HERAF801G - HERAF808G CREAT BY ART Pb 8.0AMPS. Isolated Glass Passivated High Efficient Rectifiers ITO-220AC RoHS COMPLIANCE Features UL Recognized File # E-326243 Glass passivated chip junction High efficiency, Low VF High current capability High reliability High surge current capability For use in low voltage, high frequency inventor, free wheeling, and polarity protection application Green compound with suffix "G" on packing code & prefix "G" on datecode Mechanical Data Cases: ITO-220AC Molded plastic Epoxy: UL 94V-0 rate flame retardant Dimensions in inches and (millimeters) Marking Diagram Terminals: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed HERAF80XG = Specific Device Code Polarity: As marked G = Green Compound High temperature soldering guaranteed: 260℃/ 0.25", (6.35mm) from case for 10 seconds Y = Year WW = Work Week Mounting torque: 5 in-lbs. max Weight: 1.74 grams Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Symbol HERAF HERAF HERAF HERAF HERAF HERAF HERAF HERAF 801G 802G 803G 804G 805G 806G 807G 808G 50 100 200 300 400 600 800 1000 Units Maximum Recurrent Peak Reverse Voltage VRRM Maximum RMS Voltage VRMS 35 70 140 210 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 300 400 600 800 1000 V Maximum Average Forward Rectified Current IF(AV) 8 A Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) IFSM 150 A Maximum Instantaneous Forward Voltage (Note 1) @8A Maximum DC Reverse Current at Rated DC Blocking Voltage @ T A=25 ℃ @ T A=125 ℃ VF 1.0 1.3 1.7 uA 400 uA Trr 50 80 Typical Junction Capacitance (Note 3) Cj 80 60 Operating Temperature Range Storage Temperature Range RθJC V 10 IR Maximum Reverse Recovery Time (Note 2) Typical Thermal Resistance V nS pF O 2 C/W TJ - 65 to + 150 O C TSTG - 65 to + 150 O C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:E12 RATINGS AND CHARACTERISTIC CURVES (HERAF801G THRU HERAF808G) FIG. 2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING CURVE 1000 INSTANTANEOUS REVERSE CURRENT (uA) AVERAGE FORWARD A CURRENT (A) 20 16 12 8 4 0 0 50 100 150 CASE TEMPERATURE (oC) 100 TA=125℃ 10 TA=75℃ 1 TA=25℃ 0.1 150 PEAK FORWARD SURGE CURRENT (A) 0 FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 40 60 80 100 120 140 8.3mS Single Half Sine Wave JEDEC Method 120 90 FIG. 5- TYPICAL FORWARD CHARACTERISRICS 60 100 30 1 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 4- TYPICAL JUNCTION CAPACITANCE 180 150 INSTANTANEOUS FORWARD CURRENT (A) HERAF801G-HERAF804G 0 JUNCTION CAPACITANCE (pF) 20 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10 1 HERAF805G 0.1 HERAF806G-HERAF808G 120 0.01 HERAF801G-HERAF805G 90 0.4 HERAF806G-HERAF808G 60 0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V) 30 0 1 10 100 1000 REVERSE VOLTAGE (V) Version:E12 1.8