DC COMPONENTS CO., LTD. BU407 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for use in TV horizontal output and switching applications. TO-220AB Pinning .405(10.28) .380(9.66) 1 = Base 2 = Collector 3 = Emitter .185(4.70) .173(4.40) Φ.151 Typ .055(1.39) Φ(3.83) .045(1.15) .295(7.49) .220(5.58) .625(15.87) .570(14.48) Absolute Maximum Ratings(TA=25oC) Characteristic Symbol Rating Collector-Emitter Voltage VCEO 150 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A Base Current IB 4 A Total Power Dissipation(TC=25 C) PD 60 W Junction Temperature TJ +150 o -55 to +150 o o Storage Temperature TSTG .350(8.90) .330(8.38) .640 Typ (16.25) 1 2 3 Unit .562(14.27) .500(12.70) .055(1.40) .045(1.14) .037(0.95) .030(0.75) .100 Typ (2.54) .024(0.60) .014(0.35) C Dimensions in inches and (millimeters) C Electrical Characteristics o (Ratings at 25 C ambient temperature unless otherwise specified) Characteristic Collector-Emitter Breakdown Voltage Symbol Min Typ Max Unit BVCEO 150 - - V Test Conditions IC=100mA, IB=0 Collector Cutoff Current ICES - - 5 mA VCE=400V Emitter Cutoff Current IEBO - - 1 mA VEB=6V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 1 V IC=5A, IB=0.5A Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=5A, IB=0.5A DC Current Gain(1) Transition Frequency (1)Pulse Test: Pulse Width hFE1 25 - - - IC=0.5A, VCE=5V hFE2 35 - 200 - IC=2A, VCE=5V hFE3 10 - - - IC=2A, VCE=5V 10 - - MHz fT 380µs, Duty Cycle 2% Classification of hFE2 Rank B C D Range 35~85 75~125 115~200 IC=0.5A, VCE=10V, f=1MHz