WINNERJOIN MMBTA44 Transistor (npn) Datasheet

RoHS
MMBTA44
D
T
,. L
SOT-23-3L
1. BASE
2. EMITTER
3. COLLECTOR
1. 02
FEATURES
PCM:
0.35
W (Tamb=25℃)
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
O
IC
N
2. 80¡ À0. 05
1. 60¡ À0. 05
unless otherwise specified)
R
T
Symbol
C
1. 9
Collector current
ICM:
0.2
A
Collector-base voltage
V(BR)CBO:
400
V
Operating and storage junction temperature range
Parameter
O
0. 95¡ À0. 025
Power dissipation
2. 92¡ À0. 05
TRANSISTOR (NPN)
0. 35
MMBTA44
Test
conditions
MIN
TYP
MAX
UNIT
Collector-base breakdown voltage
V(BR)CBO
Ic= 100µA, IE=0
400
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= 1mA , IB=0
400
V
V(BR)EBO
IE=100µA, IC=0
5
V
ICBO
VCB=400V, IE=0
0.1
µA
ICEO
VCE=400V
5
µA
IEBO
VEB= 4V, IC=0
0.1
µA
HFE(1)
VCE=10V, IC=10 mA
80
HFE(2)
VCE=10V, IC=1mA
70
HFE(3)
VCE=10V, IC=100 mA
60
VCE(sat)
IC=10 mA, IB=1mA
0.2
V
VCE(sat)
IC=50 mA, IB=5mA
0.3
V
VBE(sat)
IC=10 mA, IB= 1 mA
0.75
V
C
E
L
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
J
E
E
Collector-emitter saturation voltage
W
Base-emitter sataration voltage
Transition
MARKING
300
VCE=20V, IC=10mA
frequency
f
50
T
MHz
f =30MHz
3D
WEJ ELECTRONIC CO.
Http:// www.wej.cn
E-mail:[email protected]
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