Shunye BC817 Npn surface mount small signal transistor Datasheet

BC817-16 / -25 / -40
NPN SURFACE MOUNT SMALL SIGNAL TRANSISTOR
Features
·
·
·
·
Ideally Suited for Automatic Insertion
Epitaxial Planar Die Construction
For Switching, AF Driver and Amplifier
Applications
Complementary PNP Types Available (BC807)
SOT-23
A
C
B
Mechanical Data
·
·
·
·
·
·
·
·
B
Case: SOT-23, Molded Plastic
Case material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solderable per MIL-STD-202, Method
208
Pin Connections: See Diagram
Marking (See Page 3): BC817-16 6A, K6A
BC817-25 6B, K6B
BC817-40 6C, K6C
Ordering & Date Code Information: See Page 3
Approx. Weight: 0.008 grams
Maximum Ratings
TOP VIEW
E
C
E
D
G
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
E
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.85
0.80
a
0°
8°
H
K
J
M
L
All Dimensions in mm
@TA = 25°C unless otherwise specified
Symbol
Value
Collector-Emitter Voltage
Characteristic
VCEO
45
V
Emitter-Base Voltage
VEBO
5.0
V
IC
800
mA
Peak Collector Current
ICM
1000
mA
Peak Emitter Current
IEM
1000
mA
Power Dissipation at TSB = 50°C (Note 1)
Pd
310
mW
Thermal Resistance, Junction to Substrate Backside (Note 1)
RqSB
320
°C/W
Thermal Resistance, Junction to Ambient Air (Note 1)
RqJA
403
°C/W
Tj, TSTG
-65 to +150
°C
Collector Current
Operating and Storage Temperature Range
Electrical Characteristics
@TA = 25°C unless otherwise specified
Characteristic (Note 2)
DC Current Gain
Current Gain Group -16
-25
-40
Current Gain Group -16
-25
-40
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Unit
Symbol
Min
Max
hFE
100
160
250
60
100
170
250
400
600
—
—
—
Unit
Test Condition
—
VCE = 1.0V, IC = 300mA
VCE(SAT)
—
0.7
V
IC = 500mA, IB = 50mA
VBE
—
1.2
V
VCE = 1.0V, IC = 300mA
nA
µA
VCE = 45V
VCE = 25V, Tj = 150°C
VEB = 4.0V
VCE = 1.0V, IC = 100mA
Collector-Emitter Cutoff Current
ICES
—
100
5.0
Emitter-Base Cutoff Current
IEBO
—
100
nA
fT
100
—
MHz
VCE = 5.0V, IC = 10mA,
f = 50MHz
CCBO
—
12
pF
VCB = 10V, f = 1.0MHz
Gain Bandwidth Product
Collector-Base Capacitance
Notes:
1. Device mounted on Ceramic Substrate 0.7mm; 2.5cm2 area.
2. Short duration pulse test used to minimize self-heating effect.
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400
1000
fT, GAIN BANDWIDTH PRODUCT (MHz)
Pd, POWER DISSIPATION (mW)
See Note 1
300
200
100
TA = 25°C
f = 20MHz
VCE = 5V
100
10
0
0
100
1
200
10
100
1000
IC, COLLECTOR CURRENT (mA)
Fig. 2, Gain-Bandwidth Product vs Collector Current
TSB, SUBSTRATE TEMPERATURE (°C)
Fig. 1, Power Derating Curve
0.5
1000
typical
limits
at TA = 25°C
VCE = 1V
0.4
IC / IB = 10
150°C
hFE, DC CURRENT GAIN
VCE(SAT), COLLECTOR SATURATION VOLTAGE (V)
1V
0.3
0.2
25°C
TA = 25°C
-50°C
100
0.1
-50°C
150°C
0
0.1
10
1
10
100
1000
0.1
IC, COLLECTOR CURRENT (mA)
Fig. 3, Collector Sat. Voltage vs Collector Current
500
3.2
1
100
10
1000
IC, COLLECTOR CURRENT (mA)
Fig. 4, DC Current Gain vs Collector Current
100
2.8
0.35
400
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
2.4
2
1.8
1.6
300
1.4
1.2
0.8
200
0.6
0.4
100
80
0.3
0.25
60
0.2
40
0.15
0.1
20
IB = 0.05mA
IB = 0.2mA
0
0
0
1
2
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 5, Typical Emitter-Collector Characteristics
0
10
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 6, Typical Emitter-Collector Characteristics
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