Dc BU407 Technical specifications of npn epitaxial planar transistor Datasheet

DC COMPONENTS CO., LTD.
BU407
DISCRETE SEMICONDUCTORS
R
TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in TV horizontal output and
switching applications.
TO-220AB
Pinning
.405(10.28)
.380(9.66)
1 = Base
2 = Collector
3 = Emitter
.185(4.70)
.173(4.40)
Φ.151
Typ
.055(1.39)
Φ(3.83)
.045(1.15)
.295(7.49)
.220(5.58)
.625(15.87)
.570(14.48)
Absolute Maximum Ratings(TA=25oC)
Characteristic
Symbol
Rating
Collector-Emitter Voltage
VCEO
150
V
Emitter-Base Voltage
VEBO
6
V
Collector Current
IC
7
A
Base Current
IB
4
A
Total Power Dissipation(TC=25 C)
PD
60
W
Junction Temperature
TJ
+150
o
-55 to +150
o
o
Storage Temperature
TSTG
.350(8.90)
.330(8.38)
.640
Typ
(16.25)
1 2 3
Unit
.562(14.27)
.500(12.70)
.055(1.40)
.045(1.14)
.037(0.95)
.030(0.75)
.100
Typ
(2.54)
.024(0.60)
.014(0.35)
C
Dimensions in inches and (millimeters)
C
Electrical Characteristics
o
(Ratings at 25 C ambient temperature unless otherwise specified)
Characteristic
Collector-Emitter Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCEO
150
-
-
V
Test Conditions
IC=100mA, IB=0
Collector Cutoff Current
ICES
-
-
5
mA
VCE=400V
Emitter Cutoff Current
IEBO
-
-
1
mA
VEB=6V, IC=0
Collector-Emitter Saturation Voltage(1)
VCE(sat)
-
-
1
V
IC=5A, IB=0.5A
Base-Emitter Saturation Voltage(1)
VBE(sat)
-
-
1.2
V
IC=5A, IB=0.5A
DC Current Gain(1)
Transition Frequency
(1)Pulse Test: Pulse Width
hFE1
25
-
-
-
IC=0.5A, VCE=5V
hFE2
35
-
200
-
IC=2A, VCE=5V
hFE3
10
-
-
-
IC=2A, VCE=5V
10
-
-
MHz
fT
380µs, Duty Cycle 2%
Classification of hFE2
Rank
B
C
D
Range
35~85
75~125
115~200
IC=0.5A, VCE=10V, f=1MHz
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