BCX51 BCX52 BCX53 SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 – FEBRUARY 1996 COMPLEMENTARY TYPE – ✪ BCX51 – BCX54 BCX52 – BCX55 BCX53 – BCX56 C PARTMARKING DETAILS – BCX51 – AA BCX51-10 – AC BCX51-16 – AD BCX52 – AE BCX52-10 – AG BCX52-16 – AM BCX53 – AH BCX53-10 – AK BCX53-16 – AL E C B SOT89 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX51 BCX52 BCX53 UNIT Collector-Base Voltage V CBO -45 -60 -100 V Collector-Emitter Voltage V CEO -45 -60 -80 V Emitter-Base Voltage V EBO Peak Pulse Current I CM Continuous Collector Current IC Power Dissipation at T amb=25°C P tot Operating and Storage Temperature Range T j:T stg -5 V -1.5 A -1 A 1 W -65 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER SYMBOL MIN. BCX53 BCX52 BCX51 V (BR)CBO -100 -60 -45 V V V I C =-100µA I C =-100µA I C =-100µA Collector-Emitter BCX53 Breakdown BCX52 Voltage BCX51 V (BR)CEO -80 -60 -45 V I C =-10mA* I C =-10mA* I C =-10mA* Emitter-Base Breakdown Voltage V (BR)EBO -5 V I E =-10µA Collector Cut-Off Current I CBO -0.1 -20 µA µA V CB =-30V V CB =-30V, T amb =150°C Collector-Base Breakdown Voltage TYP. MAX. UNIT CONDITIONS. Emitter Cut-Off Current I EBO -20 nA V EB =-4V Collector-Emitter Saturation Voltage V CE(sat) -0.5 V I C =-500mA, I B =-50mA* Base-Emitter Turn-On Voltage V BE(on) -1.0 V I C =-500mA, V CE =-2V* Static Forward Current Transfer Ratio h FE -10 -16 25 40 25 63 100 Transition Frequency fT 150 Output Capacitance C obo IC IC IC IC IC 250 160 250 25 MHz I C =-50mA, V CE =-10V, f=100MHz pF V CB =-10V, f=1MHz *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% 3 - 34 =-5mA, V CE =-2V* =-150mA, V CE =-2V* =-500mA, V CE =-2V* =-150mA, V CE =-2V* =-150mA, V CE =-2V*