TVU150 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 BAL FLG(C) The ASI TVU150 is Designed for .080x45° A B FULL R (4X).060 R FEATURES: E M D C • Input Matching Network • • Omnigold™ Metalization System .1925 F H G N I L J MAXIMUM RATINGS 25 A IC VCES 60 V VEBO 3.5 V PDISS 300 W @ TC = 25 OC O DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 -65 C to +200 C TSTG -65 OC to +150 OC θ JC O C .120 / 3.05 D .380 / 9.65 .390 / 9.91 E .780 / 19.81 .820 / 20.83 .130 / 3.30 F .435 / 11.05 G 1.090 / 27.69 H 1.335 / 33.91 1.345 / 34.16 I .003 / 0.08 .007 / 0.18 J .060 / 1.52 .070 / 1.78 K .082 / 2.08 .100 / 2.54 M .395 / 10.03 .407 / 10.34 N .850 / 21.59 .870 / 22.10 .205 / 5.21 L O TJ MAXIMUM .210 / 5.33 B 28 V VCEO K ORDER CODE: ASI10652 0.55 C/W CHARACTERISTICS SYMBOL O TC = 25 C NONETEST CONDITIONS BVCEO IC = 100 mA BVCER IC = 100 mA BVCES MINIMUM TYPICAL MAXIMUM UNITS 26 30 V 35 40 V IC = 50 mA 60 80 V BVEBO IE = 10 mA 3.5 4.0 V ICES VCE = 30 V hFE VCE = 5.0 V COB VCB = 26 V PG IMD1 Load Mismatch VCC = 26 V POUT = 40 W RBE = 200 Ω IC = 1.0 A 30 45 f = 1.0 MHz ICQ = 2 X 3000 mA f = 860 MHz 11 -52 VCC = 26 V ICQ = 2 X 150 mA POUT = 150 W PEP VSWR = 5:1 @ all phase angles mA 120 --- 75 pF 9.0 dB dBc No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 10 REV. A 1/1