Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 1/10 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN3820F3 Features • Low Gate Charge • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package Symbol BVDSS 100V ID 26A VGS=10V, ID=18A 64mΩ VGS=4V, ID=10A 65mΩ RDSON(TYP) Outline MTN3820F3 TO-263 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @VGS=10V, TC=25°C Continuous Drain Current @VGS=10V, TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.14mH, ID=20A, RG=25Ω Repetitive Avalanche Energy@ L=0.1mH (Note 2) TC=25℃ Power Dissipation TA=25℃ Operating Junction and Storage Temperature VDS VGS ID ID IDM IAS EAS EAR 100 ±20 26 15 104 20 35 5.6 56 2 -55~+150 PD Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTN3820F3 CYStek Product Specification Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 2/10 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.2 62.5 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) GFS IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 100 1 - 1.7 18 64 65 2.5 ±100 1 25 80 80 V V S nA μA μA 23 7 7 18 9.5 75 30 2964 62.3 56.7 - 120 320 26 104 1.3 - Dynamic *Qg *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Source-Drain Diode *IS *ISM *VSD *trr *Qrr - mΩ Test Conditions VGS=0V, ID=250μA VDS = VGS, ID=250μA VDS =10V, ID=18A VGS=±20 VDS =100V, VGS =0V VDS =100V, VGS =0V, Tj=125°C VGS =10V, ID=18A VGS =4V, ID=10A nC ID=13A, VDS=80V, VGS=10V ns VDS=50V, ID=13A, VGS=10V, RG=6Ω pF VGS=0V, VDS=25V, f=1MHz A V ns nC IF=IS, VGS=0V IF=26A, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN3820F3 MTN3820F3 Package TO-263 (RoHS compliant package) Shipping 800 pcs / Tape & Reel CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 3/10 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 140 10V 9V 8V 7V 6V 5V 4.5V 4.0V 3.5V Drain Current - ID(A) 20 15 Drain-Source Breakdown Voltage BVDSS(V) 25 VGS=3V 10 5 VGS=2.5V 130 120 110 ID=250μA, VGS=0V 100 0 0 2 4 6 Drain-Source Voltage -VDS(V) -75 8 75 125 175 Reverse Drain Current vs Source-Drain Voltage 1000 1.2 Source-Drain Voltage-VSD(V) Static Drain-Source On-State Resistance-RDS(on)(mΩ) 25 Junction Temperature-Tj(°C) Static Drain-Source On-State resistance vs Drain Current VGS=2.5V VGS=3V 100 3.5V 4V 10V 10 0.001 1 Tj=25°C 0.8 0.6 Tj=125°C 0.4 0.2 0.01 0.1 1 Drain Current-ID(A) 10 0 100 Static Drain-Source On-State ResistanceRDS(ON)(mΩ) 300 260 220 180 140 ID=18A ID=10A 100 2 10 4 6 8 Reverse Drain Current -IDR(A) Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage Static Drain-Source On-State Resistance-RDS(ON)(mΩ) -25 60 200 VGS=10V, ID=18A 150 100 VGS=4V, ID=10A 50 0 20 0 MTN3820F3 2 4 6 8 Gate-Source Voltage-VGS(V) 10 -60 -20 20 60 100 140 Junction Temperature-Tj(°C) 180 CYStek Product Specification Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 4/10 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2 Threshold Voltage-VGS(th)(V) Capacitance---(pF) 10000 Ciss 1000 C oss 100 Crss ID=250uA 1.8 1.6 1.4 1.2 1 0.8 10 0.1 1 10 Drain-Source Voltage -VDS(V) -60 -40 -20 100 Forward Transfer Admittance vs Drain Current 60 80 100 120 140 160 12 Gate-Source Voltage---VGS(V) Forward Transfer Admittance-GFS(S) 20 40 Gate Charge Characteristics 100 10 1 VDS=10V Pulsed Ta=25°C VDS=20V 10 VDS=50V 8 VDS=80V 6 4 2 ID=13A 0 0.1 0.01 0.1 1 10 Drain Current-ID(A) 0 100 5 10 15 20 25 30 Total Gate Charge---Qg(nC) Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 30 10μs 100 100μs 1ms 10 10ms 100ms 1 Operation in this area is limited by RDS(ON) DC 0.1 Maximum Drain Current---ID(A) 1000 Drain Current --- ID(A) 0 Junction Temperature-Tj(°C) 25 20 15 10 5 0 0.01 1 MTN3820F3 10 Drain-Source Voltage -VDS(V) 100 25 50 75 100 125 Case Temperature---TC(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 5/10 Typical Characteristics(Cont.) Transient Thermal Response Curves ZθJC(t), Thermal Response 10 D=0.5 1 1.ZθJC(t)=2.2 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTN3820F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 6/10 Test Circuit and Waveforms MTN3820F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 7/10 Test Circuit and Waveforms(Cont.) MTN3820F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 8/10 Reel Dimension Carrier Tape Dimension MTN3820F3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 9/10 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3820F3 CYStek Product Specification Spec. No. : C576F3 Issued Date : 2011.11.19 Revised Date : Page No. : 10/10 CYStech Electronics Corp. TO-263 Dimension Marking : B D 2 F α1 2 1 E C A Device Name 3820 Date Code □□□□ Style : Pin 1.Gate 2.Drain α2 3 I G J K L α3 3.Source H 3-Lead Plastic Surface Mounted Package CYStek Package Code : F3 *:Typical Inches Min. Max. 0.3800 0.4050 0.3300 0.3700 0.0550 0.5750 0.6250 0.1600 0.1900 0.0450 0.0550 0.0900 0.1100 0.0180 0.0290 DIM A B C D E F G H Millimeters Min. Max. 9.65 10.29 8.38 9.40 1.40 14.61 15.88 4.06 4.83 1.14 1.40 2.29 2.79 0.46 0.74 DIM I J K L α1 α2 α3 Inches Min. Max. 0.0500 0.0700 *0.1000 0.0450 0.0550 0.0200 0.0390 - Millimeters Min. Max. 1.27 1.78 *2.54 1.14 1.40 0.51 0.99 6° 8° 6° 8° 0° 5° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3820F3 CYStek Product Specification