Zetex BCX53-16 Sot89 pnp silicon planar medium power transistor Datasheet

BCX51
BCX52
BCX53
SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 3 – FEBRUARY 1996
COMPLEMENTARY TYPE –
✪
BCX51 – BCX54
BCX52 – BCX55
BCX53 – BCX56
C
PARTMARKING DETAILS –
BCX51
– AA
BCX51-10 – AC
BCX51-16 – AD
BCX52
– AE
BCX52-10 – AG
BCX52-16 – AM
BCX53
– AH
BCX53-10 – AK
BCX53-16 – AL
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
BCX51
BCX52
BCX53
UNIT
Collector-Base Voltage
V CBO
-45
-60
-100
V
Collector-Emitter Voltage
V CEO
-45
-60
-80
V
Emitter-Base Voltage
V EBO
Peak Pulse Current
I CM
Continuous Collector Current
IC
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
-5
V
-1.5
A
-1
A
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
BCX53
BCX52
BCX51
V (BR)CBO
-100
-60
-45
V
V
V
I C =-100µA
I C =-100µA
I C =-100µA
Collector-Emitter BCX53
Breakdown
BCX52
Voltage
BCX51
V (BR)CEO
-80
-60
-45
V
I C =-10mA*
I C =-10mA*
I C =-10mA*
Emitter-Base
Breakdown Voltage
V (BR)EBO
-5
V
I E =-10µA
Collector Cut-Off Current
I CBO
-0.1
-20
µA
µA
V CB =-30V
V CB =-30V, T amb =150°C
Collector-Base
Breakdown
Voltage
TYP.
MAX. UNIT CONDITIONS.
Emitter Cut-Off Current
I EBO
-20
nA
V EB =-4V
Collector-Emitter
Saturation Voltage
V CE(sat)
-0.5
V
I C =-500mA, I B =-50mA*
Base-Emitter
Turn-On Voltage
V BE(on)
-1.0
V
I C =-500mA, V CE =-2V*
Static Forward Current
Transfer Ratio
h FE
-10
-16
25
40
25
63
100
Transition Frequency
fT
150
Output Capacitance
C obo
IC
IC
IC
IC
IC
250
160
250
25
MHz
I C =-50mA, V CE =-10V,
f=100MHz
pF
V CB =-10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
3 - 34
=-5mA, V CE =-2V*
=-150mA, V CE =-2V*
=-500mA, V CE =-2V*
=-150mA, V CE =-2V*
=-150mA, V CE =-2V*
Similar pages