InGaAs-APD/Preamp Receiver FRM5W231KT/LT FEATURES KT • Data rate up to 2.5Gb/s • -32dBm typ. sensitivity • 30µm active area APD chip with GaAs preamplifier • Small co-axial package with single mode fiber APPLICATIONS • High bit rate long haul optical transmission systems operating at 2.5Gb/s LT DESCRIPTION These APD preamplifiers use an InGaAs APD chip with GaAs IC preamplifier. The KT package is designed for a horizontal PC board mount. The LT package is secured by a vertical flange. Each package is connected with single mode fiber by Nd: YAG welding. The detector preamplifier is DC coupled and has a low electrical output when the APD is illuminated. Edition 1.0 March 1999 1 InGaAs-APD/Preamp Receiver FRM5W231KT/LT ABSOLUTE MAXIMUM RATINGS (Tc=25°C, unless otherwise specified) Parameter Symbol Ratings Unit Storage Temperature Tstg -40 to +85 °C Operating Temperature Top -40 to +85 °C Supply Voltage Vss -7 to 0 V APD Reverse Voltage VR (Note 1) 0 to VB V APD Reverse Current IR (Note 2) 0.6 mA OPTICAL & ELECTRICAL CHARACTERISTICS (Tc=25°C, λ=1,310/1,550nm, Vss=-5.2V, unless otherwise specified) Symbol Test Conditions APD Responsivity R15 R13 1,550nm, M=1 1,310nm, M=1 Min. 0.80 0.75 APD Breakdown Voltage VB ID=10µA 40 Temperature Coefficient of VB γ Note 3 AC Transimpedance Zt Parameter Bandwidth Equivalent Input Noise Current Density Sensitivity Maximum Overload Limits Typ. 0.85 0.85 Unit Max. - A/W A/W 50 65 V 0.08 0.12 0.15 V/°C AC-Coupled, f=100MHz, RL=50Ω, Pin <-20dBm, 400 600 - Ω BW AC-Coupled, RL=50Ω, M=3 to 15, -3dBm from 1MHz 1.8 2.0 - GHz in AC-Coupled, RL=50Ω, Average within BW - 6.5 8 - -32 -31 dBm Pr 2.488Gb/s NRZ, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85°C - -31 -30 dBm 2.488Gb/s NRZ, M=3, PRBS=223-1, B.E.R.=10-10, VR is set at optimum value Tc=-40 to +85°C, M=3 -5 - - dBm -7 - - dBm Po pA/ Hz Power Supply Current Iss - - - 40 mA Power Supply Voltage Vss - -5.46 -5.2 -4.94 V Note: (1) VB differs from device to device. VB data is attached to each devices. (2) CW condition (3) γ=dVB/dTC Edition 1.0 March 1999 2 InGaAs-APD/Preamp Receiver FRM5W231KT/LT Fig. 2 Relative Frequency Response Fig. 1 Output Characteristics 0.7 0.3 Relative Response (3dB/div) Output Voltage Peak to Peak, Vpp(mV) Tc = 25°C Vss=-5.2V 0.6 AC-Coupled RL=50Ω 0.5 100Mb/s Duty 50% Mark density 50% 0.4 Zt ~ 600Ω 0.2 M=10 M=5 Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω Pin=-30dBm λ = 1,310/1,550nm 0 0.1 0 3.0 1.5 Frequency, f (GHz) 0 0.1 0.2 0.3 0.4 0.5 0.6 Average Photocurrent, Ip.ave (mA) Fig.4 Eye Diagram with a 1,550nm, 2.5Gb/s NRZ, 223-1 PRBS incident signal Input optical wave form with Bessel filter Fig.3 Equivalent Input Noise Current Density Equivalent Input Noise Current Density, in (pA/sqr. Hz) M=15 10 5 Equivalent output wave form at Pin=-32dBm, Tc=25°C, M=optimum Tc = 25°C Vss=-5.2V AC-Coupled RL=50Ω 0 0 2.0 1.0 Frequency, f (GHz) 100ps/div Edition 1.0 March 1999 3 InGaAs-APD/Preamp Receiver FRM5W231KT/LT Fig.5 Bit Error Rate λ=1,310/1,550nm 2.5Gb/s, NRZ Vss=-5.2V M=Optimum Duty 50% Mark Density 50% Bit Error Rate 10-4 10-6 Tc=+25°C +85°C 10-8 -40°C 10-10 10-12 -40 -35 -30 -25 Received Optical Power (dBm) “KT” PACKAGE UNIT: mm GND 2-C1.5 2.0±0.1 VR 2.5±0.1 VSS Ø0.9±0.1 Ø7.2 MAX Ø6.0 MAX 4-Ø0.45±0.05 P.C.D. 4.0±0.2 P.C.D. 2.0±0.2 8.4±0.2 14.0±0.15 17.0±0.2 VR OUT GND 4.4 MAX 32.0 MAX 10.0 MIN 4.2±0.2 1000 MIN VSS 8.4±0.2 OUT “LT” PACKAGE UNIT: mm GND VR VR 7.6 MAX Ø0.9 Ø6.0 MAX 1.0±0.1 VSS OUT Ø7.2 MAX 4-Ø0.45±0.05 2.5±0.1 P.C.D. 2.0±0.2 OUT P.C.D. 4.0±0.2 14.0±0.15 17.0±0.2 VSS GND 10.0 MIN 32.0 MAX 1000 MIN Edition 1.0 March 1999 4 InGaAs-APD/Preamp Receiver FRM5W231KT/LT For further information please contact: FUJITSU COMPOUND SEMICONDUCTOR, INC. Americas & R.O.W. 2355 Zanker Rd. San Jose, CA 95131-1138, U.S.A. Phone: (408) 232-9500 FAX: (408) 428-9111 www.fcsi.fujitsu.com FME, QDD Fujitsu Microelectronics Europe GmbH Quantum Devices Division Network House Norreys Drive Maidenhead, Berkshire SL6 4FJ United Kingdom TEL: +44 (0) 1628 504800 FAX: +44 (0) 1628 504888 CAUTION Fujitsu Compound Semiconductor Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the environment. For safety, observe the following procedures: • Do not put this product into the mouth. • Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed. • Observe government laws and company regulations when discarding this product. This product must be discarded in accordance with methods specified by applicable hazardous waste procedures. FUJITSU QUANTUM DEVICES SINGAPORE PTE LTD. Hong Kong Branch Rm. 1101, Ocean Centre, 5 Canton Rd. Tsim Sha Tsui, Kowloon, Hong Kong TEL: +852-23770226 FAX: +852-23763269 FUJITSU QUANTUM DEVICES LIMITED Global Business Division Global Sales Support Department Shinjuku Daiichiseimei Building, 2-7-1 Nishishinjuku, Shinjuku-ku, Tokyo, 163-0721, Japan TEL: +81-3-5322-3356 FAX: +81-3-5322-3398 Fujitsu Limited reserves the right to change products and specifications without notice. The information does not convey any license under rights of Fujitsu Limited or others. © 2000 FUJITSU COMPOUND SEMICONDUCTOR, INC. Printed in U.S.A. FCSI0200M200 Edition 1.0 March 1999 5