KEC GM100HB12BTA Positive temperature coefficient Datasheet

SEMICONDUCTOR
GM100HB12BTA
TECHNICAL DATA
1200V/100A
2-PACK IGBT MODULE (Half - Bridge)
FEATURES
·Field Stop Trench Technology
·Low VCE(sat)
·Low Turn-off loss
·Short tail current
·Positive temperature coefficient
·10us Short Circuit Capability
·UL Recognized. File No. E305401
APPLICATION
·Motor Controls
OUTLINE DRAWING
·General purpose inverters
·Servo Controls
_ 0.3
13 +
Unit : mm
_ 0.3
13 +
_ 0.3
13 +
2
_ 0.3
23 +
3
_ 0.5
35 +
_ 0.5
28 +
5
4
_ 0.3
23 +
_ 0.5
80 +
_ 0.5
93 +
5
4
4. G1
5. E1
6. G2
7. E2
_ 0.5
31 +
_ 0.5
30 +
_ 0.5
30 +
_ 0.3
17 +
_ 0.5
22 +
1. C2 /E1
2. E2
3. C1
3
_ 0.5
6+
1
2
_ 0.3
25 +
6
7
6
7
1
_ 0.3
17 +
_ 0.3
14 +
INTERNAL CIRCUIT
MAXIMUM RATING (Ta=25℃)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-to-Emitter Voltage
VCES
1200
V
Gate-Emitter Voltage
VGES
±20
V
Continuous Collector Current
DC
IC
100
A
Pulsed Collector Current
1ms
ICP
200
A
PD
416
W
Viso
2500
V
Junction Temperature
Tj
-40 ~ +150
℃
Storage Temperature
Tstg
-40 ~ +125
℃
Weight
190±5
g
Mounting Torque (M6)
M
5
N.m
Terminal Connection torque (M5)
M
4
N.m
Power Dissipation
Isolation Voltage test
AC @ 1 minute
Weight
2018. 01. 09
Revision No : 1
1/8
GM100HB12BTA
ELECTRICAL CHARACTERISTICS (Ta=25℃)
CHARACTERISTIC
SYMBOL
Collector-Emitter Breakdown Voltage
BVCES
TEST CONDITION
MIN.
TYP.
MAX.
UNIT
1200
-
-
V
Static
VGE=0V , IC=1mA
Collector Cut-off Current
ICES
VGE=0V, VCE=1200V
-
-
1.0
mA
Gate Leakage Current
IGES
VCE=0V, VGE=±20V
-
-
±100
nA
VGE=VCE, IC=1mA
-
5.8
-
V
VGE=15V, IC=100A
-
2.1
2.5
V
VGE=15V, IC=100A, TC = 125℃
-
2.2
-
V
VGE=15V, IC=200A
-
2.7
-
V
-
664
-
nC
-
123
-
nC
VGE(th)
Gate Threshold Voltage
Collector-Emitter Saturation Voltage
VCE(sat)
Dynamic
Total Gate Charge
Qg
Gate-Emitter Charge
Qge
Gate-Collector Charge
Qgc
-
351
-
nC
Turn-On Delay Time
td(on)
-
331
-
ns
tr
-
163
-
ns
-
581
-
ns
-
155
-
ns
-
13.3
-
mJ
-
mJ
Rise Time
VCE=600V, VGE=±15V, IC= 100A
td(off)
Turn-Off Delay Time
tf
Fall Time
VCE=600V, IC=100A, VGE=±15V,RG=10Ω
Inductive Load, TC = 25℃
Turn-On Switching Loss
Eon
Turn-Off Switching Loss
Eoff
-
10.4
Total Switching Loss
Ets
-
23.7
Turn-On Delay Time
td(on)
-
330
-
ns
tr
-
169
-
ns
-
624
-
ns
-
152
-
ns
-
13.8
-
mJ
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
VCE=600V, IC=100A, VGE=±15V, RG=10Ω
Inductive Load, TC = 125℃
-
mJ
Turn-On Switching Loss
Eon
Turn-Off Switching Loss
Eoff
-
11.3
-
mJ
Total Switching Loss
Ets
-
25.1
-
mJ
Input Capacitance
Cies
-
15148
-
pF
Ouput Capacitance
Coes
-
616
-
pF
Reverse Transfer Capacitance
Cres
-
179
-
pF
Short Circuit Current
ISC
-
540
-
A
VCE=30V, VGE=0V, f=1MHz
VCC=600V, VGE=±15V,
tpsc≤10us
THERMAL CHARACTERISTIC
CHARACTERISTIC
SYMBOL
Max
Junction to Case (IGBT Part, Per 1/2 Module)
Rth(j-c)
0.3
Junction to Case (Diode Part, Per 1/2 Module)
Rth(j-c)
0.49
2018. 01. 09
Revision No : 1
UNIT
℃/W
2/8
GM100HB12BTA
ELECTRICAL CHARACTERISTIC OF DIODE
CHARACTERISTIC
SYMBOL
VF
Diode Forward Voltage
MIN.
TYP.
MAX.
TC=25℃
-
2.2
2.6
TC=125℃
-
2.3
-
TC=25℃
-
174
209
TC=125℃
-
218
-
IF=100A,
TC=25℃
-
59
71
RG=10Ω
TC=125℃
-
74
-
TC=25℃
-
5.77
6.92
TC=125℃
-
9.2
-
IF = 100A
trr
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Current
Diode Reverse Recovery Charge
2018. 01. 09
TEST CONDITION
Irr
Qrr
Revision No : 1
UNIT
V
ns
A
nC
3/8
GM100HB12BTA
Fig 1. Saturation Voltage Characteristics
Fig 2. Saturation Voltage Characteristics
200
Common Emitter
TC=25 C
180
18V
160
14V
140
120
12V
VGE = 20V
100
Common Emitter
VGE = 15V
TC = 25 C
TC = 125 C
180
15V
10V
80
60
40
Collector Current IC (A)
Collector Current IC (A)
200
140
120
100
80
60
40
20
8V
20
160
0
0
Collector - Emitter Voltage VCE (V)
2
3
4
Fig 3. Saturation Voltage vs. Case Temperature
Fig 4. Saturation Voltage vs. VGE
5.0
Collector - Emitter Voltage VCE (V)
Collector - Emitter Voltage VCE (V)
Common Emitter
VGE = 15V
4.0
IC = 100A
3.0
2.0
IC = 200A
1.0
0.0
25
50
75
100
20
Common Emitter
TC =25 C
16
IC = 100A
IC = 50A
12
IC = 200A
8
4
0
0
125
4
8
12
16
Case Temperature TC ( C )
Gate - Emitter Voltage VGE (V)
Fig 5. Saturation Voltage vs. VGE
Fig 6. Capacitance Characteristics
20
100000
Common Emitter
TC =125 C
16
IC = 100A
12
IC = 200A
8
20
Common Emitter
VGE = 0V, f = 1MHZ
TC = 25 C
Cies
IC = 50A
Coes
10000
Cres
1000
4
100
0
0
4
8
12
16
Gate - Emitter Voltage VGE (V)
2018. 01. 09
1
Collector - Emitter Voltage VCE (V)
Capacitance (pF)
Collector - Emitter Voltage VCE (V)
0
Revision No : 1
20
1
10
100
Collector - Emitter Voltage VCE (V)
4/8
GM100HB12BTA
Fig 7. Turn-On Characteristics vs. Gate Resistance
Fig 8. Turn-Off Characteristics vs. Gate Resistance
10000
td(on)
1000
tr
100
Common Emitter
VCC = 600V, VGE = 15V
IC = 100A
TC = 25 C
TC = 125 C
10
0
10
20
30
40
50
60
70
80
Switching Time (ns)
Switching Time (ns)
10000
1000
td(off)
tf
100 Common Emitter
VCC = 600V, VGE = 15V
IC = 100A
TC = 25 C
TC = 125 C
10
90 100 110
0
10
20
30
40
50
60
70
80
Gate Resistance RG (Ω)
Gate Resistance RG (Ω)
Fig 9. Switching Loss vs. Gate Resistance
Fig 10. Turn-On Characteristics vs. Collector Current
1000
100
td(on)
Eoff
10
Common Emitter
VCC = 600V, VGE = 15V
IC = 100A
TC = 25 C
TC = 125 C
1
Switching Time (ns)
Switching Loss (mJ)
Eon
tr
100
10
Common Emitter
VCC = 600V, VGE = 15V
RG = 10Ω
TC = 25 C
TC = 125 C
1
0
10
20
30
40
50
60
70
80
90 100 110
0
30
60
90
120
150
180
210
Gate Resistance RG (Ω)
Collector Current IC (Α)
Fig 11. Turn-Off Characteristics vs. Collector Current
Fig 12. Turn-Off Characteristics vs. Collector Current
10000
100
td(off)
1000
tf
100
Common Emitter
VCC = 300V, VGE = 15V
RG = 10Ω
TC = 25 C
TC = 125 C
10
1
Eon
10
Eoff
1
Common Emitter
VCC = 600V, VGE = 15V
RG = 10Ω
TC = 25 C
TC = 125 C
0.1
0
30
60
90
120
150
Collector Current IC (Α)
2018. 01. 09
Switching Time (ns)
Switching Time (ns)
90 100 110
Revision No : 1
180
210
0
30
60
90
120
150
180
210
Collector Current IC (Α)
5/8
GM100HB12BTA
Fig 14. Reverse Bias Safe Operating Area (Max)
800
15
600
10
400
VGE
5
200
0
VCE
0
-5
-200
-10
Common Emitter
-400
IC = 100Α
TC = 25 C
-15
-200 -100
0
100
200
300
400
500
600
-600
700
250
Collector Current IC (A)
20
Collector - Emitter Voltage VCE (V)
Gate-Emitter Voitage VGE (V)
Fig 13. Gate Charge Characteristics
VGE = 15V
TC = 25 C, RG = 10 Ω
200
150
100
50
0
0
200
400
600
800
1000
1200
1400
Collector - Emitter Voltage VCE (V)
Gate Charge Qg (nC)
Fig15. Transient Thermal Response Curve
Thermal Resistance (Zthjc)
101
100
10-1
IGBT :
DIODE :
10-2
10-5
10-4
10-3
10-2
10-1
100
101
102
Rectangular Pulse Duration (sec)
2018. 01. 09
Revision No : 1
6/8
GM100HB12BTA
Fig 17. Reverse Recovery Current
Reverse Recovery Current IRRM (A)
Fig 16. Forward Characteristics
Forward Current IF (A)
1000
TC = 25 C
100
TC = 125 C
10
1
0
1
2
3
4
Forward Voltage VF (V)
90
80
70
60
50
40
30
Common Emitter
VCC = 600V, VGE = 15V
RG = 10 Ω
TC = 25 C
TC = 125 C
20
10
0
0
30
60
90
120
150
180
210
Forward Current IF (A)
Fig 18. Reverse Recovery Current
Reverse Recovery Time trr (ns)
300
250
200
150
100
Common Emitter
VCC = 600V, VGE = 15V
RG = 10 Ω
TC = 25 C
TC = 125 C
50
0
0
30
60
90
120
150
180
210
Forward Current IF (A)
2018. 01. 09
Revision No : 1
7/8
GM100HB12BTA
Fig 19. Switching Test Circuit
Diode Clamp
/DUT
C
L
G
E
_
+
-10V
Measurement
Pulse
+
_ 600V
C
DUT/
DRIVER
Rg
G
E
VGE = 15V
Fig 20. Definition Switching Time & Loss
GATE VOLTAGE DUT
10% + Vg
Vce
OUT VOLTAGE
AND CURRENT
Vce
Vcc
90% Vge
+ Vge
+ Vg
10%
Ic
Ic
90% Ic
Ipk
Ic
Ic
td(off)
tf
t2
Eoff = Vce Ic dt
t1
ઠ
t2
Eon = Vce Ic dt
t1
tr
td (on)
90% Ic
10% Ic
ઠ
t1
t2
t1
t2
Fig 21. Definition Diode Switching Time
trr
Ic
tx
trr
Ic dt
tx
ઠ
Qrr =
10% Irr
Vcc
Vpk
DIODE
REVERSE
WAVEFORMS
2018. 01. 09
Revision No :1
8/8
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