QFET ® FQA8N80 800V N-Channel MOSFET Features Description • • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies, active power factor correction, electronic lamp ballast based on half bridge topology. 8.4A, 800V, RDS(on) = 1.2Ω @VGS = 10 V Low gate charge ( typical 44 nC) Low Crss ( typical 20pF) Fast switching 100% avalanche tested Improved dv/dt capability D G TO-3P FQA Series G DS S Absolute Maximum Ratings Symbol Parameter FQA8N80 Units VDSS Drain-Source Voltage 800 V ID Drain Current - Continuous (TC = 25°C) 8.4 A IDM Drain Current - Pulsed VGSS Gate-Source Voltage ± 30 V EAS Single Pulsed Avalanche Energy (Note 2) 850 mJ IAR Avalanche Current (Note 1) 8.4 A EAR Repetitive Avalanche Energy (Note 1) 22 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) PD Power Dissipation (TC = 25°C) TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds - Continuous (TC = 100°C) (Note 1) - Derate above 25°C 5.3 A 33.6 A 4.0 V/ns 220 W 1.75 W/°C -55 to +150 °C 300 °C Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction-to-Case RθCS Thermal Resistance, Case-to-Sink RθJA Thermal Resistance, Junction-to-Ambient ©2006 Fairchild Semiconductor Corporation FQA8N80 Rev. A1 1 Typ Max Units -- 0.57 °C/W 0.24 -- °C/W -- 40 °C/W www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET September 2006 Device Marking Device Package Reel Size Tape Width Quantity FQA8N80 FQA8N80 TO-3P -- -- 30 FQA8N80 FQA8N80_F109 TO-3PN -- -- 30 Electrical Characteristics Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 800 -- -- V Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS/ ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.95 -- V/°C IDSS Zero Gate Voltage Drain Current VDS = 800 V, VGS = 0 V -- -- 10 µA VDS = 640 V, TC = 125°C -- -- 100 µA IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA 3.0 -- 5.0 V -- 0.94 1.2 Ω -- 8.8 -- S On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 4.2 A gFS Forward Transconductance VDS = 50 V, ID = 4.2 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 1800 2350 pF -- 180 235 pF -- 20 26 pF -- 40 90 ns -- 110 230 ns -- 100 210 ns -- 80 170 ns -- 44 57 nC -- 10 -- nC -- 20 -- nC Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd VDD = 400 V, ID = 8.4A, RG = 25 Ω (Note 4, 5) VDS = 640 V, ID = 8.4A, VGS = 10 V (Note 4, 5) Gate-Drain Charge Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 8.4 A ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 33.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS =8.4 A -- -- 1.4 V trr Reverse Recovery Time 690 -- ns Reverse Recovery Charge VGS = 0 V, IS = 8.4 A, dIF / dt = 100 A/µs -- Qrr -- 8.2 -- µC (Note 4) NOTES: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 22.6mH, IAS =8.4A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 8.4A, di/dt ≤200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2% 5. Essentially independent of operating temperature FQA8N80 Rev. A1 2 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Package Marking and Ordering Information FQA8N80 800V N-Channel MOSFET Typical Performance Characteristics Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V Bottom : 5.5 V Top : ID, Drain Current [A] 1 10 ID, Drain Current [A] 1 10 0 10 o 150 C o 25 C 0 10 o -55 C ※ Notes : 1. 250µs Pulse Test 2. TC = 25℃ -1 10 ※ Notes : 1. VDS = 50V 2. 250µ s Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 2.5 IDR, Reverse Drain Current [A] RDS(ON) [Ω ], Drain-Source On-Resistance 3.0 VGS = 10V 2.0 VGS = 20V 1.5 1.0 1 10 0 10 150℃ 25℃ ※ Notes : 1. VGS = 0V 2. 250µs Pulse Test ※ Note : TJ = 25℃ 0.5 -1 0 5 10 15 20 25 10 30 0.2 0.4 0.6 Figure 5. Capacitance Characteristics 3500 VGS, Gate-Source Voltage [V] Capacitance [pF] 1.4 VDS = 160V Ciss 2000 Coss 1500 1000 1.2 12 10 2500 1.0 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 3000 0.8 VSD, Source-Drain voltage [V] ID, Drain Current [A] ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Crss 500 VDS = 400V VDS = 640V 8 6 4 2 ※ Note : ID = 8.4 A 0 -1 10 0 0 10 1 10 FQA8N80 Rev. A1 0 10 20 30 40 50 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Typical Performance Characteristics (Continued) Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 µA 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 4.2 A 0.5 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 9.0 2 Operation in This Area is Limited by R DS(on) 7.5 100µ s 1 10 10µ s ID, Drain Current [A] ID, Drain Current [A] 10 1 ms 10 ms DC 0 10 -1 10 ※ Notes : o 1. TC = 25 C 6.0 4.5 3.0 1.5 o 2. TJ = 150 C 3. Single Pulse -2 10 0 10 1 2 10 0.0 25 3 10 10 50 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Zθ JC(t), Thermal Response Figure 11. Transient Thermal Response Curve D = 0 .5 ※ N o te s : 1 . Z θ JC (t) = 0 .5 7 ℃ /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C (t) 0 .2 10 -1 0 .1 PDM 0 .0 5 t1 0 .0 2 0 .0 1 10 -2 10 -5 t2 s in g le p u ls e 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQA8N80 Rev. A1 4 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FQA8N80 Rev. A1 5 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms FQA8N80 Rev. A1 6 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Mechanical Dimensions TO-3P 15.60 ±0.20 3.00 ±0.20 3.80 ±0.20 +0.15 1.00 ±0.20 18.70 ±0.20 23.40 ±0.20 19.90 ±0.20 1.50 –0.05 16.50 ±0.30 2.00 ±0.20 9.60 ±0.20 4.80 ±0.20 3.50 ±0.20 13.90 ±0.20 ø3.20 ±0.10 12.76 ±0.20 13.60 ±0.20 1.40 ±0.20 +0.15 5.45TYP [5.45 ±0.30] 5.45TYP [5.45 ±0.30] 0.60 –0.05 Dimensions in Millimeters FQA8N80 Rev. A1 7 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET Mechanical Dimensions (Continued) TO-3PN Dimensions in Millimeters FQA8N80 Rev. A1 8 www.fairchildsemi.com The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. 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A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I20 9 FQA8N80 Rev. A1 www.fairchildsemi.com FQA8N80 800V N-Channel MOSFET TRADEMARKS