MCH3476 Ordering number : ENA1952A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH3476 General-Purpose Switching Device Applications Features • • • 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings Gate-to-Source Voltage Drain Current (DC) 20 ID IDP Drain Current (Pulse) Allowable Power Dissipation Channel Temperature PD Tch Storage Temperature Tstg PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 0.25 Packing Type : TL 1.6 FH LOT No. 0 t o 0.02 A W Marking LOT No. 3 8 0.8 °C • Package : MCPH3 • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel MCH3476-TL-H A °C Product & Package Information 0.15 V 2 150 unit : mm (typ) 7019A-003 2.0 V ±12 --55 to +150 Package Dimensions TL 0.25 1 0.65 2 0.3 Electrical Connection 0.07 0.85 2.1 Unit VDSS VGSS 3 1 : Gate 2 : Source 3 : Drain SANYO : MCPH3 1 2 http://semicon.sanyo.com/en/network 60612 TKIM/N0211PE TKIM TC-00002601 No. A1952-1/7 MCH3476 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max V(BR)DSS IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V IGSS VGS(off) | yfs | VGS=±8V, VDS=0V VDS=10V, ID=1mA RDS(on)1 ID=1A, VGS=4.5V 93 125 mΩ RDS(on)2 ID=0.5A, VGS=2.5V 135 190 mΩ RDS(on)3 ID=0.3A, VGS=1.8V 200 310 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 20 V 0.4 VDS=10V, ID=1A 1 μA ±10 μA 1.3 1.9 V S 128 pF 28 pF Crss 21 pF 5.1 ns Rise Time td(on) tr 11 ns Turn-OFF Delay Time td(off) 14.5 ns Fall Time tf 12 ns Total Gate Charge Qg 1.8 nC Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=10V, f=1MHz See specified Test Circuit. VDS=10V, VGS=4.5V, ID=2A IS=2A, VGS=0V 0.3 nC 0.55 nC 0.85 1.2 V Switching Time Test Circuit 4.5V 0V VDD=10V VIN ID=1A RL=10Ω VIN D PW=10μs D.C.≤1% VOUT G MCH3476 P.G 50Ω S Ordering Information Device MCH3476-TL-H Package Shipping memo MCPH3 3,000pcs./reel Pb Free and Halogen Free No. A1952-2/7 MCH3476 ID -- VDS 1.8 V 2.5V 4 .5 V ID -- VGS VDS=10V 2.0 0.5 VGS=1.2V 1.0 °C 1.0 1.5 25° C 0.5 --25 1.5V Ta =7 5°C Drain Current, ID -- A 1.5 2.5 Ta=25°C 8.0V Drain Current, ID -- A 6.0V 2.0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 1A 250 200 150 100 50 0 0 1 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V C 5° --2 C = Ta 75° 1.0 7 °C 25 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 100 7 5 tf 3 2 td(off) 10 7 5 tr td(on) 3 2 1.0 0.01 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 10 IT16644 1.8 2.0 IT16373 =0.3 V, I D =1.8 VGS 200 .5A I =0 2.5V, D = VGS =1.0A 4.5V, I D V GS= 150 100 50 --40 --20 0 20 40 60 80 100 120 140 160 IT16642 IS -- VSD VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 Ciss, Coss, Crss -- VDS 1000 1.2 IT16377 f=1MHz 7 5 3 2 Ciss 100 7 5 Coss Crss 3 2 2 1.6 Diode Forward Voltage, VSD -- V VDD=10V VGS=4.5V 3 2 1.4 A 250 0.001 5 7 10 IT16643 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 1000 7 5 1.2 300 10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 2 1.0 Ambient Temperature, Ta -- °C 5 3 0.8 350 0 --60 10 VDS=10V 7 0.6 RDS(on) -- Ta IT16641 | yfs | -- ID 10 0.4 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0.5A 300 0.2 Gate-to-Source Voltage, VGS -- V Ta=25°C ID=0.3A 350 0 IT16372 RDS(on) -- VGS 400 0 1.0 Ta= 75° C 25°C --25° C 0 10 0 2 4 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V 18 20 IT16379 No. A1952-3/7 MCH3476 VGS -- Qg 10 7 5 VDS=10V ID=2A 4.0 3 3.5 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 4.5 3.0 2.5 2.0 1.0 0.5 3 2 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Total Gate Charge, Qg -- nC PD -- Ta Allowable Power Dissipation, PD -- W 1.0 1.8 2.0 IT16380 1m ID=2A s 10 DC ms 10 0m s op era tio n 3 2 10 0μ s IDP=8A (PW≤10μs) 1.0 7 5 0.1 7 5 1.5 ASO Operation in this area is limited by RDS(on). Ta=25°C Single pulse When mounted on ceramic substrate (900mm2×0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain-to-Source Voltage, VDS -- V 5 7 100 IT16381 When mounted on ceramic substrate (900mm2×0.8mm) 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT16382 No. A1952-4/7 MCH3476 Taping Specification MCH3476-TL-H No. A1952-5/7 MCH3476 Outline Drawing MCH3476-TL-H Land Pattern Example Mass (g) Unit 0.007 mm * For reference Unit: mm 2.1 0.6 0.4 0.65 0.65 No. A1952-6/7 MCH3476 Note on usage : Since the MCH3476 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No. A1952-7/7