JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors M8050 TRANSISTOR （ NPN ） TO—92 FEATURES 1.EMITTER Power dissipation PCM : 0.625 W（Tamb=25℃） Collector current ICM : 1 A Collector-base voltage V(BR)CBO : 40 V Operating and storage junction temperature range T J ，T stg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol 2. BASE 3. COLLECTOR 1 2 3 unless Test otherwise conditions specified） MIN MAX UNIT Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO* IC= 0.1mA , IB=0 25 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA， IC=0 6 V Collector cut-off current ICBO VCB= 35V , IE=0 0.1 μA Collector cut-off ICEO VCE= 20V , IB=0 0.1 μA hFE(1) VCE=1V, IC=5mA 45 hFE(2) VCE=1V, IC=100mA 80 hFE（3） VCE=1V, IC=800mA 40 Collector-emitter saturation voltage VCE(sat) IC= 800mA, IB=80mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80m A 1.2 V current DC current gain Transition frequency fT VCE=6V, IC= 20mA , f=30MHz * Pulse Test ：pulse width ≤ 300µs，duty cycle ≤2%。 150 300 MHz TO-92 PACKAGE OUTLINE DIMENSIONS D1 E C A A1 D b L φ e e1 Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 3.300 3.700 0.130 0.146 A1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 D 4.400 4.700 0.173 0.185 D1 3.430 E 4.300 0.135 4.700 0.169 1.270TYP e 0.185 0.050TYP e1 2.440 2.640 0.096 0.104 L 14.100 14.500 0.555 0.571 1.600 Ö 0.000 0.380 0.063 0.000 0.015