Yea Shin BC858B General purpose transistor Datasheet

DATA SHEET
BC85x Series
SEMICONDUCTOR
General Purpose Transistors
H
PNP Silicon
• Moisture Sensitivity Level: 1
• ESD Rating – Human Body Model: >4000 V
ESD Rating – Machine Model: >400 V
• We declare that the material of product compliance with
RoHS requirements.
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
BC856
BC857
BC858, BC859
VCEO
–65
–45
–30
V
Collector-Base Voltage
BC856
BC857
BC858, BC859
VCBO
–80
–50
–30
V
VEBO
–5.0
V
IC
–100
mAdc
Emitter–Base Voltage
Collector Current – Continuous
SOT–23
3
COLLECT OR
1
B ASE
2
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR–5 Board,
(Note 1.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
EMIT T ER
Symbol
Max
Unit
225
1.8
mW
mW/°C
556
°C/W
PD
RqJA
MARKING DIAGRAM
3
xx
Total Device Dissipation Alumina
Substrate, (Note 2.) TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Junction and Storage Temperature
PD
300
2.4
mW
mW/°C
RqJA
417
°C/W
TJ, Tstg
–55 to
+150
°C
2
1
xx= Device Marking
(See Table Below)
1. FR–5 = 1.0 x 0.75 x 0.062 in
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
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1
REV.02 20130403
BC85x Series
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Package
Shipping
BC856A
3A
SOT-23
3000/Tape&Reel
BC856A
3A
SOT-23
10000/Tape&Reel
BC856B
3B
SOT-23
3000/Tape&Reel
BC856B
3B
SOT-23
10000/Tape&Reel
BC857A
3E
SOT-23
3000/Tape&Reel
BC857A
3E
SOT-23
10000/Tape&Reel
BC857B
3F
SOT-23
3000/Tape&Reel
BC857B
3F
SOT-23
10000/Tape&Reel
BC857C
3G
SOT-23
3000/Tape&Reel
BC857C
3G
SOT-23
10000/Tape&Reel
BC858A
3J
SOT-23
3000/Tape&Reel
BC858A
3J
SOT-23
10000/Tape&Reel
BC858B
3K
SOT-23
3000/Tape&Reel
BC858B
3K
SOT-23
10000/Tape&Reel
BC858C
3L
SOT-23
3000/Tape&Reel
BC858C
3L
SOT-23
10000/Tape&Reel
BC859B
4B
SOT-23
3000/Tape&Reel
BC859B
4B
SOT-23
10000/Tape&Reel
BC859C
4C
SOT-23
3000/Tape&Reel
BC859C
4C
SOT-23
10000/Tape&Reel
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BC85x Series
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CEO
–65
–45
–30
–
–
–
–
–
–
V
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CES
–80
–50
–30
–
–
–
–
–
–
V
Collector–Base Breakdown Voltage
(IC = –10 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)CBO
–80
–50
–30
–
–
–
–
–
–
V
Emitter–Base Breakdown Voltage
(IE = –1.0 mA)
BC856 Series
BC857 Series
BC858, BC859 Series
V(BR)EBO
–5.0
–5.0
–5.0
–
–
–
–
–
–
V
ICBO
–
–
–
–
–15
–4.0
nA
µA
125
220
420
180
290
520
250
475
800
–
–
–
–
–0.3
–0.65
–
–
–0.7
–0.9
–
–
–0.6
–
–
–
–0.75
–0.82
fT
100
–
–
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
–
–
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
BC856, BC857, BC858 Series
BC859 Series
NF
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
ON CHARACTERISTICS
DC Current Gain
(IC = –2.0 mA, VCE = –5.0 V)
hFE
BC856A, BC857A, BC858A
BC856B, BC857B, BC858B, BC859B
BC857C, BC858C, BC859C
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
–
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
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3
dB
–
–
–
–
10
4.0
REV.02 20130403
DEVICE CHARACTERISTICS
BC85xSeries
BC857/ BC858
–1.0
1.5
VCE= –10 V
–0.9
T A = 25°C
–0.8
V, VOLTAGE (VOLTS)
hFE, NORMALIZED DC CURRENT GAIN
2.0
1.0
0.7
0.5
T A = 25°C
V BE(sat) @ I C /I B=10
–0.7
V BE(on) @ V CE = –10 V
–0.6
–0.5
–0.4
–0.3
–0.2
0.3
V CE(sat) @ I C /I B = 10
–0.1
0
0.2
–0.2
–0.5
–1.0
–2.0
–5.0
–10
–20
–50
–100
–200
–0.1
T A = 25°C
–1.6
–1.2
IC=
I C= –50 mA
I C= –200 mA
–10 mA
I C= –100 mA
I C= –20 mA
–0.4
–1.0
–2.0
–5.0
–10
–20
–50
–100
I C , COLLECTOR CURRENT (mAdc)
–2.0
–0.8
–0.5
Figure 2. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE, COLLECTOR– EMITTER VOLTAGE (V)
I C , COLLECTOR CURRENT (mAdc)
Figure 1. Normalized DC Current Gain
–0.2
1.0
–55°C to +125°C
1.2
1.6
2.0
2.4
2.8
0
–0.02
–0.1
–1.0
–10
–20
–0.2
I B , BASE CURRENT (mA)
Figure 3. Collector Saturation Region
–1.0
–10
–100
I C , COLLECTOR CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
400
300
10.0
fT, CURRENT– GAIN – BANDWIDTH
PRODUCT (MHz)
C ib
7.0
T A=25°C
V, VOLTAGE (VOLTS)
5.0
C ob
3.0
2.0
200
V CE =–10V
T A = 25°C
100
80
60
40
30
20
1.0
–0.4
–0.6
–1.0
–2.0
–4.0
–6.0
–10
–20 –30 –40
–0.5
–1.0
–2.0
–3.0
–5.0
–10
–20
–30
–50
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mAdc)
Figure 5. Capacitances
Figure 6. Current–Gain – Bandwidth Product
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DEVICE CHARACTERISTICS
BC85x Series
–1.0
T J= 25°C
V CE = –5.0V
T A = 25°C
V, VOLTAGE (VOLTS)
–0.8
2.0
1.0
0.5
0.2
–0.2
VCE(sat) @ I C /I B= 10
0
–0.2
–0.5 –1.0 –2.0
–5.0 –10 –20
–50 –100 –200
I C , COLLECTOR CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 7. DC Current Gain
Figure 8. “On” Voltage
–1.6
IC =
–10 mA
–20mA
–50mA
–100mA –200mA
–0.8
–0.4
TJ= 25°C
0
–0.02 –0.05 –0.1 –0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–1.0
–1.4
–1.8
θ VB for V BE
–55°C to 125°C
–2.2
–2.6
–3.0
–0.2
–0.5 –1.0 –2.0
–5.0
–10 –20
–50 –100 –200
I B , BASE CURRENT (mA)
I C , COLLECTOR CURRENT (mA)
Figure 9. Collector Saturation Region
Figure 10. Base–Emitter Temperature Coefficient
40
C, CAPACITANCE (pF)
VBE @VCE= –5.0 V
–0.4
–1.0–2.0 –5.0–10–20 –50–100–200
–2.0
–1.2
–0.6
θVB , TEMPERATURE COEFFICIENT (mV/°C)
–0.1–0.2
VBE(sat) @ I C/I B= 10
T J= 25°C
20
C ib
10
8.0
6.0
C ob
4.0
2.0
–0.1–0.2 –0.5
–1.0 –2.0
–5.0 –10 –20
–50 –100
fT, CURRENT– GAIN – BANDWIDTH PRODUCT T
V CE , COLLECTOR– EMITTER VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
BC856
500
VCE= –5.0 V
200
100
50
20
–1.0
–10
–100
V R , REVERSE VOLTAGE (VOLTS)
I C , COLLECTOR CURRENT (mA)
Figure 11. Capacitance
Figure 12. Current–Gain – Bandwidth Product
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DEVICE CHARACTERISTICS
BC85x Series
r( t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
0.7
0.5
D=0.5
0.2
0.3
0.2
0.05
0.1
SINGLE PULSE
0.1
P(pk)
SINGLE PULSE
0.07
Z θJC (t) = r(t) R θJC
R θJC = 83.3°C/W MAX
Z θJA (t) = r(t) R θJA
R θJA = 200°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R θJC (t)
t1
0.05
t2
0.03
0.02
DUTY CYCLE, D = t 1 /t 2
0.01
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
1.0k 2.0k
5.0k
t, TIME (ms)
Figure 13. Thermal Response
–200
1s
The safe operating area curves indicate I C –V CE limits of the
transistor that must be observed for reliable operation. Collector
3 ms
I C , COLLECTOR CURRENT (mA)
–100
–50
load lines for specific circuits must fall below the limits indicated by
the applicable curve.
TJ= 25°C
TA= 25°C
The data of Figure 14 is based upon T J(pk) = 150°C; T C or T A
is variable depending upon conditions. Pulse curves are valid for
duty cycles to 10% provided T J(pk) < 150°C. T J(pk) may be calculated from the data in Figure 13. At high case or ambient
BC558
BC557
–10
BC556
–5.0
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the sec-
BONDING WIRE LIMIT
ondary breakdown.
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
–2.0
–1.0
–0.5
–10
–30 –45 –65 –100
V CE , COLLECTOR–EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
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REV.02 20130403
10k
PACKAGE OUTLINE & DIMENSIONS
BC85x Series
SOT-23
NOTES:
A
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
L
3
1
V
2
B S
DIM
G
A
B
C
D
G
H
J
K
L
S
V
C
D
H
K
J
INCHES
MIN
MAX
0.1102
0.1197
0.0472
0.0551
0.0350
0.0440
0.0150
0.0200
0.0701
0.0807
0.0005
0.0040
0.0034
0.0070
0.0140
0.0285
0.0350
0.0401
0.0830
0.1039
0.0177
0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.177
0.35
0.69
0.89
1.02
2.10
2.64
0.45
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
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inches
mm
7
REV.02 20130403
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