ASI ASI10652 Npn silicon rf power transistor Datasheet

TVU150
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
PACKAGE STYLE .400 BAL FLG(C)
The ASI TVU150 is Designed for
.080x45°
A
B
FULL R
(4X).060 R
FEATURES:
E
M
D
C
• Input Matching Network
•
• Omnigold™ Metalization System
.1925
F
H
G
N
I
L
J
MAXIMUM RATINGS
25 A
IC
VCES
60 V
VEBO
3.5 V
PDISS
300 W @ TC = 25 OC
O
DIM
MINIMUM
inches / mm
inches / mm
A
.220 / 5.59
.230 / 5.84
-65 C to +200 C
TSTG
-65 OC to +150 OC
θ JC
O
C
.120 / 3.05
D
.380 / 9.65
.390 / 9.91
E
.780 / 19.81
.820 / 20.83
.130 / 3.30
F
.435 / 11.05
G
1.090 / 27.69
H
1.335 / 33.91
1.345 / 34.16
I
.003 / 0.08
.007 / 0.18
J
.060 / 1.52
.070 / 1.78
K
.082 / 2.08
.100 / 2.54
M
.395 / 10.03
.407 / 10.34
N
.850 / 21.59
.870 / 22.10
.205 / 5.21
L
O
TJ
MAXIMUM
.210 / 5.33
B
28 V
VCEO
K
ORDER CODE: ASI10652
0.55 C/W
CHARACTERISTICS
SYMBOL
O
TC = 25 C
NONETEST CONDITIONS
BVCEO
IC = 100 mA
BVCER
IC = 100 mA
BVCES
MINIMUM TYPICAL MAXIMUM
UNITS
26
30
V
35
40
V
IC = 50 mA
60
80
V
BVEBO
IE = 10 mA
3.5
4.0
V
ICES
VCE = 30 V
hFE
VCE = 5.0 V
COB
VCB = 26 V
PG
IMD1
Load
Mismatch
VCC = 26 V
POUT = 40 W
RBE = 200 Ω
IC = 1.0 A
30
45
f = 1.0 MHz
ICQ = 2 X 3000 mA
f = 860 MHz
11
-52
VCC = 26 V ICQ = 2 X 150 mA POUT = 150 W PEP
VSWR = 5:1 @ all phase angles
mA
120
---
75
pF
9.0
dB
dBc
No Degradation in Output
Power
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
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REV. A
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