SMD General Purpose Transistor (NPN) MMBT2222A SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals: Weight: Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description MMBT2222A Unit Marking Code 1P VCBO Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6.0 V Collector Current 0.6 A 350 mW 2.8 mW/° C Thermal Resistance, Junction to Ambient 357 ° C /W Junction Temperature 150 °C -55 to +150 °C IC Ptot RθJA TJ TSTG Power Dissipation above 25°C (note 1) Storage Temperature Range Note: (1) Device mounted on FR-4 PCB 1.6’’ x 1.6’’ x 0.06’’ TAITRON COMPONENTS INCORPORATED www.taitroncomponents.com Tel: (800)-TAITRON Fax: (800)-TAITFA (800)-824-8766 (800)-824-8329 (661)-257-6060 (661)-257-6415 Rev. A/AH 2007-11-13 Page 1 of 3 SMD General Purpose Transistor (NPN) MMBT2222A Electrical Characteristics (T Ambient=25ºC unless noted otherwise) Symbol hFE Description D.C. Current Gain Min. Max. Unit Conditions 35 - VCE=10V, IC=0.1mA 50 - VCE=10V, IC=1mA 75 - 35 - 100 300 VCE=10V, IC=10mA VCE=10V, IC=10mA Ta=-55° C VCE=10V, IC=150mA* 40 - VCE=10V, IC=500mA* 50 - VCE=1.0V, IC=150mA* V(BR)CBO Collector-Base Breakdown Voltage 75 - V IC=10µA, IE=0 V(BR)CEO Collector-Emitter Breakdown Voltage* 40 - V IC=10mA, IB=0 V(BR)EBO Emitter-Base Breakdown Voltage 6.0 - V IE=10µA, IC=0 - 0.3 - 1.0 0.6 1.2 - 2.0 10 nA VEB=3V, VCE=60V 10 nA 10 µA VCB=60V, IE=0 VCB=60V, IE=0, Ta=125° C VEB=3V, VCE=60V VCEsat Collector-Emitter Saturation Voltage* VBEsat Base-Emitter Saturation Voltage* V V ICEX Collector Cut-off Current - ICBO Collector Cut-off Current - Base Cut-off Current - 20 nA Emitter Cut-off Current - 10 nA 300 - MHz IBL IEBO fT Current Gain-Bandwidth Product Cobo Output Capacitance - 8.0 pF Cibo Input Capacitance - 25 pF Noise Figure - 4.0 dB Collector Base Time Constant - 150 ps td Delay Time - 10 tr Rise Time - 25 ts Storage Time - 225 tf Fall Time - 60 NF rb’Cc ns IC=150mA, IB=15mA IC=500mA, IB=50mA IC=150mA, IB=15mA IC=500mA, IB=50mA VEB=3V, IC=0 VCE=20V, IC=20mA, f=100MHz VCB=10V, f=1.0MHz, IE=0 VEB=0.5V, f=1.0MHz, IC=0 VCE=10V, IC=100µA, Rs=1kΩ, f=1kHz VCB=20V, IC=20mA, f=31.8 MHz IB1=15mA IC=150mA VCC=30V VEB=0.5V IB1=IB2=15mA IC=150mA VCC=30V *Pulse Test Pulse Width ≤ 300µs, Duty Cycle ≤2.0% Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 2 of 3 SMD General Purpose Transistor (NPN) MMBT2222A Dimensions in mm SOT-23 How to contact us: US HEADQUARTERS 28040 WEST HARRISON PARKWAY, VALENCIA, CA 91355-4162 Tel: (800) TAITRON (800) 824-8766 (661) 257-6060 Fax: (800) TAITFAX (800) 824-8329 (661) 257-6415 Email: [email protected] Http://www.taitroncomponents.com TAITRON COMPONENTS MEXICO, S.A .DE C.V. BOULEVARD CENTRAL 5000 INTERIOR 5 PARQUE INDUSTRIAL ATITALAQUIA, HIDALGO C.P. 42970 MEXICO Tel: +52-55-5560-1519 Fax: +52-55-5560-2190 TAITRON COMPONENTS INCORPORATED REPRESENTAÇÕES DO BRASIL LTDA RUA DOMINGOS DE MORAIS, 2777, 2.ANDAR, SALA 24 SAÚDE - SÃO PAULO-SP 04035-001 BRAZIL Tel: +55-11-5574-7949 Fax: +55-11-5572-0052 TAITRON COMPONENTS INCORPORATED, SHANGHAI REPRESENTATIVE OFFICE METROBANK PLAZA, 1160 WEST YAN’ AN ROAD, SUITE 1503, SHANGHAI, 200052, CHINA Tel: +86-21-5424-9942 Fax: +86-21-5424-9931 Rev. A/AH 2007-11-13 www.taitroncomponents.com Page 3 of 3