ON EN7225B Bipolar transistor -30v, -3a, low vce(sat), pnp single cph6 Datasheet

Ordering number : EN7225B
CPH6122
Bipolar Transistor
–30V, –3A, Low VCE(sat), PNP Single CPH6
http://onsemi.com
Applications
•
Relay drivers, lamp drivers, motor drivers, flash
Features
•
•
•
•
•
•
Adoption of MBIT process
High current capacitance
Low collector-to-emitter saturation voltage
High-speed switching
Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm)
High allowable power dissipation
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Conditions
Ratings
-30
V
-30
V
VEBO
IC
-5
V
-3
A
ICP
IB
Base Current
Collector Dissipation
Unit
VCBO
VCEO
Junction Temperature
PC
Tj
Storage Temperature
Tstg
-5
-600
Mounted on a ceramic board (600mm2×0.8mm)
A
mA
1.3
W
150
°C
-55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Product & Package Information
unit : mm (typ)
7018A-002
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
5
CPH6122-TL-E
0.15
2.9
6
4
Packing Type: TL
Marking
0.9
1
2
0.95
LOT No.
AW
0.05
1.6
0.2
0.6
2.8
0.2
0.6
Package Dimensions
TL
3
0.4
1 : Collector
2 : Collector
3 : Base
4 : Emitter
5 : Collector
6 : Collector
CPH6
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
September, 2013
62012 TKIM/O1106EA SYIM/72602 TSIM TA-100026 No.7225-1/6
CPH6122
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
VCE= -2V, IC= -500mA
VCE= -10V, IC= -500mA
VCE(sat)1
VCB= -10V, f=1MHz
IC= -1.5A, IB= -30mA
VCE(sat)2
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
typ
max
200
Unit
-0.1
μA
-0.1
μA
560
400
MHz
25
pF
-180
-270
mV
IC= -1.5A, IB= -75mA
-120
-180
mV
IC= -1.5A, IB= -30mA
-0.83
-1.2
V
IC= -10μA, IE=0A
IC= -1mA, RBE=∞
-30
V
-30
V
IE= -10μA, IC=0A
-5
V
50
tstg
tf
Fall Time
min
VCB= -30V, IE=0A
VEB= -4V, IC=0A
fT
Cob
Output Capacitance
Ratings
Conditions
See specified Test Circuit.
ns
270
ns
27
ns
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
INPUT
OUTPUT
IB2
RB
VR
24Ω
50Ω
+
+
100μF
VBE=5V
470μF
VCC= --12V
--20IB1=20IB2=IC= --500mA
Ordering Information
Device
CPH6122-TL-E
Shipping
memo
CPH6
3,000pcs./reel
Pb Free
IC -- VCE
--2.5
--6mA
--1.2
--4mA
--1.0
--0.8
--2mA
--0.6
--0.4
--2.0
--1.5
C
25°C
--25°C
--8mA
--50m
--1.4
VCE= --2V
--10mA
Ta=75
°
A
mA
0
--2
A
--1.6
IC -- VBE
--3.0
Collector Current, IC -- A
--4
0
--1.8
--3
0m
mA
--2.0
Collector Current, IC -- A
Package
--1.0
--0.5
--0.2
IB=0mA
0
0
--0.1
--0.2 --0.3
--0.4
--0.5
--0.6
--0.7
--0.8
Collector-to-Emitter Voltage, VCE -- V
--0.9
--1.0
IT04554
0
0
--0.2
--0.4
--0.6
--0.8
Bass-to-Emitter Voltage, VBE -- V
--1.0
IT04555
No.7225-2/6
CPH6122
hFE -- IC
Ta=75°C
3
25°C
--25°C
2
100
7
5
3
2
10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
Cob -- VCB
100
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Output Capacitance, Cob -- pF
3
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
7
2
--10
Collector-to-Base Voltage, VCB -- V
7
5
3
2
C
25°
C
75°
Ta=
5°C
--2
2
--10
--0.01
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
10
0m
ms
--1.0
7
5
DC
3
s
op
era
2
tio
Collector Dissipation, PC -- W
Collector Current, IC -- A
10
2
n
--0.1
7
5
3
2
Ta=25°C
Single pulse
Mounted on a ceramic board (600mm2✕0.8mm)
--0.01
--0.1
2
3
5
7 --1.0
2
3
5
7 --10
2
Collector-to-Emitter Voltage, VCE -- V
5
C
5°
=7
a
T
C
5°
--2
--100
7
5
3
2
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5 7
IT04559
VBE(sat) -- IC
IC / IB=50
--1.0
°C
Ta= --25
°
5
2 C
75°C
7
2
3
5
7 --0.1
2
3
5
7 --1.0
2
3
5
7
IT04561
PC -- Ta
1.2
s
s 0μ
0μ 50
s
3
IT04557
1.3
10
3
2
Collector Current, IC -- A
<50μs
1m
7 --1.0
2
1.4
ICP= --5A
IC= --3A
5
3
ASO
--10
7
5
3
5
5
--0.01
5 7 --10
IT04560
Collector Current, IC -- A
2
IC / IB=20
2
--1000
3
7 --0.1
Collector Current, IC -- A
VCE(sat) -- IC
7
5
5
IT04558
IC / IB=50
--100
3
VCB(sat) -- IC
--10
--0.01
3
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
3
5
2
7
5
3
100
--1000
7
2
2
Collector Current, IC -- A
f=1MHz
10
--1.0
3
7
--0.01
5 7 --10
IT04556
Collector Current, IC -- A
VCE= --10V
°C
5
Gain-Bandwidth Product, FT -- MHz
DC Current Gain, hFE
7
fT -- IC
5
VCE= --2V
25
1000
M
ou
nt
1.0
ed
on
ac
er
0.8
am
ic
bo
ar
0.6
d
(6
00
m
0.4
m2
✕
0.
8m
m
)
0.2
0
3
5
IT04562
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT04563
No.7225-3/6
CPH6122
Embossed Taping Specification
CPH6122-TL-E
No.7225-4/6
CPH6122
Outline Drawing
CPH6122-TL-E
Land Pattern Example
Mass (g) Unit
0.015 mm
* For reference
Unit: mm
2.4
1.4
0.6
0.95
0.95
No.7225-5/6
CPH6122
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PS No.7225-6/6
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