BC817-16 / -25 / -40 NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR Features · · · · Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction For Switching, AF Driver and Amplifier Applications Complementary PNP Types Available (BC807) SOT-23 A C B Mechanical Data · · · · · · · · B Case: SOT-23, Molded Plastic Case material - UL Flammability Rating Classification 94V-0 Moisture sensitivity: Level 1 per J-STD-020A Terminals: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Marking (See Page 3): BC817-16 6A, K6A BC817-25 6B, K6B BC817-40 6C, K6C Ordering & Date Code Information: See Page 3 Approx. Weight: 0.008 grams Maximum Ratings TOP VIEW E C E D G Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.85 0.80 a 0° 8° H K J M L All Dimensions in mm @TA = 25°C unless otherwise specified Symbol Value Collector-Emitter Voltage Characteristic VCEO 45 V Emitter-Base Voltage VEBO 5.0 V IC 800 mA Peak Collector Current ICM 1000 mA Peak Emitter Current IEM 1000 mA Power Dissipation at TSB = 50°C (Note 1) Pd 310 mW Thermal Resistance, Junction to Substrate Backside (Note 1) RqSB 320 °C/W Thermal Resistance, Junction to Ambient Air (Note 1) RqJA 403 °C/W Tj, TSTG -65 to +150 °C Collector Current Operating and Storage Temperature Range Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic (Note 2) DC Current Gain Current Gain Group -16 -25 -40 Current Gain Group -16 -25 -40 Collector-Emitter Saturation Voltage Base-Emitter Voltage Unit Symbol Min Max hFE 100 160 250 60 100 170 250 400 600 — — — Unit Test Condition — VCE = 1.0V, IC = 300mA VCE(SAT) — 0.7 V IC = 500mA, IB = 50mA VBE — 1.2 V VCE = 1.0V, IC = 300mA nA µA VCE = 45V VCE = 25V, Tj = 150°C VEB = 4.0V VCE = 1.0V, IC = 100mA Collector-Emitter Cutoff Current ICES — 100 5.0 Emitter-Base Cutoff Current IEBO — 100 nA fT 100 — MHz VCE = 5.0V, IC = 10mA, f = 50MHz CCBO — 12 pF VCB = 10V, f = 1.0MHz Gain Bandwidth Product Collector-Base Capacitance Notes: 1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area. 2. Short duration pulse test used to minimize self-heating effect. www.shunyegroup.com.cn 400 1000 fT, GAIN BANDWIDTH PRODUCT (MHz) Pd, POWER DISSIPATION (mW) See Note 1 300 200 100 TA = 25°C f = 20MHz VCE = 5V 100 10 0 0 100 1 200 10 100 1000 IC, COLLECTOR CURRENT (mA) Fig. 2, Gain-Bandwidth Product vs Collector Current TSB, SUBSTRATE TEMPERATURE (°C) Fig. 1, Power Derating Curve 0.5 1000 typical limits at TA = 25°C VCE = 1V 0.4 IC / IB = 10 150°C hFE, DC CURRENT GAIN VCE(SAT), COLLECTOR SATURATION VOLTAGE (V) 1V 0.3 0.2 25°C TA = 25°C -50°C 100 0.1 -50°C 150°C 0 0.1 10 1 10 100 1000 0.1 IC, COLLECTOR CURRENT (mA) Fig. 3, Collector Sat. Voltage vs Collector Current 500 3.2 1 100 10 1000 IC, COLLECTOR CURRENT (mA) Fig. 4, DC Current Gain vs Collector Current 100 2.8 0.35 400 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) 2.4 2 1.8 1.6 300 1.4 1.2 0.8 200 0.6 0.4 100 80 0.3 0.25 60 0.2 40 0.15 0.1 20 IB = 0.05mA IB = 0.2mA 0 0 0 1 2 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 5, Typical Emitter-Collector Characteristics 0 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 6, Typical Emitter-Collector Characteristics www.shunyegroup.com.cn 20