δ= 1 0.75 0.5 0.33 0.2 0.1 10 0.05 δ= P tp T 0.02 0.01 0 t tp T 1 10−6 10−5 10−4 10−3 10−2 10−1 At temperature stabilization solder point has been reached. Fig.2 Transient thermal resistance as a function of pulse time; typical values. 1998 Jul 06 3 tp (s) 1 Philips Semiconductors Product specification UHF power transistor BFG21W CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT − V(BR)CBO collector-base breakdown voltage open emitter; IC = 0.1 mA 15 V V(BR)CEO collector-emitter breakdown voltage open base; IC = 10 mA 4.5 − V V(BR)CER collector-emitter breakdown voltage RBE < 1 kΩ, IC = 10 mA 10 − V V(BR)EBO emitter-base breakdown voltage open collector; IE = 0.1 mA 1 − V µA ICES collector leakage current VCE = 5 V; VBE = 0 − 10 hFE DC current gain IC = 200 mA; VCE = 2 V 40 100 Cc collector capacitance IE = ie= 0; VCB = 3 V; f = 1 MHz − 3 Cre feedback capacitance IC = 0; VCB = 3.6 V; f = 1 MHz − 1.5 pF fT transition frequency IC = 200 mA; VCE = 3.6 V; f = 700 MHz 18 − GHz pF APPLICATION INFORMATION RF performance at Ts ≤ 60 °C in a common emitter test circuit (see Figs 4 and 5). MODE OF OPERATION f (GHz) VCE (V) ICQ (mA) PL (dBm) Gp (dB) ηC (%) Pulsed; class-AB; δ < 1 : 2; tp = 5 ms 1.9 3.6 1 26 ≥10 typ. 55 Ruggedness in class-AB operation The transistor is capable of withstanding a load mismatch corresponding to VSWR = 6 : 1 through all phases at 26 dBm output power under pulsed conditions: δ = 1 : 2; tp = 5 ms; f = 1.9 GHz at VCE = 4.5 V. MGM220 16 handbook, halfpage (dB) 80 ηC (%) Gp Gp 12 60 8 40 ηC 4 20 0 5 10 15 20 0 25 30 PL (dBm) Pulsed, class-AB operation; δ < 1 : 2; tp = 5 ms. f = 1.9 GHz; VCE = 3.6 V; ICQ = 1 mA; tuned at PL = 26 dBm. Fig.3 1998 Jul 06 4 Power gain and collector efficiency as a function of the load power; typical values. Philips Semiconductors Product specification UHF power transistor handbook, full pagewidth BFG21W VC VS R1 L5 R2 C7 R3 C6 TR1 C3 L4 L1 RF input 50 Ω L3 C5 L2 C1 RF output 50 Ω DUT C4 C2 MGM221 Fig.4 Common emitter test circuit for class-AB operation at 1.9 GHz. List of components used in test circuit (see Figs 4 and 5) COMPONENT C1, C5 DESCRIPTION VALUE multilayer ceramic chip capacitor; note 1 DIMENSIONS CATALOGUE No. 24 pF C2 multilayer ceramic chip capacitor; note 1 3.3 pF C3, C6 multilayer ceramic chip capacitor, note 1 15 pF C4 multilayer ceramic chip capacitor; note 1 2.4 pF C7 multilayer ceramic chip capacitor; note 1 1 nF L1, L4 stripline; note 2 100 Ω 18 × 0.2 mm L2 stripline; note 2 50 Ω 3.2 × 0.8 mm 50 Ω 4.6 × 0.8 mm L3 stripline; note 2 L5 Grade 4S2 Ferroxcube chip bead R1 metal film resistor 220 Ω; 0.4 W R2, R3 metal film resistor 10 Ω; 0.4 W TR1 NPN transistor BC817 4330 030 36300 9335 895 20215 Notes 1. American Technical Ceramics type 100A or capacitor of same quality. 2. The striplines are on a double copper-clad printed-circuit board with PTFE fibre-glass dielectric (εr = 6.15, tan δ = 0.0019); thickness 0.64 mm, copper cladding = 35 µm. 1998 Jul 06 5 Philips Semiconductors Product specification UHF power transistor BFG21W 45 handbook, full pagewidth 35 VS VC R1 TR1 L5 R2 R3 C3 C7 C6 L1 L4 C2 C1 C5 L2 L3 input DUT C4 output MGM222 Dimensions in mm. The components are situated on one side of the copper-clad PTFE fibre-glass board, the other side is unetched and serves as a ground plane. Earth connections from the component side to the ground plane are made by through metallization. Fig.5 Printed-circuit board and component lay-out for 1.9 GHz class-AB test-circuit in Fig.4. 1998 Jul 06 6 Philips Semiconductors Product specification UHF power transistor BFG21W MGM223 MGM224 16 L (Ω) 12 10 Zi handbook, Z halfpage handbook, halfpage (Ω) ri 8 RL 8 6 4 xi 4 0 2 0 1.8 1.85 1.9 1.95 f (GHz) −8 1.8 2.0 Input impedance as function of frequency (series components); typical values. 1998 Jul 06 1.85 1.9 1.95 f (GHz) 2.0 VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts ≤ 60 °C. VCE = 3.6 V; ICQ = 1 mA; PL = 26 dBm; Ts ≤ 60 °C. Fig.6 XL −4 Fig.7 7 Load impedance as a function of frequency (series components); typical values. Philips Semiconductors Product specification UHF power transistor BFG21W PACKAGE OUTLINE Plastic surface mounted package; reverse pinning; 4 leads D SOT343R E B A X HE y v M A e 3 4 Q A A1 c 2 w M B 1 bp Lp b1 e1 detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp b1 c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.4 0.3 0.7 0.5 0.25 0.10 2.2 1.8 1.35 1.15 1.3 1.15 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.2 0.1 OUTLINE VERSION REFERENCES IEC JEDEC EIAJ ISSUE DATE 97-05-21 SOT343R 1998 Jul 06 EUROPEAN PROJECTION 8 Philips Semiconductors Product specification UHF power transistor BFG21W DEFINITIONS Data Sheet Status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Jul 06 9 Philips Semiconductors Product specification UHF power transistor BFG21W NOTES 1998 Jul 06 10 Philips Semiconductors Product specification UHF power transistor BFG21W NOTES 1998 Jul 06 11 Philips Semiconductors – a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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