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Renesas Electronics assumes no liability for damages or losses occurring as a result of your noncompliance with applicable laws and regulations. This document may not be reproduced or duplicated, in any form, in whole or in part, without prior written consent of Renesas Electronics. Please contact a Renesas Electronics sales office if you have any questions regarding the information contained in this document or Renesas Electronics products, or if you have any other inquiries. (Note 1) “Renesas Electronics” as used in this document means Renesas Electronics Corporation and also includes its majorityowned subsidiaries. (Note 2) “Renesas Electronics product(s)” means any product developed or manufactured by or for Renesas Electronics. DATA SHEET MOS FIELD EFFECT TRANSISTOR NP109N04PUJ SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP109N04PUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP109N04PUJ-E1B-AY Note NP109N04PUJ-E2B-AY Note LEAD PLATING PACKING PACKAGE Pure Sn (Tin) Tape 1000 p/reel TO-263 (MP-25ZP) typ. 1.5 g Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on) = 2.3 mΩ MAX. (VGS = 10 V, ID = 55 A) • Low input capacitance Ciss = 6900 pF TYP. • Designed for automotive application and AEC-Q101 qualified (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 40 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) ID(DC) ±110 A ID(pulse) ±440 A PT1 220 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C EAS 360 mJ Storage Temperature Single Avalanche Energy Note2 Repetitive Avalanche Current Note3 IAR 60 A Repetitive Avalanche Energy Note3 EAR 360 mJ Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH 3. Tch ≤ 150°C, RG = 25 Ω THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 0.68 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D19728EJ1V0DS00 (1st edition) Date Published April 2009 NS Printed in Japan 2009 NP109N04PUJ ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 40 V, VGS = 0 V 1 μA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA VGS(th) VDS = VGS, ID = 250 μA 2.0 3.0 4.0 V | yfs | VDS = 5 V, ID = 55 A 45 102 RDS(on) VGS = 10 V, ID = 55 A Input Capacitance Ciss Output Capacitance Gate to Source Threshold Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note S 1.7 2.3 mΩ VDS = 25 V, 6900 10350 pF Coss VGS = 0 V, 930 1400 pF Reverse Transfer Capacitance Crss f = 1 MHz 360 650 pF Turn-on Delay Time td(on) VDD = 20 V, ID = 55 A, 40 90 ns Rise Time tr VGS = 10 V, 20 50 ns Turn-off Delay Time td(off) RG = 0 Ω 85 170 ns Fall Time tf 15 40 ns Total Gate Charge QG VDD = 32 V, 115 180 nC Gate to Source Charge QGS VGS = 10 V, 26 nC QGD ID = 110 A 38 nC VF(S-D) IF = 110 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 110 A, VGS = 0 V, 57 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 105 nC Gate to Drain Charge Body Diode Forward Voltage Note 1.5 V Note Pulsed test TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% BVDSS IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 RL VDD Data Sheet D19728EJ1V0DS td(on) ton tf toff NP109N04PUJ TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 300 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 120 100 80 60 40 20 250 200 150 100 0 50 0 0 25 50 75 100 125 150 175 0 TC - Case Temperature - °C 25 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA ID(pulse) PW 100 1i 0 μs i m i m s y ar nd B io at w n d it e m Li d it e im nL do ke ra ip iss 1 s 1i 0 co Se D er 10 0 1i DC RDS(on) Limited (VGS = 10 V) TC = 25°C Single Pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W 0.1 = ID(DC) w Po ID - Drain Current - A 1000 Rth(ch-A) = 83.3°C/W 100 10 Rth(ch-C) = 0.68°C/W 1 0.1 0.01 Single Pulse 0.001 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D19728EJ1V0DS 3 NP109N04PUJ DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 500 1000 100 ID - Drain Current - A ID - Drain Current - A 400 300 200 100 TA = −55°C 25°C 85°C 150°C 175°C 10 1 0.1 0.01 VGS = 10 V Pulsed VDS = 10 V Pulsed 0.001 0 0 0.2 0.4 0.6 0.8 1 1 3 2 1 VDS = VGS ID = 250 μA 50 100 150 | yfs | - Forward Transfer Admittance - S 4 0 5 1000 TA = −55°C 25°C 85°C 100 10 150°C 175°C VDS = 5 V Pulsed 1 1 200 10 100 1000 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 5 VGS = 10 V Pulsed 4 3 2 1 0 1 10 100 1000 5 ID = 55 A Pulsed 4 3 2 1 0 0 5 10 15 20 VGS - Gate to Source Voltage - V ID - Drain Current - A 4 4 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE -50 3 VGS - Gate to Source Voltage - V VDS - Drain to Source Voltage - V 0 -100 2 Data Sheet D19728EJ1V0DS 25 NP109N04PUJ CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 5 100000 4 3 2 VGS = 10 V ID = 55 A Pulsed 1 Ciss 10000 Coss 1000 Crss VGS = 0 V f = 1 MHz 100 -50 0 50 100 150 200 0.1 1 Tch - Channel Temperature - °C DYNAMIC INPUT/OUTPUT CHARACTERISTICS VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 1000 td(off) td(on) tr tf 10 VDD = 20 V VGS = 10 V RG = 0 Ω 1 0.1 40 16 35 14 VDD = 32 V 20 V 8V 30 25 12 10 20 8 15 6 VGS 10 4 VDS 5 ID = 110 A 0 1 10 100 0 1000 20 40 60 80 100 120 ID - Drain Current - A QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 2 0 140 1000 100 0V VGS = 10 V 10 1 Pulsed trr - Reverse Recovery Time - ns 1000 IF - Diode Forward Current - A 100 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS 100 10 VGS - Gate to Source Voltage - V 0 -100 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 100 10 di/dt = 100 A/μs VGS = 0 V 1 0.1 0 0.5 1 1.5 0.1 1 10 100 1000 IF - Diode Forward Current - A VF(S-D) - Source to Drain Voltage - V Data Sheet D19728EJ1V0DS 5 NP109N04PUJ PACKAGE DRAWING (Unit: mm) 10.0 ±0.3 7.88 MIN. 4.45 ±0.2 1.3 ±0.2 0.5 9.15 ±0.3 8.0 TYP. 4 15.25 ±0.5 No plating 1.35 ±0.3 TO-263 (MP-25ZP) 0.025 to 0.25 .2 0 to 8 ° 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 0.75 ±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Source Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 Data Sheet D19728EJ1V0DS NP109N04PUJ TAPE INFORMATION There are two types (-E1B, -E2B) of taping depending on the direction of the device. Draw-out side Reel side −-* 6;2- −- * 6;2- MARKING INFORMATION NEC 109N04 UJ Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP109N04PUJ should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Recommended Condition Symbol IR60-00-3 Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below P350 Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D19728EJ1V0DS 7 NP109N04PUJ • The information in this document is current as of April, 2009. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. • NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. 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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1