TI1 CSD16415Q5 N-channel nexfetâ ¢ power mosfet Datasheet

CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
N-Channel NexFET™ Power MOSFET
Check for Samples: CSD16415Q5
FEATURES
1
•
•
•
•
•
•
•
2
PRODUCT SUMMARY
Ultralow Qg and Qgd
Very Low On-Resistance
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
VDS
Drain-to-source voltage
25
V
Qg
Gate charge, total (4.5 V)
21
nC
Qgd
Gate charge, gate-to-drain
rDS(on)
Drain-to-source on-resistance
VGS(th)
Threshold voltage
•
DESCRIPTION
The NexFET™ power MOSFET has been designed
to minimize losses in power conversion applications.
Top View
VGS = 10 V
0.99
mΩ
1.5
V
Package
Media
Qty
Ship
CSD16415Q5
SON 5-mm ×
6-mm plastic
package
13-inch
(33-cm)
reel
2500
Tape and
reel
ABSOLUTE MAXIMUM RATINGS
TA = 25°C unless otherwise stated
VALUE
UNIT
VDS
Drain-to-source voltage
25
V
VGS
Gate-to-source voltage
+16/-12
V
Continuous drain current, TC = 25°C
100
A
Continuous drain current (1)
38
A
IDM
Pulsed drain current, TA = 25°C (2)
200
A
PD
Power dissipation (1)
3.2
W
–55 to 150
°C
500
mJ
ID
S
1
8
D
TJ,
TSTG
Operating junction and storage temperature
range
S
2
7
D
EAS
Avalanche energy, single-pulse
ID = 100 A, L = 0.1 mH, RG = 25 Ω
S
3
6
D
G
4
5
D
D
(1)
(2)
P0094-01
RθJA = 40°C/W on 1-in2 (6.45-cm2) Cu [2 oz. (0.071-mm
thick)] on 0.060-inch (1.52-mm) thick FR4 PCB.
Pulse duration ≤300 μs, duty cycle ≤2%
rDS(ON) vs VGS
Gate Charge
12
5
ID = 40A
4.5
ID = 40A
VDS = 12.5V
10
4
VG − Gate Voltage − V
RDS(on) - On-State Resistance - mΩ
mΩ
ORDERING INFORMATION
Point-of-Load Synchronous Buck Converter
for Applications in Networking, Telecom and
Computing Systems
Optimized for Synchronous FET Applications
3.5
3
2.5
2
1.5
8
6
4
2
1
TC = 25°C
TC = 125ºC
0.5
0
nC
1.5
Device
APPLICATIONS
•
5.2
VGS = 4.5 V
0
0
0
1
2
3
4
5
6
7
VGS - Gate-to- Source Voltage - V
8
9
10
20
30
40
50
60
10
Qg − Gate Charge − nC
G003
1
2
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
NexFET is a trademark of Texas Instruments.
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of the Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2011, Texas Instruments Incorporated
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP MAX
UNIT
Static Characteristics
BVDSS
Drain-to-source voltage
VGS = 0 V, ID = 250 μA
IDSS
Drain-to-source leakage current
VGS = 0 V, VDS = 20 V
IGSS
Gate-to-source leakage current
VDS = 0 V, VGS = –12 V to 16 V
VGS(th)
Gate-to-source threshold voltage
VDS = VGS, ID = 250 μA
rDS(on)
Drain-to-source on-resistance
gfs
Transconductance
25
1.2
V
1
μA
100
nA
1.5
1.9
V
VGS = 4.5 V, ID = 40 A
1.5
1.8
mΩ
VGS = 10 V, ID = 40 A
0.99
1.15
mΩ
VDS = 15 V, ID = 40 A
168
S
Dynamic Characteristics
CISS
Input capacitance
COSS
Output capacitance
CRSS
Reverse transfer capacitance
175
230
pF
Rg
Series gate resistance
1.2
2.4
Ω
Qg
Gate charge total (4.5 V)
21
29
nC
Qgd
Gate charge, gate-to-drain
5.2
nC
Qgs
Gate charge, gate-to-source
8.3
nC
Qg(th)
Gate charge at Vth
4.8
nC
QOSS
Output charge
55
nC
td(on)
Turnon delay time
16.6
ns
tr
Rise time
30
ns
td(off)
Turnoff delay time
20
ns
tf
Fall time
12.7
ns
VGS = 0 V, VDS = 12.5 V, f = 1 MHz
VDS = 12.5 V, ID = 40 A
VDS = 15 V, VGS = 0 V
VDS = 12.5 V, VGS = 4.5 V, ID = 40 A
RG = 2 Ω
3150 4100
pF
2530 3300
pF
Diode Characteristics
VSD
Diode forward voltage
IS = 40 A, VGS = 0 V
Qrr
Reverse recovery charge
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs
0.85
72
1
nC
V
trr
Reverse recovery time
VDD = 15 V, IF = 40 A, di/dt = 300 A/μs
45
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
R θJC
Thermal resistance, junction-to-case (1)
R θJA
Thermal resistance, junction-to-ambient (1)
(1)
(2)
2
(2)
TYP
MAX
UNIT
1.1
°C/W
50
°C/W
RθJC is determined with the device mounted on a 1-inch (2.54-cm) square, 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch
(3.81-cm × 3.81-cm), 0.060-inch (1.52-mm) thick FR4 board. RθJC is specified by design, whereas RθJA is determined by the user’s
board design.
Device mounted on FR4 material with 1 inch2 (6.45 cm2) of 2-oz. (0.071-mm thick) Cu.
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
GATE
GATE
Source
N-Chan 5x6 QFN TTA MIN Rev3
N-Chan 5x6 QFN TTA MAX Rev3
Max RθJA = 50°C/W
when mounted on 1
inch2 (6.45 cm2) of
2-oz. (0.071-mm thick)
Cu.
Source
Max RθJA = 121°C/W
when mounted on
minimum pad area of
2-oz. (0.071-mm thick)
Cu.
DRAIN
DRAIN
M0137-02
M0137-01
Text
and
Text
and
Text
and
Text
and
Text and br Added for Spacing
br
br
br
br
Added
Added
Added
Added
for
for
for
for
Spacing
Spacing
Spacing
Spacing
TYPICAL MOSFET CHARACTERISTICS
(TA = 25°C unless otherwise stated)
ZqJA – Normalized Thermal Impedance
10
1
0.5
0.3
Duty Cycle = t1/t2
0.1
0.1
0.05
0.01
P
t1
0.02
0.01
t2
RqJA = 97°C/W (min Cu)
TJ = P ´ ZqJA ´ RqJA
Single Pulse
0.001
0.001
0.01
0.1
1
10
100
1k
tp – Pulse Duration – s
G012
Figure 1. Transient Thermal Impedance
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
3
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
100
90
80
ID − Drain Current − A
ID − Drain Current − A
80
VGS = 3V
70
VGS = 3.5V
60
50
VGS = 4.5V
40
30
VGS = 2.5V
70
50
40
20
10
1.0
1.5
2.0
2.5
TC = −55°C
0
1.5
3.0
VDS − Drain to Source Voltage − V
TC = 25°C
30
10
0.5
TC = 125°C
60
20
0
0.0
2.0
2.5
3.0
3.5
VGS − Gate to Source Voltage − V
G001
G002
Figure 2. Saturation Characteristics
Figure 3. Transfer Characteristics
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
12
9
ID = 40A
VDS = 12.5V
f = 1MHz
VGS = 0V
8
C − Capacitance − nF
10
VG − Gate Voltage − V
VDS = 5V
90
VGS = 10V
8
6
4
7
6
COSS = CDS + CGD
5
CISS = CGD + CGS
4
3
2
CRSS = CGD
2
1
0
0
0
10
20
30
40
50
60
Qg − Gate Charge − nC
0
G003
20
Figure 5. Capacitance
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
25
G004
5
ID = 250µA
1.8
RDS(on) - On-State Resistance - mΩ
VGS(th) − Threshold Voltage − V
15
Figure 4. Gate Charge
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
−25
25
75
125
175
TC − Case Temperature − °C
ID = 40A
4.5
4
3.5
3
2.5
2
1.5
1
TC = 25°C
TC = 125ºC
0.5
0
0
1
2
3
4
5
6
7
8
9
10
VGS - Gate-to- Source Voltage - V
G005
Figure 6. Threshold Voltage vs. Temperature
4
10
VDS − Drain to Source Voltage − V
2.0
0.0
−75
5
Figure 7. On-Resistance vs. Gate Voltage
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
TYPICAL MOSFET CHARACTERISTICS (continued)
(TA = 25°C unless otherwise stated)
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
100
1.4
ID = 40A
VGS = 10V
ISD − Source to Drain Current − A
Normalized On-State Resistance
1.6
1.2
1.0
0.8
0.6
0.4
0.2
0.0
−75
10
1
0.1
0.001
25
75
125
175
0.0
0.4
0.6
0.8
1.0
VSD − Source to Drain Voltage − V
Figure 8. On-Resistance vs. Temperature
Figure 9. Typical Diode Forward Voltage
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
G008
1k
I(AV) − Peak Avalanche Current − A
ID − Drain Current − A
0.2
G007
1k
100
1ms
10
10ms
100ms
Area Limited
by RDS(on)
1s
0.1
0.01
0.01
TC = 25°C
0.01
0.0001
−25
TC − Case Temperature − °C
1
TC = 125°C
Single Pulse
RqJA = 97°C/W (min Cu)
0.1
DC
1
10
10
TC = 125°C
1
0.001
100
VDS − Drain To Source Voltage − V
TC = 25°C
100
0.01
0.1
1
10
100
t(AV) − Time in Avalanche − ms
G009
Figure 10. Maximum Safe Operating Area
G010
Figure 11. Single-Pulse Unclamped Inductive Switching
TEXT ADDED FOR SPACING
TEXT ADDED FOR SPACING
120
ID − Drain Current − A
100
80
60
40
20
0
−50
−25
0
25
50
75
100
125
TC − Case Temperature − °C
150
175
G011
Figure 12. Maximum Drain Current vs. Temperature
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
5
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
MECHANICAL DATA
Q5 Package Dimensions
K
L
L
c1
E1
E2
b
D2
4
4
5
5
e
3
6
3
6
E
D1
7
7
2
2
8
8
1
1
q
Top View
Bottom View
Side View
c
E1
A
q
Front View
M0140-01
DIM
MILLIMETERS
MAX
MIN
MAX
A
0.950
1.050
0.037
0.039
b
0.360
0.460
0.014
0.018
c
0.150
0.250
0.006
0.010
c1
0.150
0.250
0.006
0.010
D1
4.900
5.100
0.193
0.201
D2
4.320
4.520
0.170
0.178
E
4.900
5.100
0.193
0.201
E1
5.900
6.100
0.232
0.240
E2
3.920
4.12
0.154
e
6
INCHES
MIN
1.27 TYP
K
0.760
L
0.510
θ
0.00
0.162
0.050
0.030
0.710
Submit Documentation Feedback
0.020
0.028
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
CSD16415Q5
SLPS259 – DECEMBER 2011
www.ti.com
Figure 13. Recommended PCB Pattern
DIM
F1
F7
F3
8
1
F2
F11
F5
F9
5
4
F6
MILLIMETERS
INCHES
MIN
MAX
MIN
MAX
F1
6.205
6.305
0.244
0.248
F2
4.460
4.560
0.176
0.180
F3
4.460
4.560
0.176
0.180
F4
0.650
0.700
0.026
0.028
F5
0.620
0.670
0.024
0.026
F6
0.630
0.680
0.025
0.027
F7
0.700
0.800
0.028
0.031
F8
0.650
0.700
0.026
0.028
F9
0.620
0.670
0.024
0.026
F10
4.900
5.000
0.193
0.197
F11
4.460
4.560
0.176
0.180
F8
F4
F10
M0139-01
For recommended circuit layout for PCB designs, see application note SLPA005 – Reducing Ringing Through
PCB Layout Techniques.
K0
4.00 ±0.10 (See Note 1)
0.30 ±0.05
2.00 ±0.05
+0.10
–0.00
12.00 ±0.30
Ø 1.50
1.75 ±0.10
Q5 Tape and Reel Information
5.50 ±0.05
B0
R 0.30 MAX
A0
8.00 ±0.10
Ø 1.50 MIN
A0 = 6.50 ±0.10
B0 = 5.30 ±0.10
K0 = 1.40 ±0.10
R 0.30 TYP
M0138-01
Notes:
1. 10 sprocket hole pitch cumulative tolerance ±0.2
2. Camber not to exceed 1 mm IN 100 mm, noncumulative over 250 mm
3. Material:black static dissipative polystyrene
4. All dimensions are in mm (unless otherwise specified)
5. A0 and B0 measured on a plane 0.3 mm above the bottom of the pocket
6. MSL1 260°C (IR and Convection) PbF Reflow Compatible
Submit Documentation Feedback
Copyright © 2011, Texas Instruments Incorporated
Product Folder Link(s): CSD16415Q5
7
PACKAGE OPTION ADDENDUM
www.ti.com
24-Dec-2011
PACKAGING INFORMATION
Orderable Device
CSD16415Q5
Status
(1)
ACTIVE
Package Type Package
Drawing
SON
DQH
Pins
Package Qty
8
2500
Eco Plan
(2)
Pb-Free (RoHS
Exempt)
Lead/
Ball Finish
CU SN
MSL Peak Temp
(3)
Samples
(Requires Login)
Level-1-260C-UNLIM
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Dec-2011
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
CSD16415Q5
Package Package Pins
Type Drawing
SON
DQH
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.8
Pack Materials-Page 1
6.5
B0
(mm)
K0
(mm)
P1
(mm)
5.3
1.4
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
20-Dec-2011
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
CSD16415Q5
SON
DQH
8
2500
335.0
335.0
32.0
Pack Materials-Page 2
IMPORTANT NOTICE
Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements,
and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should
obtain the latest relevant information before placing orders and should verify that such information is current and complete. All products are
sold subject to TI’s terms and conditions of sale supplied at the time of order acknowledgment.
TI warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with TI’s standard
warranty. Testing and other quality control techniques are used to the extent TI deems necessary to support this warranty. Except where
mandated by government requirements, testing of all parameters of each product is not necessarily performed.
TI assumes no liability for applications assistance or customer product design. Customers are responsible for their products and
applications using TI components. To minimize the risks associated with customer products and applications, customers should provide
adequate design and operating safeguards.
TI does not warrant or represent that any license, either express or implied, is granted under any TI patent right, copyright, mask work right,
or other TI intellectual property right relating to any combination, machine, or process in which TI products or services are used. Information
published by TI regarding third-party products or services does not constitute a license from TI to use such products or services or a
warranty or endorsement thereof. Use of such information may require a license from a third party under the patents or other intellectual
property of the third party, or a license from TI under the patents or other intellectual property of TI.
Reproduction of TI information in TI data books or data sheets is permissible only if reproduction is without alteration and is accompanied
by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alteration is an unfair and deceptive
business practice. TI is not responsible or liable for such altered documentation. Information of third parties may be subject to additional
restrictions.
Resale of TI products or services with statements different from or beyond the parameters stated by TI for that product or service voids all
express and any implied warranties for the associated TI product or service and is an unfair and deceptive business practice. TI is not
responsible or liable for any such statements.
TI products are not authorized for use in safety-critical applications (such as life support) where a failure of the TI product would reasonably
be expected to cause severe personal injury or death, unless officers of the parties have executed an agreement specifically governing
such use. Buyers represent that they have all necessary expertise in the safety and regulatory ramifications of their applications, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products
and any use of TI products in such safety-critical applications, notwithstanding any applications-related information or support that may be
provided by TI. Further, Buyers must fully indemnify TI and its representatives against any damages arising out of the use of TI products in
such safety-critical applications.
TI products are neither designed nor intended for use in military/aerospace applications or environments unless the TI products are
specifically designated by TI as military-grade or "enhanced plastic." Only products designated by TI as military-grade meet military
specifications. Buyers acknowledge and agree that any such use of TI products which TI has not designated as military-grade is solely at
the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use.
TI products are neither designed nor intended for use in automotive applications or environments unless the specific TI products are
designated by TI as compliant with ISO/TS 16949 requirements. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, TI will not be responsible for any failure to meet such requirements.
Following are URLs where you can obtain information on other Texas Instruments products and application solutions:
Products
Applications
Audio
www.ti.com/audio
Automotive and Transportation www.ti.com/automotive
Amplifiers
amplifier.ti.com
Communications and Telecom www.ti.com/communications
Data Converters
dataconverter.ti.com
Computers and Peripherals
www.ti.com/computers
DLP® Products
www.dlp.com
Consumer Electronics
www.ti.com/consumer-apps
DSP
dsp.ti.com
Energy and Lighting
www.ti.com/energy
Clocks and Timers
www.ti.com/clocks
Industrial
www.ti.com/industrial
Interface
interface.ti.com
Medical
www.ti.com/medical
Logic
logic.ti.com
Security
www.ti.com/security
Power Mgmt
power.ti.com
Space, Avionics and Defense
www.ti.com/space-avionics-defense
Microcontrollers
microcontroller.ti.com
Video and Imaging
www.ti.com/video
RFID
www.ti-rfid.com
OMAP Mobile Processors
www.ti.com/omap
Wireless Connectivity
www.ti.com/wirelessconnectivity
TI E2E Community Home Page
e2e.ti.com
Mailing Address: Texas Instruments, Post Office Box 655303, Dallas, Texas 75265
Copyright © 2012, Texas Instruments Incorporated
Similar pages