Jiangsu M8050 Transistor ï¼ npn ï¼ Datasheet

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-92 Plastic-Encapsulate Transistors
M8050
TRANSISTOR ( NPN )
TO—92
FEATURES
1.EMITTER
Power dissipation
PCM :
0.625
W(Tamb=25℃)
Collector current
ICM :
1
A
Collector-base voltage
V(BR)CBO : 40
V
Operating and storage junction temperature range
T J ,T stg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS(Tamb=25℃
Parameter
Symbol
2. BASE
3. COLLECTOR
1 2 3
unless
Test
otherwise
conditions
specified)
MIN
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100μA , IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO*
IC= 0.1mA , IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO
IE= 100μA, IC=0
6
V
Collector cut-off current
ICBO
VCB= 35V , IE=0
0.1
μA
Collector cut-off
ICEO
VCE= 20V , IB=0
0.1
μA
hFE(1)
VCE=1V, IC=5mA
45
hFE(2)
VCE=1V, IC=100mA
80
hFE(3)
VCE=1V, IC=800mA
40
Collector-emitter saturation voltage
VCE(sat)
IC= 800mA, IB=80mA
0.5
V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB= 80m A
1.2
V
current
DC current gain
Transition frequency
fT
VCE=6V, IC= 20mA , f=30MHz
* Pulse Test :pulse width ≤ 300µs,duty cycle ≤2%。
150
300
MHz
TO-92 PACKAGE OUTLINE DIMENSIONS
D1
E
C
A
A1
D
b
L
φ
e
e1
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min
Max
Min
Max
A
3.300
3.700
0.130
0.146
A1
1.100
1.400
0.043
0.055
b
0.380
0.550
0.015
0.022
c
0.360
0.510
0.014
0.020
D
4.400
4.700
0.173
0.185
D1
3.430
E
4.300
0.135
4.700
0.169
1.270TYP
e
0.185
0.050TYP
e1
2.440
2.640
0.096
0.104
L
14.100
14.500
0.555
0.571
1.600
Ö
0.000
0.380
0.063
0.000
0.015
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