UTC MJE13007 Npn bipolar power transistor for switching power supply application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJE13007
NPN SILICON TRANSISTOR
NPN BIPOLAR POWER
TRANSISTOR FOR SWITCHING
POWER SUPPLY
APPLICATIONS
„
DESCRIPTION
The UTC MJE13007 is designed for high-voltage, high-speed
power switching inductive circuits where fall time is critical. It is
particularly suited for 115 and 220 V switch mode applications.
„
FEATURES
* VCEO(SUS) 400V
* 700V Blocking Capability
Lead-free:
MJE13007L
Halogen-free:MJE13007G
„
ORDERING INFORMATION
Normal
MJE13007-TA3-T
MJE13007-TF3- T
Ordering Number
Lead Free
MJE13007L-TA3-T
MJE13007L-TF3- T
Halogen Free
MJE13007G-TA3-T
MJE13007G-TF3- T
www.unisonic.com.tw
Copyright © 2010 Unisonic Technologies Co., Ltd
Package
TO-220
TO-220F
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tube
1 of 6
QW-R203-019.F
MJE13007
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Voltage
Collector Current
Base Current
Emitter Current
Continuous
Peak (1)
Continuous
Peak (1)
SYMBOL
VCEO
VCBO
VEBO
IC
ICM
IB
IBM
RATINGS
400
700
9.0
8.0
16
4.0
8.0
UNIT
V
V
V
A
A
A
A
Continuous
IE
12
A
IEM
24
A
Total Device Dissipation
PD
80
W
Operating and Storage Junction Temperature
TJ, TSTG
-55~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
Peak (1)
TC = 25°C
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
UNIT
Junction to Case
θJC
1.56
°C/W
Junction to Ambient
°C/W
62.5
θJA
Note 1: Pulse Test: Pulse Width = 5.0 ms, Duty Cycle≤10%.
Measurement made with thermocouple contacting the bottom insulated mounting surface of the package
(in a location beneath the die), the device mounted on a heatsink with thermal grease applied at a
mounting torque of 6 to 8•lbs.
„
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise noted)
PARAMETER
Collector-Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
SYMBOL
TEST CONDITIONS
VCEO(SUS) IC=10mA, IB=0
VCES=700V
ICBO
VCES=700V, TC=125°C
IEBO
VEB=9.0V, IC=0
hFE1
IC=2.0A, VCE=5.0V
hFE2
IC=5.0A, VCE=5.0V
IC=2.0A, IB=0.4A
IC=5.0A, IB=1.0A
VCE(SAT)
IC=8.0A, IB=2.0A
IC=5.0A, IB=1.0A, TC=100°C
IC=2.0A, IB=0.4A
VBE(SAT) IC=5.0A, IB=1.0A
IC=5.0A, IB=1.0A, TC=100°C
fT
IC=500mA, VCE=10V, f=1.0 MHz
Cob
VCB=10V, IE=0, f=0.1MHz
Current-Gain-Bandwidth Product
Output Capacitance
Resistive Load (Table 1)
Delay Time
tD
VCC=125V, IC=5.0A,
Rise Time
tR
IB1=IB2=1.0A, tp=25μs,
Storage Time
tS
Duty Cycle≤1.0%
Fall Time
tF
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
400
TYP
8.0
5.0
4.0
14
80
0.025
0.5
1.8
0.23
MAX UNIT
V
0.1
mA
1.0
mA
100
μA
40
30
1.0
V
2.0
V
3.0
V
3.0
V
1.2
V
1.6
V
1.5
V
MHz
pF
0.1
1.5
3.0
0.7
μs
μs
μs
μs
2 of 6
QW-R203-019.F
MJE13007
„
NPN SILICON TRANSISTOR
TYPICAL THERMAL RESPONSE
Figure1. Typical Thermal Response
1
0.7 D=0.5
0.5
D=0.2
0.2
D=0.1
0.1
D=0.05
0.07
0.05 D=0.02
0.02
D=0.01
0.01
0.01
0.02
RθJC(t)=r(t)RθJC
RθJC=1.56°C/W MAX
D CURVES APPLY FOR
POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk)-TC=P(pk)RθJC (t)
P(pk)
t1
t2
DUTY CYCLE, D=t1/t2
SINGLE PULSE
0.05
0.1
0.2
0.5
1
2
5
10
20
50
100
200
500
10k
Time, t (msec)
There are two limitations on the power handling ability of a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate.
The data of Figure 7 is based on TC = 25°C; TJ(pk) is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10% but must be debated when TC≥25°C. Second breakdown limitations do
not debate the same as thermal limitations. Allowable current at the voltages shown on Figure 7 may be found at any
case temperature by using the appropriate curve on Figure 9.
At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
Use of reverse biased safe operating area data (Figure 8) is discussed in the applications information section.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 6
QW-R203-019.F
MJE13007
NPN SILICON TRANSISTOR
Table 1. Test Conditions for Dynamic Performance
RESISTIVE
SWITCHING
CIRCUIT VALUES
TEST CIRCUITS
REVERSE BIAS SAFE OPERATING AREA AND INDUCTIVE SWITCHING
Inductive
Switching
L=20mH
L=10mH
RB2=0
RB2=8
VCC=15V
VCC=20V
IC(pk)=100mA RB1 selected
for desired IB1
BVCEO (SUS)
RBSOA
L=500mH
RB2=0
VCC=15Volts
RB1 selected
for desired IB1
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
VCC=125V
RC=25Ω
D1=1N5820 OR EQUIV
4 of 6
QW-R203-019.F
MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Figure 2. Base-Emitter Saturation Voltage
IC/IB=5
1.2
1
IC=-40°C
0.8
25°C
100°C
0.6
0.4
0.01 0.02 0.05 0.1 0.2 0.5 1
2
Collector-Emitte Saturation Voltage,
VCE(SAT) (V)
Base-Emitte Saturation Voltage,
VBE(SAT) (V)
1.4
Figure 3. Collector-Emitter Saturation Voltage
5 10
10
IC/IB=5
5
2
1
0.5
0.2
IC=-40°C
0.1
25°C
0.05
100°C
0.02
0.01
0.01 0.02 0.05 0.1 0.2 0.5 1
Collector Current, IC (A)
DC Current Gain, hFE
Collector-Emitter Voltage,
VCE (V)
Collector Current, IC (A)
Figure 7. Maximum Forward Bias Safe
Operating Area
Figure 6. Capacitance
10000
TJ=25°C
Cib
Collector Current, IC (A)
Capacitance, C (pF)
5 10
2
1000
Cob
100
10
0.1
1
10
100
1000
Reverse Voltage,VR (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
100
50
20
10
Extended SOA@1μs,10μs
1μs
10μs
5
2 TC=25°C
1ms
DC
1
5ms
0.5
0.2
Bonding wire limit
0.1
Thermal limit
0.05
Second breakdown limit
0.02
0.01
10
curves apply below
rated vceo
20 30 50 70 100 200 300 500 1000
Collector-Emitter Voltage, VCE (V)
5 of 6
QW-R203-019.F
MJE13007
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Figure 8. Maximum Reverse Bias
Switching Safe Operating Area
Figure 9. Forward Bias Power Derating
1
8
6
4
TC≤100°C
GAIN≥4
LC=500μH
VBE(OFF)
-5V
2
Power Derating Factor
Collector Current, IC (A)
10
0V
-2V
0
0 100 200 300 400 500 600 700 800
0.8
0.6
0.4
THERMAL
DERATING
0.2
0
20
Collector-Emitter Clamp Voltage, VCEV (V)
SECOND
BREAKDOWN
DERATING
40
60
80
100 120 140 160
Time, t (ns)
Time, t (ns)
Case Temperature, TC (°C)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
6 of 6
QW-R203-019.F
Similar pages