CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 1/8 N-Channel Enhancement Mode MOSFET MTN3440N6 Description The MTN3440N6 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOT-26 package is universally preferred for all commercial-industrial surface mount applications. Features Equivalent Circuit • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating package MTN3440N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS TC=25 °C TC=70 °C TA=25 °C TA=70 °C (Note 1) (Note 1) Pulsed Drain Current (Note 2, 3) TC=25 °C TC=70 °C Total Power Dissipation TA=25 °C TA=70 °C Operating Junction Temperature and Storage Temperature Range MTN3440N6 ID IDM PD Tj, Tstg Limits 150 ±20 2.2 1.8 1.7 1.4 8 3.2 2.1 2 1.25 -55~+150 Unit V A W °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 2/8 Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c RθJA Value 39 62.5 Unit (Note 1) Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec. 156℃/W when mounted on minimum copper pad. 2.Pulse width limited by maximum junction temperature. 3.Pulse Width ≤300μs, Duty Cycle≤2% °C/W Electrical Characteristics (Ta=25°C, unless otherwise noted) Symbol Static BVDSS ΔBVDSS/ΔTj VGS(th) IGSS IDSS *RDS(ON) Min. Typ. Max. Unit 150 2 - 0.1 3.3 245 270 2.5 4 ±100 100 10 320 350 - V V/℃ V 283 30 12 12 16 32 17 7.5 1.4 2 - 0.78 45 16 1.7 5 1.2 - *GFS Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd Source-Drain Diode *IS *ISM *VSD *trr Qrr - Test Conditions S VGS=0, ID=250μA Reference to 25℃, ID=250μA VDS=VGS, ID=250μA VGS=±20V, VDS=0 VDS=120V, VGS=0, Tj=25℃ VDS=120V, VGS=0, Tj=55℃ ID=1.5A, VGS=10V ID=1.5A, VGS=6V VDS=15V, ID=1A pF VDS=30V, VGS=0, f=1MHz ns VDS=75V, ID=1A, VGS=10V, RG=6Ω nC VDS=75V, ID=1.7A, VGS=10V, nA μA mΩ A V ns nC IS=1.7A,VGS=0V IS=1.7A,VGS=0V,dI/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTN3440N6-0-T1-G MTN3440N6 Package SOT-26 (Pb-free lead plating and halogen-free package) Shipping 3000 pcs / Tape & Reel CYStek Product Specification Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 3/8 CYStech Electronics Corp. Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.6 ID, Drain Current(A) 7 BVDSS, Normalized Drain-Source Breakdown Voltage 8 10V, 9V,8V,7V,6V 6 5 4 VGS=5V 3 2 1.4 1.2 1 0.8 ID=250μA, VGS=0V 0.6 VGS=4V 1 0.4 0 0 2 4 6 8 VDS, Drain-Source Voltage(V) -60 10 20 60 100 140 Tj, Junction Temperature(°C) 180 Reverse Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 1000 VGS=6V VGS=10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 100 0.1 1 10 ID, Drain Current(A) 0 100 700 4 6 8 IDR , Reverse Drain Current(A) 10 R DS(ON), Normalized Static DrainSource On-State Resistance 2.4 600 ID=1.5A 500 400 300 200 100 VGS=10V, ID=1.5A 2 1.6 1.2 0.8 RDS(ON) @ Tj=25°C : 245 mΩ 0.4 0 0 MTN3440N6 2 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) -20 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 4/8 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage VGS(th), Normalized Threshold Voltage 1000 Capacitance---(pF) Ciss 100 C oss Crss 1.6 ID=250μA 1.4 1.2 1 0.8 0.6 0.4 10 0.1 1 10 VDS , Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current 10 VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 140 Gate Charge Characteristics VDS=75V ID=1.7A VDS=10V VDS=5V 1 VDS=15V 0.1 Pulsed Ta=25°C 0.01 0.001 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 0 10 1ms 1 10ms 100ms 0.1 1s TA=25°C, Tj(max)=150°C, VGS=10V, RθJA=62.5°C/W Single Pulse 0.01 4 6 8 Total Gate Charge---Qg(nC) 10 2 100μs DC 1.8 ID, Maximum Drain Current(A) RDS(ON) Limit 2 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area ID, Drain Current(A) 60 10 100 10 20 Tj, Junction Temperature(°C) 1.6 1.4 1.2 1 0.8 0.6 0.4 TA=25°C, VGS=10V, RθJA=62.5°C/W 0.2 0 0.001 0.01 MTN3440N6 0.1 1 10 100 VDS, Drain-Source Voltage(V) 1000 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 5/8 Typical Characteristics(Cont.) Single Pulse Maximum Power Dissipation Typical Transfer Characteristics 500 8 VDS=5V 450 Peak Transient Power (W) ID, Drain Current (A) 7 6 5 4 3 2 TJ(MAX) =150°C TA=25°C θJA=62.5°C/W 400 350 300 250 200 150 100 1 50 0 0.0001 0.001 0 0 2 4 6 8 VGS, Gate-Source Voltage(V) 10 0.01 10 100 1000 Power Derating Curve Power Derating Curve 4 2.2 2 1.8 3.6 Mounted on FR-4 board with 1 in² pad area PD, Power Dissipation(W) PD, Power Dissipation(W) 0.1 1 Pulse Width(s) 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 3.2 2.8 2.4 2 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 TA, Ambient Temperature(℃) 140 160 0 20 40 60 80 100 120 TC, Case Temperature(℃) 140 160 Transient Thermal Response Curves r(t), Normalized EffectiveTransient Thermal Resistance 1 D=0.5 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=62.5 °C/W 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 1.E-04 Single Pulse 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 t1, Square Wave Pulse Duration(s) MTN3440N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 6/8 Reel Dimension Carrier Tape Dimension MTN3440N6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTN3440N6 CYStek Product Specification Spec. No. : C874N6 Issued Date : 2013.07.10 Revised Date : 2013.09.06 Page No. : 8/8 CYStech Electronics Corp. SOT-26 Dimension Marking: Device Name ● 3440 □□□□ ● Date Code 6-Lead SOT-26 Plastic Surface Mounted Package CYStek Package Code: N6 Style: Pin 1. Drain Pin 2. Drain Pin 3. Gate Pin 4. Source Pin 5. Drain Pin 6. Drain Millimeters Min. Max. 1.050 1.250 0.000 0.100 1.050 1.150 0.300 0.500 0.100 0.200 2.820 3.020 DIM A A1 A2 b c D Inches Min. Max. 0.041 0.049 0.000 0.004 0.041 0.045 0.012 0.020 0.004 0.008 0.111 0.119 DIM E E1 e e1 L θ Millimeters Min. Max. 1.500 1.700 2.650 2.950 0.950 (BSC) 1.800 2.000 0.300 0.600 0° 8° (D) (D) (G) (S) (D) (D) Inches Min. Max. 0.059 0.067 0.104 0.116 0.037 (BSC) 0.071 0.079 0.012 0.024 0° 8° Notes : 1.Controlling dimension : millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material : • Lead : Pure tin plated. • Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTN3440N6 CYStek Product Specification