IRF830I-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Ease of Paralleling D ▼ Fast Switching Characteristic ▼ Simple Drive Requirement G ▼ RoHS Compliant & Halogen-Free BVDSS 500V RDS(ON) 1.5Ω ID 4.5A S Description APEC MOSFET provide the power designer with the best combination of fast switching , lower on-resistance and reasonable cost. G D TO-220CFM(I) S The TO-220CFM isolation package is widely preferred for commercialindustrial through hole applications. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 500 V VGS Gate-Source Voltage +20 V ID@TC=25℃ Continuous Drain Current, V GS @ 10V 4.5 A ID@TC=100℃ Continuous Drain Current, V GS @ 10V 2.8 A 18 A 36.7 W 101 mJ 4.5 A 1 IDM Pulsed Drain Current PD@TC=25℃ Total Power Dissipation 2 EAS Single Pulse Avalanche Energy IAR Avalanche Current TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Rthj-c Maximum Thermal Resistance, Junction-case Rthj-a Maximum Thermal Resistance, Junction-ambient Data & specifications subject to change without notice Value Unit 3.4 ℃/W 62 ℃/W 1 200907281 IRF830I-HF o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 500 - - V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=2.7A - - 1.5 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=2.7A - 2.4 - S IDSS Drain-Source Leakage Current VDS=500V, VGS=0V - - 25 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA ID=3.1A - 28 45 nC 3 Qg Total Gate Charge Qgs Gate-Source Charge VDS=400V - 4 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 16 - nC 3 td(on) Turn-on Delay Time VDD=250V - 10 - ns tr Rise Time ID=3.1A - 15 - ns td(off) Turn-off Delay Time RG=12Ω,VGS=10V - 41 - ns tf Fall Time RD=80.6Ω - 20 - ns Ciss Input Capacitance VGS=0V - 710 1140 pF Coss Output Capacitance VDS=25V - 170 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 60 - pF Rg Gate Resistance f=1.0MHz - 2 - Ω Min. Typ. IS=4.5A, VGS=0V - - 1.5 V Source-Drain Diode Symbol VSD Parameter Forward On Voltage 3 3 Test Conditions Max. Units trr Reverse Recovery Time IS=3.1A, VGS=0V, - 370 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 3.9 - uC Notes: 1.Pulse width limited by Max. junction temperature. o 2.Starting Tj=25 C , VDD=50V , L=10mH , RG=25Ω 3.Pulse test THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 IRF830I-HF 8 5 4 10V 7 .0V 6 .0V 3 5 .0 V o T C =25 C ID , Drain Current (A) 6 ID , Drain Current (A) T C =150 o C 10V 7.0V 6.0V 4 2 V G = 4. 5 V 5.0V 2 1 V G =4.5V 0 0 0 4 8 12 16 0 20 V DS , Drain-to-Source Voltage (V) 4 8 12 16 20 24 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 1.1 Normalized RDS(ON) Normalized BVDSS (V) I D =2.7A V G =10V 1 2 1 0.9 0 0.8 -50 0 50 100 -50 150 o T j , Junction Temperature ( C) 0 50 100 150 T j , Junction Temperature ( o C ) Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance Temperature v.s. Junction Temperature 1.4 8 1.2 T j = 150 o C Normalized VGS(th) (V) 10 T j = 25 o C IS (A) 6 4 1 0.8 0.6 2 0.4 0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 IRF830I-HF f=1.0MHz 10000 12 I D =3.1A V DS =100V V DS =250V V DS =400V 8 1000 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 C oss 4 100 C rss 2 0 10 0 10 20 30 40 1 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 10 Operation in this area limited by RDS(ON) ID (A) 100us 1ms 1 10ms 100ms 1s DC 0.1 o T c =25 C Single Pulse Normalized Thermal Response (Rthjc) 1 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 0.01 PDM 0.01 t Single Pulse T Duty factor = t/T Peak Tj = PDM x Rthjc + T C 0.001 0.01 1 10 100 1000 0.00001 0.0001 V DS , Drain-to-Source Voltage (V) Fig 9. Maximum Safe Operating Area 0.001 0.01 0.1 1 10 t , Pulse Width (s) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4