CZD41C NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-252 (D-Pack) FEATURES Monolithic Construction With Built–in Base–Emitter Resistors Straight Lead Version in Plastic Sleeves (“–1” Suffix) Designed for General Purpose Amplifier and Low Speed S witching Applications. A B C D GE PACKAGE INFORMATION Package K Leader Size MPQ Collector TO-252 13 inch 2.5K M 2 REF. A B C D E F G H 1 Base 3 Emitter HF N O P J Millimeter Min. Max. 6.35 6.90 4.95 5.50 2.10 2.50 0.43 0.9 6.0 7.5 2.80 REF 5.40 6.40 0.60 1.20 REF. J K M N O P Millimeter Min. Max. 2.30 REF. 0.64 1.14 0.50 1.14 1.3 1.8 0 0.13 0.58REF. ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 100 V Collector to Emitter Voltage VCEO 100 V Emitter to Base Voltage VEBO 5 V Collector Current IC 6 A Collector Power Dissipation PC 1.25 W TJ,TSTG 150, -65 ~ 150 ℃ Junction and Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector-base breakdown voltage V(BR)CBO 100 - - V IC=100µA, IE=0 Collector-emitter breakdown voltage VCEO(SUS) 100 - - V IC=30mA, IB=0 Emitter-base breakdown voltage V(BR)EBO 5 - - V IE=100µA, IC=0 Collector cut-off current ICEO - - 50 µA VCB=60V, IE=0 Emitter cut-off current IEBO - - 0.5 mA VEB=5V, IC=0 30 - - 15 - 75 DC current gain 1 hFE Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency http://www.SeCoSGmbH.com/ 13-Oct-2014 Rev. A 1 1 Test Conditions VCE=4V, IC=0.3A VCE=4V, IC=3A VCE(sat) - - 1.5 V IC=6A, IB=0.6A VBE(on) - - 2 V VCE=4V, IC=6A fT 3 - - MHz VCE=10V, IC= 500mA, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 CZD41C Elektronische Bauelemente NPN Epitaxial Planar Silicon Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 13-Oct-2014 Rev. A Any changes of specification will not be informed individually. Page 2 of 2