Order this document MMBT3904WT1/D SEMICONDUCTOR TECHNICAL DATA NPN and PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is designed for low power surface mount applications. MAXIMUM RATINGS Symbol Value Unit Collector – Emitter Voltage Rating MMBT3904WT1 MMBT3906WT1 VCEO 40 –40 Vdc Collector – Base Voltage MMBT3904WT1 MMBT3906WT1 VCBO 60 –40 Vdc Emitter – Base Voltage MMBT3904WT1 MMBT3906WT1 VEBO 6.0 –5.0 Vdc IC 200 –200 mAdc GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT 3 Collector Current — Continuous MMBT3904WT1 MMBT3906WT1 1 THERMAL CHARACTERISTICS 2 Characteristic Total Device Dissipation(1) TA = 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol Max Unit PD 150 mW RqJA 833 °C/W TJ, Tstg – 55 to +150 °C CASE 419–02, STYLE 3 SOT–323/SC–70 DEVICE MARKING MMBT3904WT1 = AM MMBT3906WT1 = 2A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Characteristic Min Max 40 –40 — — 60 –40 — — 6.0 –5.0 — — — — 50 –50 — — 50 –50 Unit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage(2) (IC = 1.0 mAdc, IB = 0) (IC = –1.0 mAdc, IB = 0) MMBT3904WT1 MMBT3906WT1 Collector – Base Breakdown Voltage (IC = 10 mAdc, IE = 0) (IC = –10 mAdc, IE = 0) MMBT3904WT1 MMBT3906WT1 Emitter – Base Breakdown Voltage (IE = 10 mAdc, IC = 0) (IE = –10 mAdc, IC = 0) MMBT3904WT1 MMBT3906WT1 Base Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) MMBT3904WT1 MMBT3906WT1 Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) (VCE = –30 Vdc, VEB = –3.0 Vdc) MMBT3904WT1 MMBT3906WT1 V(BR)CEO Vdc V(BR)CBO Vdc V(BR)EBO Vdc IBL nAdc ICEX nAdc 1. Device mounted on FR4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms; Duty Cycle 2.0%. v v Thermal Clad is a trademark of the Bergquist Company. Motorola Small–Signal Transistors, FETs and Diodes Device Data Motorola, Inc. 1996 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max MMBT3904WT1 40 70 100 60 30 — — 300 — — MMBT3906WT1 60 80 100 60 30 — — 300 — — MMBT3904WT1 — — 0.2 0.3 MMBT3906WT1 — — –0.25 –0.4 MMBT3904WT1 0.65 — 0.85 0.95 MMBT3906WT1 –0.65 — –0.85 –0.95 300 250 — — — — 4.0 4.5 — — 8.0 10.0 1.0 2.0 10 12 0.5 0.1 8.0 10 100 100 400 400 1.0 3.0 40 60 — — 5.0 4.0 Unit ON CHARACTERISTICS(2) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) (IC = –0.1 mAdc, VCE = –1.0 Vdc) (IC = –1.0 mAdc, VCE = –1.0 Vdc) (IC = –10 mAdc, VCE = –1.0 Vdc) (IC = –50 mAdc, VCE = –1.0 Vdc) (IC = –100 mAdc, VCE = –1.0 Vdc) hFE Collector – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) — VCE(sat) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Base – Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) (IC = –10 mAdc, IB = –1.0 mAdc) (IC = –50 mAdc, IB = –5.0 mAdc) Vdc VBE(sat) Vdc SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz) (IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz) MMBT3904WT1 MMBT3906WT1 fT Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) (VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz) MMBT3904WT1 MMBT3906WT1 Input Impedance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Voltage Feedback Ratio (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Small – Signal Current Gain (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Output Admittance (VCE = 10 Vdc, IC = 1.0 mAdc, f = 1.0 kHz) (VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 Noise Figure (VCE = 5.0 Vdc, IC = 100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) (VCE = –5.0 Vdc, IC = –100 mAdc, RS = 1.0 k Ω, f = 1.0 kHz) MMBT3904WT1 MMBT3906WT1 MHz Cobo pF Cibo pF kΩ hie X 10– 4 hre hfe — mmhos hoe NF dB SWITCHING CHARACTERISTICS Delay Time (VCC = 3.0 Vdc, VBE = – 0.5 Vdc) (VCC = –3.0 Vdc, VBE = 0.5 Vdc) MMBT3904WT1 MMBT3906WT1 td — — 35 35 Rise Time (IC = 10 mAdc, IB1 = 1.0 mAdc) (IC = –10 mAdc, IB1 = –1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tr — — 35 35 Storage Time (VCC = 3.0 Vdc, IC = 10 mAdc) (VCC = –3.0 Vdc, IC = –10 mAdc) MMBT3904WT1 MMBT3906WT1 ts — — 200 225 Fall Time (IB1 = IB2 = 1.0 mAdc) (IB1 = IB2 = –1.0 mAdc) MMBT3904WT1 MMBT3906WT1 tf — — 50 75 2. Pulse Test: Pulse Width 2 v 300 ms, Duty Cycle v 2.0%. ns ns Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT3904WT1 DUTY CYCLE = 2% 300 ns +3 V +10.9 V 10 < t1 < 500 ms t1 DUTY CYCLE = 2% 275 +3 V +10.9 V 275 10 k 10 k 0 – 0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 – 9.1 V < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit Figure 2. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 5000 10 MMBT3904WT1 2000 5.0 Q, CHARGE (pC) CAPACITANCE (pF) VCC = 40 V IC/IB = 10 3000 7.0 Cibo 3.0 Cobo 2.0 MMBT3904WT1 1000 700 500 QT 300 200 QA 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 40 100 70 50 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 3. Capacitance Figure 4. Charge Data Motorola Small–Signal Transistors, FETs and Diodes Device Data 200 3 MMBT3904WT1 500 500 IC/IB = 10 200 100 70 50 tr @ VCC = 3.0 V 30 20 40 V 10 7 5 15 V MMBT3904WT1 td @ VOB = 0 V 1.0 5.0 7.0 10 2.0 3.0 20 50 70 100 30 100 70 50 30 20 10 7 5 2.0 V 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn – On Time Figure 6. Rise Time 200 500 500 300 200 IC/IB = 20 t′s = ts – 1/8 tf IB1 = IB2 IC/IB = 10 VCC = 40 V IB1 = IB2 300 200 IC/IB = 20 100 70 50 t f , FALL TIME (ns) t s′ , STORAGE TIME (ns) VCC = 40 V IC/IB = 10 300 t r, RISE TIME (ns) TIME (ns) 300 200 IC/IB = 20 IC/IB = 10 30 20 10 7 5 2.0 3.0 IC/IB = 10 30 20 10 7 5 MMBT3904WT1 1.0 100 70 50 5.0 7.0 10 20 50 70 100 30 200 MMBT3904WT1 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time Figure 8. Fall Time 200 TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 12 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 8 6 SOURCE RESISTANCE = 1.0 k IC = 50 mA 4 2 0 0.1 4 SOURCE RESISTANCE = 500 W IC = 100 mA 0.2 0.4 1.0 2.0 IC = 1.0 mA 12 NF, NOISE FIGURE (dB) 10 NF, NOISE FIGURE (dB) 14 SOURCE RESISTANCE = 200 W IC = 1.0 mA IC = 0.5 mA 10 IC = 50 mA 8 IC = 100 mA 6 4 2 MMBT3904WT1 4.0 10 20 40 MMBT3904WT1 100 0 0.1 0.2 0.4 1.0 2.0 4.0 10 20 f, FREQUENCY (kHz) RS, SOURCE RESISTANCE (k OHMS) Figure 9. Noise Figure Figure 10. Noise Figure 40 Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 MMBT3904WT1 h PARAMETERS (VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C) 300 hoe, OUTPUT ADMITTANCE (m mhos) 100 MMBT3904WT1 h fe , CURRENT GAIN 200 100 70 50 MMBT3904WT1 50 20 10 5 2 1 30 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 0.1 0.2 20 10 5.0 10 10 10 h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) h ie , INPUT IMPEDANCE (k OHMS) 5.0 Figure 12. Output Admittance Figure 11. Current Gain MMBT3904WT1 5.0 2.0 1.0 0.5 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 7.0 MMBT3904WT1 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 10 Figure 13. Input Impedance Motorola Small–Signal Transistors, FETs and Diodes Device Data 0.1 0.2 0.3 0.5 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 14. Voltage Feedback Ratio 5 MMBT3904WT1 h FE, DC CURRENT GAIN (NORMALIZED) TYPICAL STATIC CHARACTERISTICS 2.0 TJ = +125°C VCE = 1.0 V MMBT3904WT1 +25°C 1.0 0.7 – 55°C 0.5 0.3 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 15. DC Current Gain 1.0 TJ = 25°C MMBT3904WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.2 0.1 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) Figure 16. Collector Saturation Region 1.0 1.2 TJ = 25°C MMBT3904WT1 MMBT3904WT1 VBE(sat) @ IC/IB =10 0.8 VBE @ VCE =1.0 V 0.6 0.4 VCE(sat) @ IC/IB =10 qVC FOR VCE(sat) 0 – 55°C TO +25°C – 0.5 – 55°C TO +25°C – 1.0 +25°C TO +125°C qVB FOR VBE(sat) – 1.5 0.2 0 +25°C TO +125°C 0.5 COEFFICIENT (mV/ °C) V, VOLTAGE (VOLTS) 1.0 1.0 6 2.0 5.0 10 20 50 100 200 – 2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 17. “ON” Voltages Figure 18. Temperature Coefficients 180 200 Motorola Small–Signal Transistors, FETs and Diodes Device Data MMBT3906WT1 3V 3V < 1 ns + 9.1 V 275 275 < 1 ns 10 k 10 k 0 CS < 4 pF* +10.6 V 300 ns 10 < t1 < 500 ms DUTY CYCLE = 2% DUTY CYCLE = 2% CS < 4 pF* 1N916 t1 10.9 V * Total shunt capacitance of test jig and connectors Figure 19. Delay and Rise Time Equivalent Test Circuit Figure 20. Storage and Fall Time Equivalent Test Circuit TYPICAL TRANSIENT CHARACTERISTICS TJ = 25°C TJ = 125°C 10 5000 MMBT3906WT1 5.0 MMBT3906WT1 VCC = 40 V IC/IB = 10 3000 2000 QT Cobo Q, CHARGE (pC) CAPACITANCE (pF) 7.0 Cibo 3.0 2.0 1000 700 500 300 200 QA 100 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 70 50 20 30 40 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 REVERSE BIAS VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 21. Capacitance Figure 22. Charge Data 200 500 500 300 200 IC/IB = 10 MMBT3906WT1 MMBT3906WT1 300 200 VCC = 40 V IB1 = IB2 t f , FALL TIME (ns) IC/IB = 20 TIME (ns) 100 70 50 tr @ VCC = 3.0 V 30 20 10 7 5 15 V 40 V 2.0 V td @ VOB = 0 V 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 23. Turn – On Time Motorola Small–Signal Transistors, FETs and Diodes Device Data 100 70 50 IC/IB = 10 30 20 10 7 5 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) Figure 24. Fall Time 7 MMBT3906WT1 TYPICAL AUDIO SMALL– SIGNAL CHARACTERISTICS NOISE FIGURE VARIATIONS (VCE = –5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz) 5.0 4.0 f = 1.0 kHz SOURCE RESISTANCE = 200 W IC = 0.5 mA 3.0 SOURCE RESISTANCE = 2.0 k IC = 50 mA 2.0 SOURCE RESISTANCE = 2.0 k IC = 100 mA 1.0 0 0.1 0.2 0.4 IC = 1.0 mA 10 NF, NOISE FIGURE (dB) NF, NOISE FIGURE (dB) 12 SOURCE RESISTANCE = 200 W IC = 1.0 mA IC = 0.5 mA 8.0 6.0 4.0 IC = 50 mA 2.0 IC = 100 mA MMBT3906WT1 1.0 2.0 4.0 10 f, FREQUENCY (kHz) 20 MMBT3906WT1 40 0 0.1 100 0.2 0.4 Figure 25. 1.0 2.0 4.0 10 20 RS, SOURCE RESISTANCE (kΩ) 40 100 Figure 26. h PARAMETERS (VCE = –10 Vdc, f = 1.0 kHz, TA = 25°C) 100 hoe, OUTPUT ADMITTANCE (m mhos) 300 MMBT3906WT1 hfe , CURRENT GAIN 200 100 70 50 70 MMBT3906WT1 50 30 20 10 7.0 5.0 30 0.1 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 0.1 0.2 Figure 27. Current Gain h re , VOLTAGE FEEDBACK RATIO (X 10 –4 ) MMBT3906WT1 h ie , INPUT IMPEDANCE (k Ω) 10 10 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) Figure 29. Input Impedance 8 5.0 7.0 Figure 28. Output Admittance 20 0.3 0.2 0.5 0.7 1.0 2.0 3.0 0.3 IC, COLLECTOR CURRENT (mA) 5.0 7.0 10 MMBT3906WT1 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (mA) 5.0 7.0 Figure 30. Voltage Feedback Ratio Motorola Small–Signal Transistors, FETs and Diodes Device Data 10 MMBT3906WT1 STATIC CHARACTERISTICS h FE, DC CURRENT GAIN (NORMALIZED) 2.0 TJ = +125°C VCE = 1.0 V +25°C 1.0 0.7 – 55°C 0.5 0.3 MMBT3906WT1 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 20 30 50 70 100 200 VCE, COLLECTOR EMITTER VOLTAGE (VOLTS) Figure 31. DC Current Gain 1.0 TJ = 25°C MMBT3906WT1 0.8 IC = 1.0 mA 10 mA 30 mA 100 mA 0.6 0.4 0.2 0 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 IB, BASE CURRENT (mA) 0.7 1.0 2.0 3.0 5.0 7.0 10 1.0 VBE(sat) @ IC/IB = 10 TJ = 25°C V, VOLTAGE (VOLTS) 0.8 VBE @ VCE = 1.0 V 0.6 MMBT3906WT1 0.4 0.2 VCE(sat) @ IC/IB = 10 0 1.0 2.0 50 5.0 10 20 IC, COLLECTOR CURRENT (mA) 100 θV, TEMPERATURE COEFFICIENTS (mV/°C) Figure 32. Collector Saturation Region 200 Figure 33. “ON” Voltages Motorola Small–Signal Transistors, FETs and Diodes Device Data 1.0 0.5 qVC FOR VCE(sat) +25°C TO +125°C – 55°C TO +25°C 0 –0.5 MMBT3906WT1 +25°C TO +125°C –1.0 qVS FOR VBE(sat) – 55°C TO +25°C –1.5 –2.0 0 20 40 60 80 100 120 140 160 IC, COLLECTOR CURRENT (mA) 180 200 Figure 34. Temperature Coefficients 9 INFORMATION FOR USING THE SOT–323/SC–70 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm SOT–323/SC–70 SOT–323/SC–70 POWER DISSIPATION The power dissipation of the SOT–323/SC–70 is a function of the pad size. This can vary from the minimum pad size for soldering to a pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RθJA, the thermal resistance from the device junction to ambient, and the operating temperature, TA . Using the values provided on the data sheet for the SOT–323/SC–70 package, PD can be calculated as follows: PD = TJ(max) – TA RθJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into the equation for an ambient temperature TA of 25°C, one can calculate the power dissipation of the device which in this case is 150 milliwatts. PD = 150°C – 25°C 833°C/W = 150 milliwatts The 833°C/W for the SOT–323/SC–70 package assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 150 milliwatts. There are other alternatives to achieving higher power dissipation from the SOT–323/SC–70 package. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, an aluminum core board, the power dissipation can be doubled using the same footprint. 10 SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. • Always preheat the device. • The delta temperature between the preheat and soldering should be 100°C or less.* • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C. • The soldering temperature and time shall not exceed 260°C for more than 10 seconds. • When shifting from preheating to soldering, the maximum temperature gradient shall be 5°C or less. • After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. • Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. Motorola Small–Signal Transistors, FETs and Diodes Device Data PACKAGE DIMENSIONS A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 B S 1 2 D V G C 0.05 (0.002) R N J DIM A B C D G H J K L N R S V INCHES MIN MAX 0.071 0.087 0.045 0.053 0.035 0.049 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.031 0.039 0.079 0.087 0.012 0.016 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.90 1.25 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 0.80 1.00 2.00 2.20 0.30 0.40 K H CASE 419–02 ISSUE G SOT–323/SC–70 Motorola Small–Signal Transistors, FETs and Diodes Device Data STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR 11 Motorola reserves the right to make changes without further notice to any products herein. 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